Patents by Inventor Marco CRESCENTINI
Marco CRESCENTINI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11619688Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.Type: GrantFiled: September 2, 2021Date of Patent: April 4, 2023Assignee: STMICROELECTRONICS S.R.L.Inventors: Marco Crescentini, Michele Biondi, Marco Tartagni, Aldo Romani, Roberto Antonio Canegallo
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Publication number: 20210396819Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.Type: ApplicationFiled: September 2, 2021Publication date: December 23, 2021Applicant: STMICROELECTRONICS S.R.L.Inventors: Marco CRESCENTINI, Michele BIONDI, Marco TARTAGNI, Aldo ROMANI, Roberto Antonio CANEGALLO
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Patent number: 11119160Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.Type: GrantFiled: July 17, 2019Date of Patent: September 14, 2021Assignee: STMICROELECTRONICS S.R.L.Inventors: Marco Crescentini, Michele Biondi, Marco Tartagni, Aldo Romani, Roberto Canegallo
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Patent number: 10571531Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.Type: GrantFiled: March 12, 2018Date of Patent: February 25, 2020Assignee: STMICROELECTRONICS S.R.L.Inventors: Marco Crescentini, Marco Tartagni, Aldo Romani, Roberto Canegallo, Marco Marchesi, Domenico Cristaudo
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Publication number: 20200025843Abstract: A planar Hall sensing element includes a first pair of sensing electrodes mutually opposed in a first direction across the sensing element and a second pair of sensing electrodes mutually opposed in a second direction across the sensing element, with the second direction orthogonal to the first direction. A first pair of bias electrodes is mutually opposed in a third direction and a second pair mutually opposed in a fourth direction across the sensing element, the fourth direction orthogonal to the third direction. The third and fourth directions are rotated 45° with respect to the first and second directions so each sensing electrode is arranged between a bias electrode of the first pair and second pair. A DC bias current is supplied between the first and second pairs of bias electrodes. First and second Hall voltages are sensed at the first and second pairs of sensing electrodes.Type: ApplicationFiled: July 17, 2019Publication date: January 23, 2020Inventors: Marco Crescentini, Michele Biondi, Marco Tartagni, Aldo Romani, Roberto Canegallo
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Publication number: 20180203076Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.Type: ApplicationFiled: March 12, 2018Publication date: July 19, 2018Inventors: Marco Crescentini, Marco Tartagni, Aldo Romani, Roberto Canegallo, Marco Marchesi, Domenico Cristaudo
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Patent number: 9952291Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.Type: GrantFiled: April 29, 2016Date of Patent: April 24, 2018Assignee: STMicroelectronics S.r.l.Inventors: Marco Crescentini, Marco Tartagni, Aldo Romani, Roberto Canegallo, Marco Marchesi, Domenico Cristaudo
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Publication number: 20170030983Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.Type: ApplicationFiled: April 29, 2016Publication date: February 2, 2017Inventors: Marco CRESCENTINI, Marco TARTAGNI, Aldo ROMANI, Roberto CANEGALLO, Marco MARCHESI, Domenico CRISTAUDO