Abstract: A compression assembled semiconductor package for housing a power semiconductor die which includes two major pole pieces in intimate electrical contact with respective major electrodes of a power semiconductor die. The package includes a plastic molded insulation ring disposed around the power semiconductor die. The pole pieces are secured to respective ends of the plastic molded insulation ring. One of the pole pieces may include an annular flange that penetrates the plastic molded insulation ring from an interior wall thereof and is embedded in its body. The annular flange preferably comprises a projection having a squared tab and circular distal end that is received by a receiving groove having a notch (to receive the squared tab) and a cavity (to receive the distal end).

Abstract: A semiconductor device package comprises a perimeter wall snap fitted to a base having a semiconductor die mounted on the base. A lead is mounted on the opposite side of the die, and the die and a portion of the lead are protected by an encapsulant disposed within the perimeter wall.

Abstract: A process for joining a steel terminal to a copper electrode comprises applying a thin silver-copper flash to the surface of a copper electrode and bringing a steel surface into contact with the flash during high frequency welding. The weldment is improved compared to conventional welds that do not incorporate the flash layer. For example, a silver—18 wt % copper alloy having a thickness of about 180 microns produced uniform, high quality welds between nickel steel terminals and 99.999% pure copper electrodes.

Abstract: A compression assembled semiconductor package for housing a power semiconductor die which includes two major pole pieces in intimate electrical contact with respective major electrodes of a power semiconductor die. The package includes a plastic molded insulation ring disposed around the power semiconductor die. The pole pieces are secured to respective ends of the plastic molded insulation ring. One of the pole pieces may include an annular flange that penetrates the plastic molded insulation ring from an interior wall thereof and is embedded in its body. An annular flange may also be embedded in the plastic molded insulation ring and connected to an annular rib of a pole piece by a circular connector.

Abstract: A process for joining a steel terminal to a copper electrode comprises applying a thin silver-copper flash to the surface of a copper electrode and bringing a steel surface into contact with the flash during high frequency welding. The weldment is improved compared to conventional welds that do not incorporate the flash layer. For example, a silver—18 wt % copper alloy having a thickness of about 180 microns produced uniform, high quality welds between nickel steel terminals and 99.999% pure copper electrodes.

Abstract: A compression assembled semiconductor package for housing a power semiconductor die which includes two major pole pieces in intimate electrical contact with respective major electrodes of a power semiconductor die. The package includes a plastic molded insulation ring disposed around the power semiconductor die. The pole pieces are secured to respective ends of the plastic molded insulation ring. One of the pole pieces may include an annular flange that penetrates the plastic molded insulation ring from an interior wall thereof and is embedded in its body. The annular flange preferably comprises a projection having a squared tab and circular distal end that is received by a receiving groove having a notch (to receive the squared tab) and a cavity (to receive the distal end).

Abstract: A semiconductor device package comprises a perimeter wall snap fitted to a base having a semiconductor die mounted on the base. A lead is mounted on the opposite side of the die, and the die and a portion of the lead are protected by an encapsulant disposed within the perimeter wall.

Abstract: A compression assembled semiconductor package for housing a power semiconductor die which includes two major pole pieces in intimate electrical contact with respective major electrodes of a power semiconductor die. The package includes a plastic molded insulation ring disposed around the power semiconductor die. The pole pieces are secured to respective ends of the plastic molded insulation ring. One of the pole pieces may include an annular flange that penetrates the plastic molded insulation ring from an interior wall thereof and is embedded in its body. An annular flange may also be embedded in the plastic molded insulation ring and connected to an annular rib of a pole piece by a circular connector.

Abstract: A force-fit diode for high circuit application has a cylindrical constant diameter conductive body which has a tapered top and bottom peripheral edge. An axial conductor extends from one end of the housing. The tapered top and bottom peripheral edges allow the housing to be forced into an opening in the bus, with either the housing bottom or the axial lead being the first to enter the openings.

Abstract: A force-fit diode for high circuit application has a cylindrical constant diameter conductive body which has a tapered top and bottom peripheral edge. An axial conductor extends from one end of the housing. The tapered top and bottom peripheral edges allow the housing to be forced into an opening in the bus, with either the housing bottom or the axial lead being the first to enter the openings.