Patents by Inventor Manabu Hoshino

Manabu Hoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210375771
    Abstract: An electronic device includes a bus bar that includes a first terminal and a second terminal and extends between the first terminal and the second terminal on a side of a first surface of a substrate; first solder configured to pass through the substrate in a thickness direction and connect a first through terminal connected to a first electronic component that is disposed on a second surface side of the substrate and the first terminal; and second solder configured to pass through the substrate in the thickness direction and connect a second through terminal connected to a second electronic component disposed on the second surface side of the substrate and the second terminal.
    Type: Application
    Filed: February 17, 2021
    Publication date: December 2, 2021
    Applicant: FUJITSU LIMITED
    Inventors: KENJI FUKUZONO, MANABU WATANABE, Yuki Hoshino, Hiroshi Onuki
  • Publication number: 20210214481
    Abstract: Provided is a copolymer that can be favorably used as a main chain scission-type positive resist that has excellent heat resistance and that can form a resist pattern having excellent resolution and clarity. The copolymer includes a monomer unit (A) represented by the following formula (I) and a monomer unit (B) represented by the following formula (II), and has a molecular weight distribution of 1.7 or less. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R1 is an alkyl group, R2 is an alkyl group, a halogen atom, or a haloalkyl group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R2 is present, each R2 may be the same or different.
    Type: Application
    Filed: September 18, 2019
    Publication date: July 15, 2021
    Applicant: ZEON CORPORATION
    Inventor: Manabu HOSHINO
  • Publication number: 20210189535
    Abstract: This nickel-containing steel for low temperature includes, as a chemical composition, by mass %: C: 0.020% to 0.070%; Si: 0.03% to 0.30%; Mn: 0.20% to 0.80%; Ni: 12.5% to 17.4%; Al: 0.010% to 0.060%; N: 0.0015% to 0.0060%; and O: 0.0007% to 0.0030%, in which a metallographic structure contains 2.0% to 30.0% of an austenite phase by volume fraction %, in a thickness middle portion of a section parallel to a rolling direction and a thickness direction, an average grain size of prior austenite grains is 3.0 ?m to 20.0 ?m, and an average aspect ratio of the prior austenite grains is 1.0 to 2.9.
    Type: Application
    Filed: October 26, 2017
    Publication date: June 24, 2021
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Manabu HOSHINO, Tetsuya NAMEGAWA, Shinichi OMIYA, Takayuki KAGAYA
  • Publication number: 20210072643
    Abstract: A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), R1 is an organic group including 3 to 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, R3 is a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.
    Type: Application
    Filed: January 21, 2019
    Publication date: March 11, 2021
    Applicant: ZEON CORPORATION
    Inventor: Manabu HOSHINO
  • Publication number: 20210055654
    Abstract: Provided are a resist composition that can improve coatability (coating film formability) with respect to a substrate in spin coating and close adherence of a resist film and that can form a good pattern, and a resist film in which a good pattern is formed. The resist composition contains a polymer, a solvent, and an aromatic vinyl monomer, and has a content of the aromatic vinyl monomer relative to the polymer of not less than 10 mass ppm and not more than 30,000 mass ppm.
    Type: Application
    Filed: January 17, 2019
    Publication date: February 25, 2021
    Applicant: ZEON CORPORATION
    Inventor: Manabu HOSHINO
  • Publication number: 20210026244
    Abstract: Provided is a positive resist composition for EUV lithography that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, R1 indicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 indicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.
    Type: Application
    Filed: April 17, 2019
    Publication date: January 28, 2021
    Applicant: ZEON CORPORATION
    Inventor: Manabu HOSHINO
  • Publication number: 20200332384
    Abstract: This nickel-containing steel for low temperature includes, as a chemical composition, by mass %: C: 0.030% to 0.070%; Si: 0.03% to 0.30%; Mn: 0.10% to 0.80%; Ni: 12.5% to 17.4%; Mo: 0.03% to 0.60%; Al: 0.010% to 0.060%; N: 0.0015% to 0.0060%; and O: 0.0007% to 0.0030%, in which a metallographic structure contains 2.0% to 30.0% of an austenite phase by volume fraction %, in a thickness middle portion of a section parallel to a rolling direction and a thickness direction, an average grain size of prior austenite grains is 3.0 ?m to 20.0 ?m, and an average aspect ratio of the prior austenite grains is 3.1 to 10.0.
