Abstract: Various embodiments of the present disclosure relate to monitoring the integrity of power signals within memory systems. A method can include receiving a power signal at a memory component, and monitoring, via a power signal monitoring component of the memory component, an integrity characteristic of the power signal. Responsive to the integrity characteristic meeting a particular criteria, the method can include providing a status indication to a control component external to the memory component.

Abstract: Charge pumps of integrated circuit devices might include an input configured to receive an internally-generated first voltage level, an output, and a plurality of stages between its input and output. A particular stage might include a voltage isolation device, a voltage driver, and a capacitance having a first electrode connected to an output of the voltage driver and a second electrode connected to the voltage isolation device. The voltage driver might be responsive to a clock signal and to a voltage level of the output of the voltage driver to selectively connect the output of the voltage driver to either a first voltage node configured to receive the first voltage level, a second voltage node configured to receive a second voltage level lower than the first voltage level, or a third voltage node configured to receive a third voltage level lower than the second voltage level.

Abstract: The disclosure describes a programmable power management system for NAND Flash devices. In one embodiment, dedicated match logic is provided to store program counters responsible for peak power consumption of one or more NAND Flash dies. Upon detecting that a current program counter equals a stored program counter, a high current enable signal is toggled causing at least one NAND Flash die to suspend operations, thereby reducing peak power consumption of the NAND Flash device.

Abstract: A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.

Abstract: A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.

Abstract: Virtual ground sensing circuits, control circuit, electrical systems, computing devices, and related methods are disclosed. A control circuit includes a virtual ground sensing circuit configured to provide a virtual ground to a conductive line. The virtual ground sensing circuit is further configured to selectively operably couple the conductive line to a sense node of a sense circuit, wherein the sense node having a sense node capacitance less than a capacitance of the conductive line. Further, virtual ground sensing circuit is configured to compare a sense node voltage to a reference voltage.

Abstract: A memory cell includes a first electrode and a second electrode. A select device and a programmable device are in series with each other between the first and second electrodes. The select device is proximate and electrically coupled to the first electrode. The programmable device is proximate and electrically coupled to the second electrode. The programmable device includes a radially inner electrode having radially outer sidewalls. Ferroelectric material is radially outward of the outer sidewalls of the inner electrode. A radially outer electrode is radially outward of the ferroelectric material. One of the outer electrode or the inner electrode is electrically coupled to the select device. The other of the outer electrode and the inner electrode is electrically coupled to the second electrode. Arrays of memory cells are disclosed.

Abstract: The disclosure describes a programmable power management system for NAND Flash devices. In one embodiment, dedicated match logic is provided to store program counters responsible for peak power consumption of one or more NAND Flash dies. Upon detecting that a current program counter equals a stored program counter, a high current enable signal is toggled causing at least one NAND Flash die to suspend operations, thereby reducing peak power consumption of the NAND Flash device.

Abstract: Methods of operating a memory, as well as memory configured to perform such method, include applying an intermediate read voltage to a selected access line for a read operation, adding noise to a sensing operation while applying the intermediate read voltage, determining a value indicative of a number of memory cells of a plurality of memory cells connected to the selected access line that are activated in response to applying the intermediate read voltage to the selected access line, and determining a plurality of read voltages for the read operation in response to the value indicative of the number of memory cells of the plurality of memory cells that are activated in response to applying the intermediate read voltage to the selected access line.

Abstract: The disclosure describes a programmable power management system for NAND Flash devices. In one embodiment, dedicated match logic is provided to store program counters responsible for peak power consumption of one or more NAND Flash dies. Upon detecting that a current program counter equals a stored program counter, a high current enable signal is toggled causing at least one NAND Flash die to suspend operations, thereby reducing peak power consumption of the NAND Flash device.

Abstract: The disclosure describes a programmable power management system for NAND Flash devices. In one embodiment, dedicated match logic is provided to store program counters responsible for peak power consumption of one or more NAND Flash dies. Upon detecting that a current program counter equals a stored program counter, a high current enable signal is toggled causing at least one NAND Flash die to suspend operations, thereby reducing peak power consumption of the NAND Flash device.

