Patents by Inventor Mamoru Furuta

Mamoru Furuta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5523865
    Abstract: The present invention relates to a thinfilm transistor array designed to drive an active-matrix type liquid-crystal panel to be incorporated in a liquid-crystal display device, and is to offer a thinfilm transistor array solving the conventional problems of disconnections possible between the display electrodes and the drain electrodes and short-circuits possible between the display electrodes and the data wiring. By these, high-quality images can be displayed with a high reliability can be obtained together with an improved fabrication process thereof. In order to accomplish these objectives of the invention, the display electrodes of said thinfilm transistor array are disposed between the gate insulation layer and the inter-insulation layer, and the display electrodes are connected to the drain electrodes by means of a data wiring disposed through contact holes provided through the inter-insulation layer.
    Type: Grant
    Filed: October 6, 1994
    Date of Patent: June 4, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mamoru Furuta, Tetsuya Kawamura, Shigeki Maegawa, Yutaka Miyata
  • Patent number: 5499913
    Abstract: A device for producing honeycomb structural bodies, including an a extruding die, and a porous plate provided on a side of an inlet of the extruding die for the molding material, The passage resistance of the molding material through the porous plate is varied in a direction orthogonal to an extruding direction of the molding material.
    Type: Grant
    Filed: October 27, 1993
    Date of Patent: March 19, 1996
    Assignee: NGK Insulators, Ltd.
    Inventors: Tomiaki Hagino, Mamoru Furuta, Kaname Fukao
  • Patent number: 5397718
    Abstract: In a method of manufacturing a thin film transistor, when impurity ions are introduced in a channel region between source and drain regions in a semiconductor layer, an insulator layer is first formed on the semiconductor layer. Then, impurity ions generated on high frequency discharge are introduced through the insulator layer into the semiconductor layer under a specified acceleration voltage. Then, the introduction depth of impurities and the amount of the impurities to be introduced in the channel region can be controlled or the threshold voltage of the thin film transistor can be controlled. This method can be applied to a large substrate.
    Type: Grant
    Filed: February 19, 1993
    Date of Patent: March 14, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mamoru Furuta, Tetsuya Kawamura, Tatsuo Yoshioka, Hiroshi Sano, Yutaka Miyata
  • Patent number: 5365034
    Abstract: A laser beam is irradiated and scanned on a substrate of a liquid crystal display device of an active matrix type. Pairs of electrons and holes caused by the known internal photoelectric effect are produced by irradiation of the laser beam to electrical conductive thin films including silicon layered on the substrate, and pass through a defective part of short circuit in an intersection of the plural electrical conductive thin films, and thereby a current flowing through the intersection increases and a position of the defect determined on the basis of the scanning position of the laser beam and the increase of the current.
    Type: Grant
    Filed: September 24, 1993
    Date of Patent: November 15, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tetsuya Kawamura, Hiroshi Sano, Mamoru Furuta, Tatsuo Yoshioka, Yutaka Miyata
  • Patent number: 5351145
    Abstract: An active matrix substrate includes a transparent substrate, pairs each having an n-type thin-film transistor and a p-type thin-film transistor formed on the transparent substrate, gate bus lines and source bus lines connected to the n-type and p-type transistors for controlling the n-type and p-type transistors, and pixel-corresponding electrodes controlled by the transistor pairs respectively. Drains of an n-type transistor and a p-type transistor in each of the pairs are connected to each other via a related pixel corresponding electrode. First pulses are applied to gates of the n-type transistors. Second pulses are applied to gates of the p-type transistors. There is provided a difference in phase between the first pulses and the second pulses.
    Type: Grant
    Filed: January 9, 1992
    Date of Patent: September 27, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yutaka Miyata, Mamoru Furuta, Tatsuo Yoshioka, Hiroshi Tsutsu, Tetsuya Kawamura
  • Patent number: 4579707
    Abstract: A thin-walled ceramic tube having a high light transmission and high dimens precision, which has been can be used as an envelope for a high pressure lamp, is produced by an extruding process in which a stiff plastic body for extruding is prepared, said body is extruded and the extruded tube is fired, said process being characterized in that the stiff plastic body consists essentially of ceramic raw material, a thermosetting organic substance and water and the extruded tube is hardened by heating immediately after extruded and pressured air is flawed into an inside portion of the extruded tube.
    Type: Grant
    Filed: June 27, 1983
    Date of Patent: April 1, 1986
    Assignee: NGK Insulators, Ltd.
    Inventors: Kazuo Kobayashi, Mamoru Furuta, Yoshio Maeno
  • Patent number: 4503356
    Abstract: The disclosed ceramic arc tube of metal vapor discharge lamps has an arc discharge portion with electrode-holding end portions integrally formed at opposite ends thereof. The outside diameter of the arc discharge portion is larger than that of the electrode-holding end portions. The ceramic arc tube is made by placing a tubular green body in a fusiform cavity of a die, inflating the middle portion of the green body more than end portions thereof, and firing the thus shaped green body.
    Type: Grant
    Filed: October 25, 1982
    Date of Patent: March 5, 1985
    Assignee: NGK Insulators, Ltd.
    Inventors: Kazuo Kobayashi, Mamoru Furuta, Yoshio Maeno
  • Patent number: 4451418
    Abstract: A ceramic green arc tube for a metal vapor discharge lamp wherein an outer diameter of the arc discharging portion is larger than that of the end portions holding the discharging electrodes is produced by preparing a stiff plastic body consisting mainly of a ceramic material or which main component is alumina, and a binder of which main component is thermal geltinizing organic substance; forming the prepared body into a straight tubular body by means of an extruder; placing the tubular body into an inner cavity of molding die having the above described ceramic arc tube shape wherein the molding die has been previously heated; closing one end portion of the tubular body; applying a compressed fluid from another opened end portion of the tubular body into the inside of said tubular body to inflate the central portion of tubular body until contacting to the inner cavity surface of the molding die,; hardening and drying the inflated body with the heat of previously heated molding die; and ejecting the dried body
    Type: Grant
    Filed: July 30, 1982
    Date of Patent: May 29, 1984
    Assignee: NGK Insulators, Ltd.
    Inventors: Mamoru Furuta, Yoshio Maeno, Kazuo Kobayashi
  • Patent number: 4387067
    Abstract: The disclosed ceramic arc tube of metal vapor discharge lamps has an arc discharge portion with electrode-holding end portions integrally formed at opposite ends thereof. The outside diameter of the arc discharge portion is larger than that of the electrode-holding end portions. The ceramic arc tube is made by placing a tubular green body in a fusiform cavity of a die, inflating the middle portion of the green body more than end portions thereof, and firing the thus shaped green body.
    Type: Grant
    Filed: January 29, 1981
    Date of Patent: June 7, 1983
    Assignee: NGK Insulators, Ltd.
    Inventors: Kazuo Kobayashi, Mamoru Furuta, Yoshio Maeno