Abstract: The present invention relates to an illumination system for microlithography, especially for wavelengths ?193 nm, especially preferably for EUV lithography for illuminating a field in a field plane with at least one optical integrator which splits up a light bundle emitted by a light source into a plurality of light channels each having a light intensity, characterized in that a filter is provided in the light path from the light source to the field plane, with the filter comprising filter elements which are configured in such a way that the light intensity of at least one light channel is reduced in the light path after the filter element.

Abstract: The disclosure relates to an EUV (extreme ultraviolet) illumination system. The system can include at least one EUV light source, and an aperture stop and sensor arrangement for the measurement of intensity fluctuations and/or position changes of the EUV light source, in particular in the range of the effectively utilized wavelengths, or of one of the intermediate images of the EUV light source. The aperture stop and sensor arrangement can include an aperture stop and an EUV position sensor. The aperture stop and sensor arrangement can be arranged in such a way that the aperture stop allows a certain solid angle range of the radiation originating from the EUV light source or from one of its intermediate images to fall on the EUV position sensor.

Abstract: The invention relates to a filter device for an illumination system, especially for the correction of the illumination of the illuminating pupil, including a light source, with the illumination system being passed through by a bundle of illuminating rays from the light source to an object plane, with the bundle of illuminating rays impinging upon the filter device, including at least one filter element which can be introduced into the beam path of the bundle of illuminating rays, with the filter element including an actuating device, so that the filter element can be brought with the help of the actuating device into the bundle of illuminating rays.

Abstract: An illumination system for illuminating a reticle that moves along a scanning direction in a microlithographic projection exposure apparatus has an optical axis and an optical component producing an illumination angle distribution of the projection light. In accordance with the illumination angle distribution, a plurality of poles is illuminated in a pupil plane of the illumination system. The poles form an arrangement that is only mirror-symmetrical with respect to an axis that is orthogonal to the optical axis of the illumination, but neither parallel nor perpendicular to the scanning direction.

Abstract: A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(?) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points.

Abstract: A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(?) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points.

Abstract: The invention relates to a filter device for an illumination system, especially for the correction of the illumination of the illuminating pupil, including a light source, with the illumination system being passed through by a bundle of illuminating rays from the light source to an object plane, with the bundle of illuminating rays impinging upon the filter device, including at least one filter element which can be introduced into the beam path of the bundle of illuminating rays, with the filter element including an actuating device, so that the filter element can be brought with the help of the actuating device into the bundle of illuminating rays.

Abstract: An illumination system for a microlithography projection exposure installation is used to illuminate an illumination field with the light from a primary light source (11). The illumination system has a light distribution device (25) which receives light from the primary light source and, from this light, produces a two-dimensional intensity distribution which can be set variably in a pupil-shaping surface (31) of the illumination system. The light distribution device has at least one optical modulation device (20) having a two-dimensional array of individual elements (21) that can be controlled individually in order to change the angular distribution of the light incident on the optical modulation device. The device permits the variable setting of extremely different illuminating modes without replacing optical components.

Abstract: An illumination system for a microlithography projection exposure installation is used to illuminate an illumination field with the light from a primary light source (11). The illumination system has a light distribution device (25) which receives light from the primary light source and, from this light, produces a two-dimensional intensity distribution which can be set variably in a pupil-shaping surface (31) of the illumination system. The light distribution device has at least one optical modulation device (20) having a two-dimensional array of individual elements (21) that can be controlled individually in order to change the angular distribution of the light incident on the optical modulation device. The device permits the variable setting of extremely different illuminating modes without replacing optical components.

Abstract: The disclosure relates to a correction light device for the irradiation of optical elements of an optical arrangement, in particular a lens, such a microlithography lens having a correction light, which include at least one correction light source and at least one mirror arrangement that deflects the light from the correction light source in the beam path to the optical element such that at least part of at least one surface of at least one optical element of the optical arrangement are irradiated in a locally and/or temporally variable fashion. The correction light strikes the surface of the optical element at a flat angle such that the obtuse angle between the optical axis of the optical arrangement at the location of the optical element and the correction light beam is less than or equal to 105°.

