Abstract: The various implementations described herein include methods, devices, and systems for operating magnetic memory devices. In one aspect, a magnetic memory device includes: (1) a core; (2) a plurality of layers that surround the core in succession; (3) a first input terminal coupled to the core and configured to receive a first current, where: (a) the first current flows radially from the core through the plurality of layers; and (b) the radial flow of the first current imparts a torque on, at least, a magnetization of an inner layer of the plurality of layers; and (4) a second input terminal coupled to the core and configured to receive a second current, where: (i) the second current imparts a Spin Hall Effect (SHE) around a perimeter of the core; and (ii) the SHE contributes to the torque imparted on the magnetization of the inner layer by the first current.

Abstract: A Magnetic Random Access Memory (MRAM) structure having a thermally conductive, dielectric cladding material that contacts an outer side of a magnetic memory element. The magnetic memory element can be a magnetic tunnel junction element formed as a cylindrical pillar that extends between first and second electrically conductive lead layers. The cylinder of the magnetic memory element can have an outer periphery, and the cladding material can be formed to contact the entire periphery. In addition, a heat sink structure formed of a dielectric material having a high specific heat capacity can be formed to contact an outer periphery of the cladding material. The cladding material and heat sink structure efficiently conduct heat away from the sides of the memory element to prevent the temperature of the memory element to rise to unsafe levels. This advantageously assists in maintaining a high reliability and long life of the MRAM system.