    Type: Application
    Filed: October 26, 2017
    Publication date: October 22, 2020
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Tetsuya NAMEGAWA, Manabu HOSHINO, Shinichi OMIYA, Takayuki KAGAYA
  • Patent number: 10809618
    Abstract: The objective is to favorably form a clear resist pattern using a resist composition containing a polymer that can inhibit resist pattern collapse when used as a main chain scission-type positive resist. A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a polymer including a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, with a proviso that at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom; an exposure step; and a development step. The development is carried out using a developer having a surface tension of 17 mN/m or less.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: October 20, 2020
    Assignee: ZEON CORPORATION
    Inventor: Manabu Hoshino
  • Publication number: 20200308678
    Abstract: A nickel-containing steel for low temperature according to an aspect of the present invention has a chemical composition within a predetermined range, in which a metallographic structure of a thickness middle portion contains 2.0 vol % to 20.0 vol % of an austenite phase, an average grain size of prior austenite grains is 3.0 ?m to 15.0 ?m, an average aspect ratio of the prior austenite grains is 1.0 to 2.4, a plate thickness is 4.5 mm to 30 mm, the chemical composition and the average grain size of the prior austenite grains are further limited depending on the plate thickness, a yield stress at room temperature is 460 MPa to 710 MPa, and a tensile strength at the room temperature is 560 MPa to 810 MPa.
    Type: Application
    Filed: October 26, 2017
    Publication date: October 1, 2020
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Tetsuya NAMEGAWA, Manabu HOSHINO, Shinichi OMIYA, Takayuki KAGAYA
  • Publication number: 20200291506
    Abstract: A Ni steel for low temperature according to an aspect of the present invention has a chemical composition within a predetermined range, in which a metallographic structure of a thickness middle portion contains 2.0 vol % to 20.0 vol % of an austenite phase, an average grain size of prior austenite grains is 3.0 ?m to 12.0 ?m, an average aspect ratio of the prior austenite grains is 2.6 to 10.0, a plate thickness is 4.5 mm to 20 mm, a yield stress at room temperature is 590 MPa to 710 MPa, and a tensile strength at the room temperature is 690 MPa to 810 MPa, when the plate thickness is more than 16 mm, the Ni steel contains Ni: 11.5% or more, and when the plate thickness is 16 mm or less and the Ni steel contains Ni: less than 11.5%, the average grain size of the prior austenite grains is 6.0 ?m or less.
    Type: Application
    Filed: October 26, 2017
    Publication date: September 17, 2020
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Tetsuya NAMEGAWA, Manabu HOSHINO, Shinichi OMIYA, Takayuki KAGAYA
  • Publication number: 20200257198
    Abstract: Provided is a positive resist composition capable of improving the adhesion between a resist film formed through pre-baking and a workpiece and reducing changes in the molecular weight of the polymer in the resist film before and after pre-baking step over broader ranges of heating temperature and heating time (at lower heating temperatures) during pre-baking.
    Type: Application
    Filed: August 23, 2018
    Publication date: August 13, 2020
    Applicant: ZEON CORPORATION
    Inventor: Manabu HOSHINO
  • Publication number: 20200073240
    Abstract: Provided is a polymer that when used as a main chain scission-type positive resist, can sufficiently inhibit resist pattern collapse, can favorably form a clear resist pattern, and can also improve sensitivity. The polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below. [In formula (I), R1 is an organic group including not fewer than 5 and not more than 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of not less than 0 and not more than 5, and p+q=5.
