Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: Image sensors may include an array of pixels each having nested sub-pixels. Nested sub-pixels may include an inner photosensitive region and an outer photosensitive region. Inner photosensitive regions of pixels in an array may be provided with a respective local vertical transfer gate structure formed in a trench that laterally surrounds the inner photosensitive region. A trench structure may be formed in a grid-like pattern having gaps in which the nested sub-pixels are formed. The trench structure may be coupled to outer photosensitive regions of each of the pixels in the array. The trench structure may be a global vertical transfer gate structure. The vertical transfer gate structures provided to the pixels may allow for accumulated charges to be transferred to respective charge storage nodes associated with the photosensitive regions in any given pixel. Image sensors formed in this way may be used in rolling shutter or global shutter configurations.

Abstract: An image sensor may contain an array of imaging pixels arranged in rows and columns. Each column of imaging pixels may be coupled to a column line which is used to read out imaging signals from the pixels. The column line may be coupled to an analog-to-digital converter for converting analog imaging signals from the pixels to digital signals. The analog-to-digital converter may be implemented as a charge sharing successive approximation register (SAR) analog-to-digital converter (ADC). The SAR ADC may include a comparator coupled to a feedback digital-to-analog converter (DAC). The comparator may have a non-zero comparator offset. The feedback DAC may include capacitors that are scaled using a sub-radix-2 sizing scheme to help improve tolerance to the comparator offset while enabling resolutions of up to 10-bits or more.

Abstract: Various embodiments of the present technology provide a method and apparatus for signal distribution in an image sensor. In various embodiments, the apparatus provides a balanced signal distribution circuit having a plurality of driver circuits, wherein each driver circuit is connected to a logic circuit, distributed either directly below the pixel array or interspersed within the pixel array. A clock distribution network is connected to the logic circuit to provide all the logic circuits with a clock signal substantially simultaneously, which, in turn, controls all of the driver circuits substantially simultaneously and all pixels in the pixel array receive a control signal substantially simultaneously.

Abstract: An image sensor may contain an array of imaging pixels arranged in rows and columns. Each column of imaging pixels may be coupled to a column line which is used to read out imaging signals from the pixels. The column line may be coupled to an analog-to-digital converter for converting analog imaging signals from the pixels to digital signals. The analog-to-digital converter may be implemented as a charge sharing successive approximation register (SAR) analog-to-digital converter (ADC). The SAR ADC may include a comparator coupled to a feedback digital-to-analog converter (DAC). The comparator may have a non-zero comparator offset. The feedback DAC may include capacitors that are scaled using a sub-radix-2 sizing scheme to help improve tolerance to the comparator offset while enabling resolutions of up to 10-bits or more.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: An imaging system may include an image sensor having an array of dual gain pixels. Each pixel may be operated using a two read method such that all signals are read in a high gain configuration in order to improve the speed or to reduce the power consumption of imaging operations. Each pixel may be operated using a two read, two analog-to-digital conversion method in which two sets of calibration data are stored. A high dynamic range (HDR) image signal may be produced for each pixel based on signals read from the pixel and on light conditions. The HDR image may be produced based on a combination of high and low gain signals and one or both of the two sets of calibration data. A system of equations may be used for generating the HDR image. The system of equations may include functions of light intensity.

Abstract: An imaging system may include an image sensor having an array of dual gain pixels. Each pixel may be operated using a two read method such that all signals are read in a high gain configuration in order to improve the speed or to reduce the power consumption of imaging operations. Each pixel may be operated using a two read, two analog-to-digital conversion method in which two sets of calibration data are stored. A high dynamic range (HDR) image signal may be produced for each pixel based on signals read from the pixel and on light conditions. The HDR image may be produced based on a combination of high and low gain signals and one or both of the two sets of calibration data. A system of equations may be used for generating the HDR image. The system of equations may include functions of light intensity.

Abstract: In accordance with an embodiment, a 4T pixel includes a first switch having a control terminal and first and second current carrying terminals and an amplifier having an input terminal and an output terminal. A second switch is coupled between the first switch and the amplifier.