Abstract: Virtual ground sensing circuits, control circuit, electrical systems, computing devices, and related methods are disclosed. A control circuit includes a virtual ground sensing circuit configured to provide a virtual ground to a conductive line. The virtual ground sensing circuit is further configured to selectively operably couple the conductive line to a sense node of a sense circuit, wherein the sense node having a sense node capacitance less than a capacitance of the conductive line. Further, virtual ground sensing circuit is configured to compare a sense node voltage to a reference voltage.

Abstract: Memory devices for facilitating pattern matching and having an array of memory cells, a plurality of key registers to store a representation of a key word, and a plurality of multiplexers, each multiplexer of the plurality of multiplexers to select a representation of a bit from a key register of the plurality of key registers to compare to data stored in the array of memory cells.

Abstract: A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSS s) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.

Abstract: Charge pumps of integrated circuit devices might include an input configured to receive an internally-generated first voltage level, an output, and a plurality of stages between its input and output. A particular stage might include a voltage isolation device, a voltage driver, and a capacitance having a first electrode connected to an output of the voltage driver and a second electrode connected to the voltage isolation device.

Abstract: Methods of operating a memory, as well as memory configured to perform such method, include applying an intermediate read voltage to a selected access line for a read operation, adding noise to a sensing operation while applying the intermediate read voltage, determining a value indicative of a number of memory cells of a plurality of memory cells connected to the selected access line that are activated in response to applying the intermediate read voltage to the selected access line, and determining a plurality of read voltages for the read operation in response to the value indicative of the number of memory cells of the plurality of memory cells that are activated in response to applying the intermediate read voltage to the selected access line.

Abstract: A memory cell includes a first electrode and a second electrode. A select device and a programmable device are in series with each other between the first and second electrodes. The select device is proximate and electrically coupled to the first electrode. The programmable device is proximate and electrically coupled to the second electrode. The programmable device includes a radially inner electrode having radially outer sidewalls. Ferroelectric material is radially outward of the outer sidewalls of the inner electrode. A radially outer electrode is radially outward of the ferroelectric material. One of the outer electrode or the inner electrode is electrically coupled to the select device. The other of the outer electrode and the inner electrode is electrically coupled to the second electrode. Arrays of memory cells are disclosed.

Abstract: Methods of operating a voltage generation circuit include applying a clock signal to an input of a voltage driver of a stage of the voltage generation circuit, connecting the output of the voltage driver to a first voltage node configured to receive a first voltage when the clock signal has a particular logic level and a voltage level of an output of the voltage driver is less than a threshold, connecting the output of the voltage driver to a second voltage node configured to receive a second voltage, greater than the first voltage, when the clock signal has the particular logic level and the voltage level of the output of the voltage driver is greater than the threshold, and connecting the output of the voltage driver to a third voltage node configured to receive a third voltage, less than the first voltage, when the clock signal has a different logic level.

Abstract: A memory cell includes a first electrode and a second electrode. A select device and a programmable device are in series with each other between the first and second electrodes. The select device is proximate and electrically coupled to the first electrode. The programmable device is proximate and electrically coupled to the second electrode. The programmable device includes a radially inner electrode having radially outer sidewalls. Ferroelectric material is radially outward of the outer sidewalls of the inner electrode. A radially outer electrode is radially outward of the ferroelectric material. One of the outer electrode or the inner electrode is electrically coupled to the select device. The other of the outer electrode and the inner electrode is electrically coupled to the second electrode. Arrays of memory cells are disclosed.

Abstract: Methods of operating a memory including applying an intermediate read voltage to a selected access line for a read operation, adding noise to a sensing operation while applying the intermediate read voltage, determining a value indicative of a number of memory cells of a plurality of memory cells connected to the selected access line that are activated in response to applying the intermediate read voltage to the selected access line, and determining an expected data age of the plurality of memory cells in response to the value indicative of the number of memory cells of the plurality of memory cells that are activated in response to applying the intermediate read voltage to the selected access line.