Patents by Inventor Manabu Ikemoto
Manabu Ikemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210362127Abstract: A structure in which a plurality of particles each containing a hydrogen absorption metal element are arranged in a fixed member such that the plurality of particles are apart from each other. An entire surface of each of the plurality of particles is surrounded by the fixed member. The fixed member contains at least one of an oxide and a nitride.Type: ApplicationFiled: August 4, 2021Publication date: November 25, 2021Applicants: CANON ANELVA CORPORATION, CANON KABUSHIKI KAISHAInventors: Manabu IKEMOTO, Hiroyuki TOKUNAGA
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Patent number: 11103852Abstract: A structure in which a plurality of particles each containing a hydrogen absorption metal element are arranged in a fixed member such that the plurality of particles are apart from each other. An entire surface of each of the plurality of particles is surrounded by the fixed member. The fixed member contains at least one of an oxide and a nitride.Type: GrantFiled: September 3, 2019Date of Patent: August 31, 2021Assignees: CANON ANELVA CORPORATION, CANON KABUSHIKI KAISHAInventors: Manabu Ikemoto, Hiroyuki Tokunaga
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Publication number: 20200001271Abstract: A structure in which a plurality of particles each containing a hydrogen absorption metal element are arranged in a fixed member such that the plurality of particles are apart from each other. An entire surface of each of the plurality of particles is surrounded by the fixed member.Type: ApplicationFiled: September 3, 2019Publication date: January 2, 2020Applicants: Canon Anelva Corporation, CANON KABUSHIKI KAISHAInventors: Manabu IKEMOTO, Hiroyuki TOKUNAGA
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Patent number: 10083830Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.Type: GrantFiled: May 23, 2016Date of Patent: September 25, 2018Assignee: CANON ANELVA CORPORATIONInventors: Takuya Seino, Manabu Ikemoto, Kimiko Mashimo
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Publication number: 20160343565Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.Type: ApplicationFiled: May 23, 2016Publication date: November 24, 2016Inventors: Takuya SEINO, Manabu IKEMOTO, Kimiko MASHIMO
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Patent number: 8119018Abstract: A magnetoresistive effect element manufacturing method includes a first step of preparing a magnetoresistive effect element including a magnetic film and a substrate, a second step of etching a predetermined region of the magnetic film by a reactive ion etching method, and a third step of exposing the magnetic film having undergone the second step to a plasma at an ion current density of 4×10?7 A/cm2 or less.Type: GrantFiled: September 12, 2007Date of Patent: February 21, 2012Assignee: Canon Anelva CorporationInventors: Manabu Ikemoto, Tomoaki Osada, Naoaki Yokokawa
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Patent number: 7981216Abstract: A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.Type: GrantFiled: March 16, 2005Date of Patent: July 19, 2011Assignees: Canon Anelva Corporation, NEC CorporationInventors: Keiji Ishibashi, Masahiko Tanaka, Akira Kumagai, Manabu Ikemoto, Katsuhisa Yuda
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Publication number: 20100326818Abstract: The invention provides a method of manufacturing a semiconductor device and a sputtering apparatus which improve the composition of a film formed by a metal and a reactive gas without increasing the number of steps. An embodiment includes the steps of: placing a substrate on a substrate holder in a process chamber; and sputtering a target in the process chamber by applying electric power thereto while feeding a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the process chamber, to form a film containing a target material on the substrate. The step of forming a film is conducted by feeding at least the first reactive gas from a first gas feed opening formed near the target, and by feeding the second reactive gas from a second gas feed opening formed at a position with the distance from the target larger than that of the first gas feed opening.Type: ApplicationFiled: July 23, 2010Publication date: December 30, 2010Applicant: CANON ANELVA CORPORATIONInventors: Manabu Ikemoto, Nobuo Yamaguchi, Kimiko Mashimo, Kazuaki Matsuo
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Publication number: 20100255667Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.Type: ApplicationFiled: April 23, 2010Publication date: October 7, 2010Applicant: CANON ANELVA CORPORATIONInventors: Takuya SEINO, Manabu IKEMOTO, Kimiko MASHIMO
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Patent number: 7807585Abstract: A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.Type: GrantFiled: November 2, 2009Date of Patent: October 5, 2010Assignee: Canon Anelva CorporationInventors: Takuya Seino, Manabu Ikemoto, Hiroki Date
