Patents by Inventor Maribel Maldonado-Garcia

Maribel Maldonado-Garcia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210265157
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Application
    Filed: May 10, 2021
    Publication date: August 26, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Patent number: 11017997
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: May 25, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Publication number: 20210140046
    Abstract: Silyl pseudohalides having a general formula of R4?nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
    Type: Application
    Filed: November 12, 2020
    Publication date: May 13, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
  • Publication number: 20210032749
    Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
  • Publication number: 20190348271
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Application
    Filed: January 11, 2018
    Publication date: November 14, 2019
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia