Patents by Inventor Mandyam Sriram

Mandyam Sriram has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240218502
    Abstract: Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-? dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and an organosilane reducing agent at a temperature of less than or equal to 450° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexafluoride (MoF6), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The organosilane reducing agent comprises trimethylsilyl compounds, such as 1,4-bis(trimethylsilyl)-2-methyl-2,5-cyclohexadiene.
    Type: Application
    Filed: January 4, 2023
    Publication date: July 4, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Tuerxun Ailihumaer, Srinivas Gandikota, Yixiong Yang, Yogesh Sharma, Ashutosh Agarwal, Mandyam Sriram
  • Publication number: 20240204061
    Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide methods to reduce the resistance of the work function layer of an electronic device, as well as using a low resistivity metal for filling the gate.
    Type: Application
    Filed: December 19, 2022
    Publication date: June 20, 2024
    Inventors: Srinivas Gandikota, Yixiong Yang, Yongjing Lin, Tuerxun Ailihumaer, Tengzhou Ma, Yuanhua Zheng, Zhihui Liu, Shih Chung Chen, Janardhan Devrajan, Yi Xu, Yu Lei, Mandyam Sriram
  • Publication number: 20240170254
    Abstract: Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power source. Some embodiments are directed to processing chambers having a wafer cassette comprising a plurality of platforms, each platform configured to support at least one wafer for processing, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette. In some embodiments, the plurality of platforms have a first set of electrodes having a first polarity and a second set of electrodes having a second polarity, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette.
    Type: Application
    Filed: November 21, 2022
    Publication date: May 23, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Jianming Fu, Tza-Jing Gung, Sanjeev Baluja, Haitao Wang, Mandyam Sriram, Srinivas Gandikota, Steven V. Sansoni
  • Publication number: 20240141492
    Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.
    Type: Application
    Filed: March 23, 2023
    Publication date: May 2, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Prasanth Narayanan, Vijayabhaskara Venkatagiriyappa, Keiichi Tanaka, Ning Li, Robert B. Moore, Robert C. Linke, Mandyam Sriram, Mario D. Silvetti, Michael Racine, Tae Kwang Lee
  • Publication number: 20240102157
    Abstract: Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-K dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and a plasma at a temperature of less than or equal to 400° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The plasma comprises one or more of hydrogen (H2), nitrogen (N2), or a silane (SixHy). In some embodiments, when the molybdenum-containing precursor comprises molybdenum hexafluoride (MoF6), the plasma does not include hydrogen (H2).
    Type: Application
    Filed: September 22, 2022
    Publication date: March 28, 2024
    Applicant: Applied Materials, Inc.
    Inventors: TUERXUN AILIHUMAER, Srinivas Gandikota, Yixiong Yang, Yogesh Sharma, Ashutosh Agarwal, Mandyam Sriram
  • Publication number: 20240096688
    Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Michael Robert Rice, Joseph AuBuchon, Sanjeev Baluja, Mandyam Sriram
  • Patent number: 11923172
    Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.
    Type: Grant
    Filed: February 8, 2022
    Date of Patent: March 5, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hari Ponnekanti, Tsutomu Tanaka, Mandyam Sriram, Dmitry A. Dzilno, Sanjeev Baluja, Mario D. Silvetti
  • Patent number: 11894257
    Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: February 6, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Michael Rice, Joseph AuBuchon, Sanjeev Baluja, Mandyam Sriram
  • Patent number: 11887856
    Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: January 30, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kelvin Chan, Yihong Chen, Jared Ahmad Lee, Kevin Griffin, Srinivas Gandikota, Joseph Yudovsky, Mandyam Sriram
  • Publication number: 20230366094
    Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.
    Type: Application
    Filed: July 13, 2023
    Publication date: November 16, 2023
    Inventors: Jason Dirk Haverkamp, Pramod Subramonium, Joseph L. Womack, Dong Niu, Keith Fox, John B. Alexy, Patrick G. Breiling, Jennifer L. Petraglia, Mandyam A. Sriram, George Andrew Antonelli, Bart J. van Schravendijk
  • Publication number: 20230313378
    Abstract: Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.