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Publication number: 20100221895Abstract: HF-originated radicals generated in a plasma-forming chamber are fed to a treatment chamber via feed holes, while HF gas molecules as the treatment gas are supplied to the treatment chamber from near the radical feed holes to suppress the excitation energy, thereby increasing the selectivity to Si to remove a native oxide film. Even with the dry-treatment, the surface treatment provides good surface flatness equivalent to that obtained by the wet-cleaning which requires high-temperature treatment, and further attains growth of Si single crystal film on the substrate after the surface treatment. The surface of formed Si single crystal film has small quantity of impurities of oxygen, carbon, and the like. After sputtering Hf and the like onto the surface of the grown Si single crystal film, oxidation and nitrification are applied thereto to form a dielectric insulation film such as HfO thereon, thus forming a metal electrode film.Type: ApplicationFiled: April 21, 2010Publication date: September 2, 2010Applicant: CANON ANELVA CORPORATIONInventors: Takuya Seino, Manabu Ikemoto, Kimiko Mashimo
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Patent number: 7771701Abstract: In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation source formed therein of a member surrounding the hydrogen atom generation source is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.Type: GrantFiled: July 15, 2005Date of Patent: August 10, 2010Assignee: Canon Anelva CorporationInventors: Hironobu Umemoto, Atsushi Masuda, Koji Yoneyama, Keiji Ishibashi, Manabu Ikemoto
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Publication number: 20100075508Abstract: A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering HE or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.Type: ApplicationFiled: November 2, 2009Publication date: March 25, 2010Applicant: CANON ANELVA CORPORATIONInventors: Takuya Seino, Manabu Ikemoto, Hiroki Date
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Publication number: 20090314740Abstract: A magnetoresistive effect element manufacturing method includes a first step of preparing a magnetoresistive effect element including a magnetic film and a substrate, a second step of etching a predetermined region of the magnetic film by a reactive ion etching method, and a third step of exposing the magnetic film having undergone the second step to a plasma at an ion current density of 4×10?7 A/cm2 or less.Type: ApplicationFiled: September 12, 2007Publication date: December 24, 2009Applicant: CANON ANELVA CORPORATIONInventors: Manabu Ikemoto, Tomoaki Osada, Naoaki Yokokawa
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Publication number: 20090298288Abstract: Radical in a plasma generation chamber is supplied to a process chamber through an introducing aperture, and HF gas is supplied as a process gas from the vicinity of the radical introducing aperture. A native oxide film of the substrate surface of a IV group semiconductor doped an impurity is removed, with a good surface roughness equal to the wet cleaning. The substrate after the surface treatment is deposited with a metal material and metal silicide formation by thermal treatment is performed, and during these processes, the substrate is not exposed to the atmosphere, and a good contact resistance equal to or better than the wet process is obtained.Type: ApplicationFiled: April 21, 2009Publication date: December 3, 2009Applicant: CANON ANELVA CORPORATIONInventors: Takuya Seino, Manabu Ikemoto, Kimiko Mashimo
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Publication number: 20090004100Abstract: In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation means formed therein of a member surrounding the hydrogen atom generation means is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation means in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.Type: ApplicationFiled: July 15, 2005Publication date: January 1, 2009Applicant: Canon Anelva CorporationInventors: Hironobu Umemoto, Atsushi Masuda, Koji Yoneyama, Keiji Ishibashi, Manabu Ikemoto
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Publication number: 20080017500Abstract: A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them over the entire area of their interfacial surfaces, or a large portion thereof.Type: ApplicationFiled: August 7, 2007Publication date: January 24, 2008Applicant: CANON ANELVA CORPORATIONInventors: Masahiko Tanaka, Manabu Ikemoto, Naoaki Yokogawa
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Patent number: 7267724Abstract: A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them over the entire area of their interfacial surfaces, or a large portion thereof.Type: GrantFiled: May 23, 2001Date of Patent: September 11, 2007Assignee: Anelva CorporationInventors: Masahiko Tanaka, Manabu Ikemoto, Naoaki Yokogawa
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Publication number: 20070078821Abstract: A data server and a user terminal are connected through a communication network. A retrieval interface of the user terminal creates a retrieval request including specification of a file format style at the time of output, and transmits the created retrieval request to the data server. A data retrieval unit of the data server performs retrieval in a plant database and a point number information database based on the retrieval request, converts obtained retrieval result data into a file format style specified by the retrieval request, stores the converted data in a retrieval result database, and returns a response notification to the user terminal which has issued the request.Type: ApplicationFiled: September 30, 2005Publication date: April 5, 2007Inventors: Takashi Kubo, Tsuneo Watanabe, Manabu Kataoka, Katsunori Kodama, Manabu Ikemoto, Masaru Hirakawa
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Publication number: 20050217576Abstract: A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.Type: ApplicationFiled: March 16, 2005Publication date: October 6, 2005Applicants: ANELVA CORPORATION, NEC CORPORATIONInventors: Keiji Ishibashi, Masahiko Tanaka, Akira Kumagai, Manabu Ikemoto, Katsuhisa Yuda