Abstract: A method of increasing the resistivity of a silicon carbide wafer includes providing a silicon carbide wafer with a first resistivity, and applying a microwave to treat the silicon carbide wafer. The treated silicon carbide wafer has a second resistivity. The second resistivity is higher than the first resistivity. The microwave treated silicon carbide wafer can be applied in a high-frequency device.

Abstract: The present invention relates to the growth of a native oxide layer on a surface of a silicon substrate. Deep ultraviolet (UV) light is irradiated to thereby effectively improve the quality of the native oxide layer. By improving the quality, the difficulty of the surface treatment of a cross-section sample for scanning capacitance microscopy (SCM) is improved. The life cycle and reliability of the sample are also improved with enhanced reproducibility for the measurement of SCM. Thus, the present invention provides an improved method and an apparatus using the same to prepare a cross-sectional sample for SCM. The feasibility and the concrete method for enhancing oxide layer quality on a silicon substrate surface by UV light irradiation under a humidity-controlled environment are established. The optimum parameters of irradiation time for n-type and p-type samples are made.

Abstract: A visible light response photocatalyst structure and a process for manufacturing the same are disclosed, where the structure is manufactured by the GRR for two times, so that the structure has a large surface area, high surface activity, being apt to get integrated with a silicon substrate and endurable to the environment, and further has the rapid and simple manufacturing characteristics without any additional energy required and has a high reproductively.

Abstract: A visible light response photocatalyst structure and a process for manufacturing the same are disclosed, where the structure is manufactured by the GRR for two times, so that the structure has a large surface area, high surface activity, being apt to get integrated with a silicon substrate and endurable to the environment, and further has the rapid and simple manufacturing characteristics without any additional energy required and has a high reproductively.

Abstract: A platinum-platinum silicide modified silicon composite tip apex, and a method for forming the aforesaid tip apex are disclosed, where a metallic precursor solution and a silicon probe are reacted to form a local platinum nano-structure, which could be precisely controlled with local selectivity, and a local platinum silicide layer is formed between the platinum nano-structure and the silicon probe with an atmospheric microwave annealing (a-MWA) process conducted as well, largely enhancing the conductivity of the tip and spatial resolution of the field detection in field sensitive scanning probe microscopy. In addition to exemption from a stray-field effect and thus having better image quality, the platinum silicide-containing probe could more efficiently enhance the interfacial electron transfer efficiency as compared to the probe tip having only a platinum nano-structure, so that the probe could be applicable to a controlled conductive probe having high spatial resolution.

Abstract: The present invention discloses a front-wing cantilever for the conductive probe of electrical scanning probe microscopes, wherein two symmetrical front wings are installed to extend from two lateral sides of the front end of the cantilever so that those two front wings are positioned on two lateral sides of the conductive tip. The front-wing structure of the cantilever can effectively inhibit the optical perturbation in the electrical scanning probe microscopes and obviously promote the analysis accuracy thereof. The front-wing structure can provide the scanned region with an effective dark field lest the optical absorption appears in the scanned region of semiconductor specimen and inhibit the optical perturbation occurs during the measurement and analysis of the differential capacitance.

Abstract: An electrical scanning probe microscope (SPM) apparatus. The SPM apparatus is equipped with an atomic force microscope with an infrared laser source, a position-sensitive photo-detector (PSPD) to provide a topographic image, a charge-coupled device (CCD) monitor for optical alignment, and an electrical scanning sensor operatively coupled to the atomic force microscope to acquire synchronous two-dimensional electrical images. The photoperturbation effects induced by stray light and perturbation of the contrast of SCM images can thus be ameliorated.

Abstract: The present invention discloses a front-wing cantilever for the conductive probe of electrical scanning probe microscopes, wherein two symmetrical front wings are installed to extend from two lateral sides of the front end of the cantilever so that those two front wings are positioned on two lateral sides of the conductive tip. The front-wing structure of the cantilever can effectively inhibit the optical perturbation in the electrical scanning probe microscopes and obviously promote the analysis accuracy thereof. The front-wing structure can provide the scanned region with an effective dark field lest the optical absorption appears in the scanned region of semiconductor specimen and inhibit the optical perturbation occurs during the measurement and analysis of the differential capacitance.

Abstract: An electrical scanning probe microscope (SPM) apparatus. The SPM apparatus is equipped with an atomic force microscope with long-wavelength laser source to acquire topographic images and an electrical scanning sensor operatively coupled to the atomic force microscope to acquire synchronous two-dimensional electrical images. The photoperturbation effects induced by stray light and perturbation of the contrast of SCM images can be ameliorated.

Abstract: An electrical scanning probe microscope (SPM) apparatus. The SPM apparatus is equipped with an atomic force microscope with an infrared laser source, a position-sensitive photo-detector (PSPD) to provide a topographic image, a charge-coupled device (CCD) monitor for optical alignment, and an electrical scanning sensor operatively coupled to the atomic force microscope to acquire synchronous two-dimensional electrical images. The photoperturbation effects induced by stray light and perturbation of the contrast of SCM images can thus be ameliorated.

Abstract: An electrical scanning probe microscope (SPM) apparatus. The SPM apparatus is equipped with an atomic force microscope with long-wavelength laser source to acquire topographic images and an electrical scanning sensor operatively coupled to the atomic force microscope to acquire synchronous two-dimensional electrical images. The photoperturbation effects induced by stray light and perturbation of the contrast of SCM images can be ameliorated.