Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.

Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.

Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.

Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.

Abstract: A heterostructure or multilayer semiconductor structure having lattice matched layers with different bandgaps is grown by MOCVD. More specifically, a wide bandgap material such as AlInSb or GaInSb is grown on a substrate to form a lower-contact layer. An n-type active layer is lattice matched to the lower contact layer. The active layer should be of a narrow bandgap material, such as InAsSb, InTlSb, InBiSb, or InBiAsSb. A p-type upper contact layer is then grown on the active layer and a multi-color infrared photodetector has been fabricated.

Abstract: An Al-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.

Abstract: A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1−xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

Abstract: The subject invention comprises a high power MWIR laser grown as a Double Heterostructure by MOCVD<MBE or a combination of the two growth techniques. The Double Heterostructure is prepared as InAsSb/InAsSbP/AlAsSb/InAs. This structure is etched to form mesas and contacts are applied. The MWIR laser of the subject invention may be used in various optoelectric and electronic devices such as detectors, transistors, and waveguide.

Abstract: A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.

Abstract: A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.

Abstract: A heterostructure or multilayer semiconductor structure having lattice matched layers with different bandgaps is grown by MOCVD. More specifically, a wide bandgap material such as AlInSb or GaInSb is grown on a substrate to form a lower-contact layer. An n-type active layer is lattice matched to the lower contact layer. The active layer should be of a narrow bandgap material, such as InAsSb, InTlSb, InBiSb, or InBiAsSb. A p-type upper contact layer is then grown on the active layer and a multi-color infrared photodetector has been fabricated.

Abstract: A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

Abstract: An Al-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.

Abstract: An A1-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.

Abstract: Diode lasers of the formula GaInP/InGaAs on GaAs substrates with GaAlAs/GaAs waveguides which operate at powers higher than 5.3W with emitting apertures of 100 microns are disclosed. By varying compositions of the active layer and by employing strained layer quantum wells, diode lasers are fabricated over the wavelength range of 700 to 1100 nm.

Abstract: A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

Abstract: A heterostructure or multilayer semiconductor structure having lattice matched layers with different bandgaps is grown by MOCVD. More specifically, a wide bandgap material such as AlInSb or GaInSb is grown on a substrate to form a lower-contact layer. An n-type active layer is lattice matched to the lower contact layer. The active layer should be of a narrow bandgap material, such as InAsSb, InTlSb, InBiSb, or InBiAsSb. A p-type upper contact layer is then grown on the active layer and a multi-color infrared photodetector has been fabricated.

Abstract: Diode lasers of the formula GaInP/InGaAs on GaAs substrates with GaAlAs/GaAs waveguides which operate at powers higher than 5.3W with emitting apertures of 100 microns are disclosed. By varying compositions of the active layer and by employing strained layer quantum wells, diode lasers are fabricated over the wavelength range of 700 to 1100 nm.

Abstract: A multispectral detector is grown epitaxially on a substrate such as InP, GaAs, or Si and comprises sets of multi-quantum well layers. In the method of the subject invention, contact layers are grown on the substrate and on top of the active layers. The active layers comprise one or more sets of multiquantum well layers grown adjacent to each other. The active layers and multiquantum wells and consist of well and barrier layers prepared from various stochiometric ratios of InGaAlAs and InGaAsP, with the barrier layers of InAlAs and InP, or well layers GaInP interspersed with barrier layers of GaxIl−xAsyPl−y(0≦x≦1, 0≦y≦1).

Abstract: The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the longitudinal direction from the seed window, followed by lateral growth of the same material to form an epitaxial film and a structure which provides a defect free surface for further epitaxial layers.