Abstract: The present invention refers to a method for producing a low-emitting plasticised polyvinylchloride composition, having a fusion time of less than 5.50 s and a volatility of less than 10% weight loss, by mixing pentaerythritol tetravalerate with a polyvinylchloride composition, the fusion time being measured according to DIN 54 802 and ISO/DIS 4574 and the volatility being measured according to ISO 176 Method A. In a further aspect the present invention refers to a thermoplastic article suitable for use in environments where the article is exposed to heat, wherein the thermoplastic article is based on a plasticized polyvinylchloride composition produced by the method of the present invention.

Abstract: The present invention refers to a method for producing a low-emitting plasticised polyvinylchloride composition, having a fusion time of less than 5.50 s and a volatility of less than 10% weight loss, by mixing pentaerythritol tetravalerate with a polyvinylchloride composition, the fusion time being measured according to DIN 54 802 and ISO/DIS 4574 and the volatility being measured according to ISO 176 Method A. In a further aspect the present invention refers to a thermoplastic article suitable for use in environments where the article is exposed to heat, wherein the thermoplastic article is based on a plasticized polyvinylchloride composition produced by the method of the present invention.

Abstract: The present invention refers to a plasticiser, said plasticiser being an ester formed by reaction of a pentaerythritol and a monocarboxylic acid, having 4-5 carbon atoms. In a further aspect the present invention refers to the use of said plasticiser in blends and in a PVC resin. The plasticiser of the present invention is a non-phthalic plasticiser that has proven to have shorter fusion time and higher plasticising efficiency compared to commercial non-phthalic PVC plasticisers.

Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.

Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

Abstract: The present invention relates chemical mechanical planarization (“CMP”) of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4] nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.

Abstract: The present invention relates to the use di-, tri- and tetrapeptide fragments of oxytocin or mesotocin for the preparation of a pharmaceutical composition in order to create eustasis. The invention also relates to di-, tri- and tetrapeptide fragments of oxytocin or mesotocin for medical use, as well as a pharmaceutical composition comprising at least one di-, tri- or tetrapeptide fragment of oxytocin or mesotocin in order to create eustasis.

Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

Abstract: The present invention relates chemical mechanical planarization (“CMP”) of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4]nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.

Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.