Patents by Inventor Marie-Helene Vaudaine

Marie-Helene Vaudaine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9783407
    Abstract: A microsystem and/or nanosystem type device is disclosed, comprising: a first substrate, or intermediate substrate, comprising a mobile part, a second substrate or support substrate, at least one lower electrode, and one dielectric layer (101) located between the first and second substrates, the dielectric layer being arranged between the lower electrode and the first substrate; the first substrate comprising through vias filled with conducting material in contact with said lower electrode.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: October 10, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Sophie Giroud, Audrey Berthelot, Vincent Larrey, Jean-Philippe Polizzi, Marie-Hélène Vaudaine
  • Patent number: 8999860
    Abstract: The process for the production of at least one silicon-based nanoelement (4), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer (1) comprising electrically doped silicon; forming, on the first layer (1), a second layer (2) based on silicon oxide with carbon atoms (3) dispersed in the said second layer (2); and exposing the first and second layers (1, 2) to an oxidizing atmosphere, so as to oxidize at least a first section (1a) of the first layer (1) at the interface of the said first layer (1) with the second layer (2) and to form the said at least one nanoelement (4) at the said first section (1a).
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: April 7, 2015
    Assignee: Commissariat a l'energie Atomique et aux Energies Alternatives
    Inventors: Vincent Larrey, Laurent Vandroux, Audrey Berthelot, Marie-Helene Vaudaine
  • Publication number: 20140179089
    Abstract: The process for the production of at least one silicon-based nanoelement (4), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer (1) comprising electrically doped silicon; forming, on the first layer (1), a second layer (2) based on silicon oxide with carbon atoms (3) dispersed in the said second layer (2); and exposing the first and second layers (1, 2) to an oxidizing atmosphere, so as to oxidize at least a first section (1a) of the first layer (1) at the interface of the said first layer (1) with the second layer (2) and to form the said at least one nanoelement (4) at the said first section (1a).
    Type: Application
    Filed: December 19, 2013
    Publication date: June 26, 2014
    Inventors: Vincent Larrey, Laurent Vandroux, Audrey Berthelot, Marie-Helene Vaudaine
  • Patent number: 8692337
    Abstract: A device being a micro-system and/or a nano-system which includes a first substrate, having at least one lower electrode and at least one dielectric layer, and includes an intermediate substrate extending across a main plane of the device and including a moving portion. The intermediate substrate is attached, outside the moving portion, by molecular bonding to the first substrate. The moving portion faces at least a portion of the lower electrode. The device also includes an upper substrate, attached to the intermediate substrate. The moving portion is movable between the lower electrode and the upper substrate. The first, intermediate, and upper substrates extend in a plane parallel to the main plane of the device. The lower electrode detects a component of the movement of the moving portion perpendicular to the plane of the device.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: April 8, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, FREESCALE Semiconductor Inc
    Inventors: Audrey Berthelot, Vincent Larrey, Jean-Philippe Polizzi, Marie-Hélène Vaudaine, Hemant Desai, Woo Tae Park
  • Publication number: 20130181302
    Abstract: A microsystem and/or nanosystem type device is disclosed, comprising: a first substrate, or intermediate substrate, comprising a mobile part, a second substrate or support substrate, at least one lower electrode, and one dielectric layer (101) located between the first and second substrates, the dielectric layer being arranged between the lower electrode and the first substrate; the first substrate comprising through vias filled with conducting material in contact with said lower electrode.
    Type: Application
    Filed: July 11, 2012
    Publication date: July 18, 2013
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Sophie Giroud, Audrey Berthelot, Vincent Larrey, Jean-Philippe Polizzi, Marie-Hélène Vaudaine
  • Publication number: 20130175643
    Abstract: A device is described of the micro-system and/or nano-system type including: a first substrate, including at least one electrode, called the lower electrode, and at least one dielectric layer, an intermediate substrate, extending across a plane, called the main plane of the device, including a moving portion, an upper substrate, attached to the intermediate substrate, where the said moving portion can be made to move between the lower electrode and the upper substrate.
    Type: Application
    Filed: July 11, 2012
    Publication date: July 11, 2013
    Applicants: FREESCALE SEMICONDUCTOR, Inc., COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Audrey Berthelot, Vincent Larrey, Jean-Philippe Polizzi, Marie-Helene Vaudaine, Hemant Desai, Woo Tae Park
  • Patent number: 7794610
    Abstract: The invention relates to a method for making an actuation system for an optical component comprising: etching of a first face of a component, to form pads on it, etching of a second face of the component, to expose a membrane made of the same material as the pads, production of the actuation means of the pads and the membrane.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: September 14, 2010
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Claire Divoux, Marie-Helene Vaudaine, Thierry Enot
  • Publication number: 20070137989
    Abstract: The invention relates to a method for making an actuation system for an optical component comprising: etching of a first face of a component, to form pads on it, etching of a second face of the component, to expose a membrane made of the same material as the pads, production of the actuation means of the pads and the membrane.
    Type: Application
    Filed: December 23, 2004
    Publication date: June 21, 2007
    Inventors: Claire Divoux, Marie-Helene Vaudaine, Thierry Enot
  • Patent number: 6522132
    Abstract: At least two magnetoresistors laid out perpendicularly are used. These magnetoresistors are installed in a bridge, the measurement signal being taken from the mid-point of the bridge. This signal is linear over a very wide range. Application to measurement of the orientation of a magnetic field or the angular position of an object.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: February 18, 2003
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Line Vieux-Rochaz, Marie-Hélène Vaudaine, Robert Cuchet, Thierry Braisaz
  • Patent number: 6075360
    Abstract: A magnetoresistive component and transducer for use therewith. The magnetoresistive component has a multilayer-type magnetoresistive strip bent in accordance with a repeated geometrical pattern (7a,7b). The pattern has at least one series of substantially parallel sections (7a,7b) for reducing the demagnetizing fields. The magnetoresistive strip (2) is formed from a stack (13) of magnetic metallic material layers (14) separated by non-magnetic metallic material layers (15). The magnetoresistive component is applicable to a transducer for reading information recorded in magnetic form or for detecting weak magnetic fields.
    Type: Grant
    Filed: August 24, 1994
    Date of Patent: June 13, 2000
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean Mouchot, Jean-Marc Fedeli, Line Vieux-Rochaz, Marie-Helene Vaudaine
  • Patent number: 5113575
    Abstract: Process for producing a magnetic head with an appropriately oriented easy axis of magnetization and head obtained by this process.According to the invention, a large magnetic pattern (52) is formed around a spacer and then said pattern is etched in order to give it the desired shape. In the narrow horizontal branch, the easy axis of magnetization is oriented parallel to the air gap.Application to magnetic recording.
    Type: Grant
    Filed: August 23, 1990
    Date of Patent: May 19, 1992
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Marc Fedeli, Hubert Moriceau, Viviane Muffato, Marie-Helene Vaudaine