Abstract: Systems, apparatus and methods for transporting substrates between system components of an electronic device manufacturing system are provided. The systems and apparatus include an electrostatic end effector having a base, an electrode pair on the base, and spacer members for spacing the substrate from the electrode pairs to provide a gap between the electrode pair and the substrate. Methods of the invention as well as numerous other aspects are provided.

Abstract: Systems, apparatus and methods for transporting substrates between system components of an electronic device manufacturing system are provided. The systems and apparatus include an electrostatic end effector having a base, an electrode pair on the base, and spacer members for spacing the substrate from the electrode pairs to provide a gap between the electrode pair and the substrate. Methods of the invention as well as numerous other aspects are provided.

Abstract: Systems, methods and apparatus are provided for moving substrates in electronic device manufacturing. In some aspects, end effectors having a base portion and at least three pads are provided. Each of the pads has a contact surface, and at least one of the contact surfaces has a curved shape. A substrate supported by the end effector may be moved at a relatively high lateral g-force without significant slipping relative to the pads. Additional aspects are provided.

Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.

Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.

Abstract: Embodiments of the present invention are directed to substrate processing systems having substrate transferring mechanisms that are compact, have small footprints, and provide fast and efficient substrate transfer to achieve high throughput. In specific embodiments, a unit slab construction is used for the chambers around the substrate transferring mechanism, enabling efficient system construction with improved alignment and at a lower cost. The chambers may share gas, pump, and other utilizes. In one embodiment, an apparatus for processing substrates includes at least three robot blades each configured to support a substrate. A robot is coupled with the at least three robot blades to simultaneously move the robot blades between at least three chambers and simultaneously transfer each of the substrates supported on the robot blades from one chamber to another chamber.

Abstract: An appparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.

Abstract: Backside particle contamination of semiconductor wafers subjected to chemical vapor deposition is significantly reduced by optimizing various process parameters, alone or in combination. A high quality oxide seasoning layer is deposited to improve adhesion and trapping of contaminants remaining after a prior chamber cleaning step. Second, wafer pre-heating reduces thermal stress on the wafer during physical contact between the wafer and heater. Third, the duration of the gas stabilization flow of thermally reactive process gas species prior to CVD reaction is reduced, thereby preventing side products produced during this stabilization flow from affecting the wafer backside. Fourth, the wafer heater is redesigned to minimize physical contact between the heater surface and the wafer backside.

Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.

Abstract: An apparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.