    Type: Application
    Filed: December 15, 2017
    Publication date: March 5, 2020
    Applicant: ZEON CORPORATION
    Inventor: Manabu HOSHINO
  • Patent number: 10550052
    Abstract: Provided are an industrially advantageous method for separating and purifying isobutylene, the method enabling high-purity isobutylene to be efficiently obtained by a simple process, and a method for producing isobutylene. A method for separating and purifying isobutylene from a reaction gas containing the isobutylene and unreacted isobutanol, comprising: a step (1) of contacting the reaction gas containing the isobutylene and unreacted isobutanol with a first solvent to obtain a first gas containing the isobutylene and a recovered solution containing the unreacted isobutanol; a step (2) of contacting the first gas with a specific second solvent to allow the second solvent to absorb the isobutylene contained in the first gas to obtain an absorption solution containing the isobutylene; and a step (3) of distilling the absorption solution to obtain separated and purified isobutylene. A method for producing isobutylene using the separation and purification method.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: February 4, 2020
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Shimpei Kato, Daisuke Tomikawa, Manabu Hoshino
  • Patent number: 10500817
    Abstract: A steel for electron-beam welding according to the present invention includes at least C: 0.02% to 0.10%, Si: 0.03% to 0.30%, Mn: 1.5% to 2.5%, Ti: 0.005% to 0.015%, N: 0.0020% to 0.0060%, and O: 0.0010% to 0.0035%, further includes S: limited to 0.010% or less, P: limited to 0.015% or less, and Al: limited to 0.004% or less, with a balance including iron and inevitable impurities. An index value CeEBB obtained by substituting composition of the steel into following Formula 1 falls in the range of 0.42 to 0.65%, the number of oxide having an equivalent circle diameter of 1.0 ?m or more is 20 pieces/mm2 or less at a thickness center portion in cross section along the thickness direction of the steel, and the number of oxide containing Ti of 10% or more and having an equivalent circle diameter of not less than 0.05 ?m or more and less than 0.5 ?m falls in the range of 1×103 to 1×105 pieces/mm2 at the thickness center portion.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: December 10, 2019
    Assignee: NIPPON STEEL CORPORATION
    Inventors: Ryuichi Honma, Ryuji Uemori, Tadashi Ishikawa, Akihiko Kojima, Manabu Hoshino
  • Patent number: 10386720
    Abstract: Provided are a polymer that can be favorably used as a positive resist having a high ? value and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. The positive resist composition contains the aforementioned polymer and a solvent.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: August 20, 2019
    Assignee: ZEON CORPORATION
    Inventor: Manabu Hoshino
  • Publication number: 20190177250
    Abstract: Provided are an industrially advantageous method for separating and purifying isobutylene, the method enabling high-purity isobutylene to be efficiently obtained by a simple process, and a method for producing isobutylene. A method for separating and purifying isobutylene from a reaction gas containing the isobutylene and unreacted isobutanol, comprising: a step (1) of contacting the reaction gas containing the isobutylene and unreacted isobutanol with a first solvent to obtain a first gas containing the isobutylene and a recovered solution containing the unreacted isobutanol; a step (2) of contacting the first gas with a specific second solvent to allow the second solvent to absorb the isobutylene contained in the first gas to obtain an absorption solution containing the isobutylene; and a step (3) of distilling the absorption solution to obtain separated and purified isobutylene. A method for producing isobutylene using the separation and purification method.
    Type: Application
    Filed: February 13, 2019
    Publication date: June 13, 2019
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Shimpei KATO, Daisuke TOMIKAWA, Manabu HOSHINO
  • Patent number: 10248021
    Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate in a state of low irradiation with ionizing radiation or the like and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and the proportion of components having a molecular weight of less than 6,000 in the polymer is no greater than 0.5%. The positive resist composition contains the aforementioned polymer and a solvent.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: April 2, 2019
    Assignee: ZEON CORPORATION
    Inventor: Manabu Hoshino
  • Patent number: 10241405
    Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate under low irradiation, a high ? value, and high sensitivity, and a positive resist composition that can efficiently form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. In the polymer, the proportion of components having a molecular weight of less than 6,000 is no greater than 0.5% and the proportion of components having a molecular weight of greater than 80,000 is no greater than 6.0%. The positive resist composition contains the aforementioned polymer and a solvent.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: March 26, 2019
    Assignee: ZEON CORPORATION
    Inventor: Manabu Hoshino
  • Publication number: 20190056664
    Abstract: A polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, wherein at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom. In the formulae, R1 is a chlorine atom, a fluorine atom, or a fluorine atom-substituted alkyl group, R2 is an unsubstituted alkyl group or a fluorine atom-substituted alkyl group, R3 to R6, R8, and R9 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R7 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of at least 0 and not more than 5, and p+q=5.
    Type: Application
    Filed: January 20, 2017
    Publication date: February 21, 2019
    Applicant: ZEON CORPORATION
    Inventor: Manabu HOSHINO
  • Publication number: 20190004425
    Abstract: The objective is to favorably form a clear resist pattern using a resist composition containing a polymer that can inhibit resist pattern collapse when used as a main chain scission-type positive resist. A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a polymer including a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, with a proviso that at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom; an exposure step; and a development step. The development is carried out using a developer having a surface tension of 17 mN/m or less.
    Type: Application
    Filed: January 20, 2017
    Publication date: January 3, 2019
    Applicant: ZEON CORPORATION
    Inventor: Manabu HOSHINO