Abstract: An illumination system of a microlithographic projection exposure apparatus has a pupil surface and an essentially flat arrangement of desirably individually drivable beam deviating elements for variable illumination of the pupil surface. Each beam deviating element allows deviation of a projection light beam incident on it to be achieved as a function of a control signal applied to the beam deviating element. A measurement illumination instrument directs a measurement light beam, independent of the projection light beams, onto a beam deviating element. A detector instrument records the measurement light beam after deviation by the beam deviating element. An evaluation unit determines the deviation of the projection light beam from measurement signals provided by the detector instrument.

Abstract: The disclosure relates to an illumination system of a microlithographic projection exposure apparatus. The illumination system can include a depolariser which in conjunction with a light mixing system disposed downstream in the light propagation direction at least partially causes effective depolarisation of polarised light impinging on the depolariser. The illumination system can also include a microlens array which is arranged upstream of the light mixing system in the light propagation direction. The microlens array can include a plurality of microlenses arranged with a periodicity. The depolariser can be configured so that a contribution afforded by interaction of the depolariser with the periodicity of the microlens array to a residual polarisation distribution occurring in a pupil plane arranged downstream of the microlens array in the light propagation direction has a maximum degree of polarisation of not more than 5%.

Abstract: An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.

Abstract: A microlithographic projection exposure apparatus (1) comprises an illumination system (4) with an illumination optics (5) for illuminating an illumination field in a reticle plane (6). The illumination optics (5) further includes a light distribution device (12a) which comprises a light deflection array (12) of separate elements and an optical assembly (21, 23 to 26) which converts the light intensity distribution defined by the light distribution device (12a) in a first plane (19) of the illumination optics (5) into an illumination angle distribution in the reticle plane (6). Downstream of an output coupling device (17), which is arranged in the light path between the light deflection array (12) and the reticle plane (6), a space and time resolving detection device (30) is exposed to outcoupled illumination light (31) in such a way that the detection device (30) detects a light intensity distribution corresponding to the light intensity distribution in the first plane (19).

Abstract: The invention relates to a system for reducing the coherence of a wave front-emitting laser radiation, especially for a projection lens for use in semiconductor lithography, wherein a first partial beam of a laser beam incident on a surface of a resonator body is partially reflected. A second partial beam penetrates the resonator body and emerges from the resonator body at least approximately in the area of entry after a plurality of total internal reflections. The two partial beams are then Passed on jointly to an illumination plane. The resonator body is adapted, in addition to splitting the laser beam into partial beams, to modulate the wave fronts of at least one partial beam during a laser pulse. The partial beams reflected on the resonator body and penetrating the resonator body are superimposed downstream of the resonator body. The resonator body is provided with a phase plate having different local phase distribution.

Abstract: A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system includes an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method involves setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.

Abstract: A beam reshaping unit for an illumination system of a microlithographic projection exposure apparatus includes a first beam reshaping element having a first beam reshaping surface and a second beam reshaping element having a second beam reshaping surface which faces the first beam reshaping surface. The two beam reshaping surfaces are rotationally symmetrical with respect to an optical axis of the beam reshaping unit. At least the first beam reshaping surface has a concavely or convexly curved region.

Abstract: An optical beam transformation system has a sequence of optical elements arranged along an optical axis of the optical beam transformation system and designed for transforming an entrance light distribution striking an entrance surface of the optical beam transformation system into an exit light distribution emerging from an exit surface of the optical beam transformation system by radial redistribution of light intensity. The optical elements include a transformation element causing a radial redistribution of light intensity and having a transformation surface inclined to the optical axis and causing a polarization-selective reflection of a light distribution incident on the transformation surface according to an efficiency symmetry characteristic for the transformation surface.

Abstract: Illumination systems for microlithographic projection exposure apparatus, as well as related systems, components and methods are disclosed. In some embodiments, an illumination system includes one or more scattering structures and an optical integrator that produces a plurality of secondary light sources.

Abstract: The disclosure relates to an EUV (extreme ultraviolet) illumination system. The system can include at least one EUV light source, and an aperture stop and sensor arrangement for the measurement of intensity fluctuations and/or position changes of the EUV light source, in particular in the range of the effectively utilized wavelengths, or of one of the intermediate images of the EUV light source. The aperture stop and sensor arrangement can include an aperture stop and an EUV position sensor. The aperture stop and sensor arrangement can be arranged in such a way that the aperture stop allows a certain solid angle range of the radiation originating from the EUV light source or from one of its intermediate images to fall on the EUV position sensor.