    Type: Application
    Filed: March 31, 2022
    Publication date: October 5, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Lei Zhou, Muhannad Mustafa, Shih Chung Chen, Zhihui Liu, Chi-Chou Lin, Bin Cao, Janardhan Devrajan, Mario D. Silvetti, Mandyam Sriram
  • Publication number: 20230307216
    Abstract: Processing chambers comprising a chamber body, a remote plasma source (RPS) outside the chamber body, a first connection line between the remote plasma source and the interior volume of the chamber body through the top wall and a second connection line between the remote plasma source and the interior volume through the sidewall of the chamber body. Methods of cleaning a processing chamber comprising flowing an etchant gas through the RPS into the chamber body, followed by a flow recovery gas through the RPS into the chamber body through both the first connection line and second connection line.
    Type: Application
    Filed: October 18, 2022
    Publication date: September 28, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Prasanth Narayanan, Shrihari Sampathkumar, Keiichi Tanaka, Mario D. Sanchez, Muhammad M. Rasheed, Mandyam Sriram
  • Publication number: 20230295803
    Abstract: Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.
    Type: Application
    Filed: April 14, 2023
    Publication date: September 21, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Haoming Yan, Shih Chung Chen, Mandyam Sriram, EunKee Hong, Janardhan Devrajan, Lakmal C. Kalutarage, Yongjing Lin, Lisa Michelle Mandrell, Arkaprava Dan
  • Publication number: 20230245925
    Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.
    Type: Application
    Filed: March 24, 2023
    Publication date: August 3, 2023
    Inventors: Wenyi LIU, Wei TANG, Srinivas GANDIKOTA, Yixiong YANG, Yong WU, Jianqiu GUO, Arkaprava DAN, Mandyam SRIRAM
  • Publication number: 20230146837
    Abstract: Pedestal heater radiators, pedestal assemblies including the pedestal heater radiators and methods of decreasing deposition non-uniformity are described. The pedestal heater radiator has a first radiator body and a second radiator body with different emissivities. The first radiator body and second radiator body are sized and positioned to decrease the heat loss differential between sides of the pedestal.
    Type: Application
    Filed: November 9, 2021
    Publication date: May 11, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Muhannad Mustafa, Mario D. Silvetti, Mandyam Sriram, Sanjeev Baluja
  • Patent number: 11646226
    Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: May 9, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Wenyi Liu, Wei Tang, Srinivas Gandikota, Yixiong Yang, Yong Wu, Jianqiu Guo, Arkaprava Dan, Mandyam Sriram
  • Publication number: 20230113514
    Abstract: Processing methods described herein comprise forming a metal gate film on a narrow feature and a wide feature and depositing a hard mask on the metal gate film. The hard mask forms on the metal gate film at a top, bottom and sidewalls of the wide feature and on a top of the narrow feature to cover the metal gate film. Some processing methods comprise oxidizing the metal gate film on the narrow feature to convert a portion of the metal gate film to a metal oxide film. Some processing methods comprise etching the metal oxide film from the narrow feature to leave a gradient etch profile. Some processing methods comprise filling the narrow feature and the wide feature with a gap fill material comprising one or more of a metal nitride, titanium nitride (TiN) or titanium oxynitride (TiON), the gap fill material substantially free of seams and voids.
    Type: Application
    Filed: December 3, 2021
    Publication date: April 13, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Shih Chung Chen, Yongjing Lin, Chi-Chou Lin, Zhiyong Wang, Chih-Hsun Hsu, Mandyam Sriram, Tza-Jing Gung
  • Publication number: 20230097400
    Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 ? to less than or equal to 50 ?. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-? metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.
    Type: Application
    Filed: December 7, 2022
    Publication date: March 30, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Srinivas Gandikota, Steven C.H. Hung, Mandyam Sriram, Jacqueline S. Wrench, Yixiong Yang, Yong Yang
  • Patent number: 11581213
    Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: February 14, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abhishek Chowdhury, Vijayabhaskara Venkatagiriyappa, Mihaela A. Balseanu, Jyoti Prakash Deo, Srinivas Ramakrishna, Keiichi Tanaka, Mandyam Sriram, Francis Kanyiri Mungai, Mario D. Silvetti, Sriharish Srinivasan
  • Patent number: 11552177
    Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 ? to less than or equal to 50 ?. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-? metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: January 10, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Srinivas Gandikota, Steven C. H. Hung, Mandyam Sriram, Jacqueline S. Wrench, Yixiong Yang, Yong Yang