Abstract: A work vehicle includes an openable and closable bonnet that covers an engine and is rockable with respect to a body frame, a pin that is provided on the body frame side, and a lock that is provided on the bonnet side and is switchable between a locked state in which the bonnet is locked by the lock engaging with the pin and an unlocked state in which the bonnet is not locked by the lock not engaging with the pin.

Abstract: A tractor includes a hydraulic lifting and lowering driver to lift and lower a three-point linkage, a load detector to swing according to a traction load of an implement, and a mechanical linkage to transmit a swing amount of the load detector to the lifting and lowering driver. The mechanical linkage includes a first linkage on one side in a right-left direction of a vehicle body frame and interlockingly linked with the load detector, a second linkage on the other side in the right-left direction of the vehicle body frame and interlockingly linked with the lifting and lowering driver, and an operation cable interlockingly linking the first linkage and the second linkage.

Abstract: A work vehicle includes an openable and closable bonnet that covers an engine and is rockable with respect to a body frame, a pin that is provided on the body frame side, and a lock that is provided on the bonnet side and is switchable between a locked state in which the bonnet is locked by the lock engaging with the pin and an unlocked state in which the bonnet is not locked by the lock not engaging with the pin.

Abstract: A thin film transistor having a high operation speed with a field effect mobility greater than 20 cm2/Vs and a method for manufacturing the same, and a semiconductor device having the same are provided. A thin film transistor in which a gate electrode, a gate insulating film and an oxide semiconductor film are laminated on a substrate, a source region and a drain region are respectively formed in outer portions of the oxide semiconductor film in the width direction, and a channel region is formed in a region between the source region and the drain region; and a source electrode is connected to the source region, while a drain electrode is connected to the drain region. The gate insulating film contains fluorine; and the ratio of the width W of the channel region to the length L thereof, namely W/L is less than 8.

Abstract: A thin film transistor having a high operation speed with a field effect mobility greater than 20 cm2/Vs and a method for manufacturing the same, and a semiconductor device having the same are provided. A thin film transistor in which a gate electrode, a gate insulating film and an oxide semiconductor film are laminated on a substrate, a source region and a drain region are respectively formed in outer portions of the oxide semiconductor film in the width direction, and a channel region is formed in a region between the source region and the drain region; and a source electrode is connected to the source region, while a drain electrode is connected to the drain region. The gate insulating film contains fluorine; and the ratio of the width W of the channel region to the length L thereof, namely W/L is less than 8.