Patents by Inventor Maribel Maldonado-Garcia
Maribel Maldonado-Garcia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12195851Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.Type: GrantFiled: June 10, 2021Date of Patent: January 14, 2025Assignee: Applied Materials, Inc.Inventors: Cong Trinh, Maribel Maldonado-Garcia, Mihaela A. Balseanu, Alexander V. Garachtchenko, Tsutomu Tanaka
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Publication number: 20240360561Abstract: An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.Type: ApplicationFiled: July 8, 2024Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Zohreh Razavi Hesabi, Cong Trinh, Kevin Griffin, Alexander V. Garachtchenko, Kenric Choi, Vipin Jose, Saloni Sawalkar, Maribel Maldonado-Garcia, Kendrick H. Chaney
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Patent number: 12084771Abstract: An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.Type: GrantFiled: March 2, 2021Date of Patent: September 10, 2024Assignee: Applied Materials, Inc.Inventors: Zohreh Razavi Hesabi, Cong Trinh, Kevin Griffin, Alexander V. Garachtchenko, Kenric Choi, Vipin Jose, Saloni Sawalkar, Maribel Maldonado-Garcia, Kendrick H. Chaney
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Publication number: 20240247405Abstract: A method for substrate processing includes flowing one or more process reactive gases into an upper volume of a processing chamber, flowing cleaning gas into a lower volume of the processing chamber, measuring temperature of an inner surface of the lower volume of the processing chamber, and adjusting temperature of the inner surface of the lower volume of the processing chamber, based on the measured temperature.Type: ApplicationFiled: January 24, 2023Publication date: July 25, 2024Inventors: Alexandros ANASTASOPOULOS, Zuoming ZHU, Maribel MALDONADO-GARCIA, Thomas KIRSCHENHEITER, Flora Fong-Song CHANG
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Patent number: 11932940Abstract: Silyl pseudohalides having a general formula of R4-nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.Type: GrantFiled: November 12, 2020Date of Patent: March 19, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
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Publication number: 20240038531Abstract: A method and apparatus for forming strain relaxed buffers that may be used in semiconductor devices incorporating superlattice structures are provided. The method includes epitaxially depositing a first silicon germanium layer over the substrate. The first silicon germanium layer has a first surface that contacts a frontside surface of the substrate and a second surface opposite the first surface. The first silicon germanium layer has a first thickness and a germanium concentration gradient that increases from the first surface to the second surface. The method further includes epitaxially depositing a silicon germanium capping layer on the first silicon germanium layer. The silicon germanium capping layer has a second thickness and a substantially uniform germanium concentration that is equal to, substantially equal to, or greater than a maximum germanium concentration of the germanium concentration gradient.Type: ApplicationFiled: January 18, 2023Publication date: February 1, 2024Inventors: Thomas KIRSCHENHEITER, John TOLLE, Abhishek DUBE, Maribel MALDONADO-GARCIA
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Patent number: 11800824Abstract: Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.Type: GrantFiled: March 24, 2021Date of Patent: October 24, 2023Assignee: Applied Materials, Inc.Inventors: Maribel Maldonado-Garcia, Cong Trinh, Mihaela A. Balseanu
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Patent number: 11732356Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.Type: GrantFiled: July 29, 2020Date of Patent: August 22, 2023Assignee: Applied Materials, Inc.Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
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Publication number: 20230096772Abstract: Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Applicant: Applied Materials, Inc.Inventors: Maribel Maldonado-Garcia, Cong Trinh, Mihaela A. Balseanu, Kevin Griffin, Ning Li, Zohreh Razavi Hesabi
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Publication number: 20220310909Abstract: Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.Type: ApplicationFiled: March 24, 2021Publication date: September 29, 2022Applicant: Applied Materials, Inc.Inventors: Maribel Maldonado-Garcia, Cong Trinh, Mihaela A. Balseanu
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Publication number: 20220282379Abstract: An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.Type: ApplicationFiled: March 2, 2021Publication date: September 8, 2022Applicant: Applied Materials, Inc.Inventors: Zohreh Razavi Hesabi, Cong Trinh, Kevin Griffin, Alexander V. Garachtchenko, Kenric Choi, Vipin Jose, Saloni Sawalkar, Maribel Maldonado-Garcia, Kendrick H. Chaney
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Publication number: 20210404058Abstract: Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.Type: ApplicationFiled: June 24, 2020Publication date: December 30, 2021Applicant: Applied Materials, Inc.Inventors: Maribel Maldonado-Garcia, Cong Trinh, Mihaela A. Balseanu, Kevin Griffin, Ning Li, Zohreh Razavi Hesabi
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Publication number: 20210388497Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.Type: ApplicationFiled: June 10, 2021Publication date: December 16, 2021Applicant: Applied Materials, Inc.Inventors: Cong Trinh, Maribel Maldonado-Garcia, Mihaela A. Balseanu, Alexander V. Garachtchenko, Tsutomu Tanaka
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Publication number: 20210265157Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.Type: ApplicationFiled: May 10, 2021Publication date: August 26, 2021Applicant: Applied Materials, Inc.Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
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Patent number: 11017997Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.Type: GrantFiled: January 11, 2018Date of Patent: May 25, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
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Publication number: 20210140046Abstract: Silyl pseudohalides having a general formula of R4?nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.Type: ApplicationFiled: November 12, 2020Publication date: May 13, 2021Applicant: Applied Materials, Inc.Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
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Publication number: 20210032749Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.Type: ApplicationFiled: July 29, 2020Publication date: February 4, 2021Applicant: Applied Materials, Inc.Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
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Publication number: 20190348271Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.Type: ApplicationFiled: January 11, 2018Publication date: November 14, 2019Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia