Patents by Inventor Mario Motz

Mario Motz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240085217
    Abstract: The described techniques address issues associated with hybrid current or magnetic field sensors used to detect both low- and high-frequency magnetic field components. The hybrid sensor implements a DC component rejection path in the high-frequency magnetic field component path. Both digital and analog implementations are provided, each functioning to generate a DC component cancellation signal to at least partially cancel a DC component of a current signal generated via the high-frequency magnetic field component path. The hybrid sensor provides a high-bandwidth, high-accuracy, and low DC offset hybrid current solution that also eliminates the need for DC decoupling capacitors in the high-frequency path. A modification is also described for implementing a Sigma-Delta (??) quantization noise reduction path to reduce the quantization noise and to improve accuracy.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 14, 2024
    Inventors: Mario Motz, Amirhossein Jouyaeian, Kofi Makinwa
  • Publication number: 20240069077
    Abstract: Disclosed is a re-configurable sensor arrangement (100) including a sensor device (110) and a controller device (120), both being configured to communicate with each other, wherein the controller device (120) is configured to transmit a pulse modulated signal (130) to the sensor device (110) via a one-wire voltage interface (140), and wherein the sensor device (110) is configured to receive the pulse modulated signal (130) via the one-wire voltage interface (140) and to re-configure its internal configuration in response to the received pulse modulated signal (130).
    Type: Application
    Filed: August 25, 2023
    Publication date: February 29, 2024
    Inventors: Diego LUNARDINI, Edwin Mario MOTZ, Nagasrinivasa Rao KURETI
  • Publication number: 20240069122
    Abstract: A magnetic sensor apparatus includes a magnetic field generating circuit which is configured to generate a magnetic field, a magnetic field sensor circuit which is configured to output a sensor signal in response to the magnetic field, which sensor signal has a signal amplitude dependent on a sensitivity of the magnetic field sensor circuit, an amplifier circuit which is configured to amplify the sensor signal and to output an amplified sensor signal with an amplified signal amplitude, and a control circuit which is configured to use a setting signal to set a supply signal of the magnetic field sensor circuit and/or a gain of the amplifier circuit such that the amplified signal amplitude corresponds to a target amplitude.
    Type: Application
    Filed: August 28, 2023
    Publication date: February 29, 2024
    Inventor: Edwin Mario MOTZ
  • Patent number: 11879951
    Abstract: Magnetic field sensor apparatuses are discussed. A magnetic field sensor apparatus in accordance with one example implementation in this case comprises a coil and a magnetic field sensor. A chip carrying the coil and the magnetic field sensor is arranged on a leadframe. The leadframe comprises a cutout.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: January 23, 2024
    Assignee: Infineon Technologies AG
    Inventor: Mario Motz
  • Patent number: 11863137
    Abstract: Systems and methods are provided for which a chopper modulator and a chopper demodulator of a chopped apparatus having a variable chopper frequency are described. A feedback path is used to reduce ripples and/or remaining offsets as a result of the variable chopper frequency.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: January 2, 2024
    Assignee: Infineon Technologies AG
    Inventors: Mario Motz, Umberto Aracri
  • Patent number: 11860047
    Abstract: The subject matter described herein relates to a semiconductor circuit arrangement with a semiconductor substrate with an integrated Hall sensor circuit. During a first clock phase PHspin1 a first electrical voltage signal ±VHallout(PHspin1) or ±VHallbias(PHspin1) can be generated in the Hall effect region that has a first dependency on a mechanical stress of the semiconductor substrate. During a second clock phase PHspin2 a second electrical voltage signal ±VHallout(PHspin2) or ±VHallbias(PHspin2) can be generated in the Hall effect region that has a second dependency on a mechanical stress of the semiconductor substrate. The semiconductor circuit arrangement is designed to ascertain a specific mechanical stress component based on a combination of the first electrical voltage signal ±VHallout(PHspin1) or ±VHallbias(PHspin1) and of the second electrical voltage signal ±VHallout(PHspin2) or ±VHallbias(PHspin2).
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: January 2, 2024
    Assignee: Infineon Technologies AG
    Inventor: Mario Motz
  • Patent number: 11846962
    Abstract: A bandgap reference circuit includes a bandgap reference core circuit that includes a first bipolar transistor having a first emitter current density and a first base-emitter voltage, a second bipolar transistor having a second emitter current density that is smaller than the first emitter current density and having a second base-emitter voltage, a resistor that is connected to the emitter of the second bipolar transistor, and a differential amplifier circuit that is configured to control first and second emitter currents through the first and second bipolar transistors, respectively, such that a sum of the second base-emitter voltage and a voltage drop across the resistor approximates the first base-emitter voltage. The bandgap reference circuit further includes a first replica bipolar transistor that emulates an operating point of the first bipolar transistor and a second replica bipolar transistor that emulates an operating point of the second bipolar transistor.
    Type: Grant
    Filed: May 10, 2022
    Date of Patent: December 19, 2023
    Assignee: Infineon Technologies AG
    Inventors: Mario Motz, Francesco Polo
  • Patent number: 11828625
    Abstract: The described techniques address issues associated with hybrid current or magnetic field sensors used to detect both low- and high-frequency magnetic field components. The hybrid sensor implements a DC component rejection path in the high-frequency magnetic field component path. Both digital and analog implementations are provided, each functioning to generate a DC component cancellation signal to at least partially cancel a DC component of a current signal generated via the high-frequency magnetic field component path. The hybrid sensor provides a high-bandwidth, high-accuracy, and low DC offset hybrid current solution that also eliminates the need for DC decoupling capacitors in the high-frequency path. A modification is also described for implementing a Sigma-Delta (??) quantization noise reduction path to reduce the quantization noise and to improve accuracy.
    Type: Grant
    Filed: April 5, 2022
    Date of Patent: November 28, 2023
    Assignee: Infineon Technologies AG
    Inventors: Mario Motz, Amirhossein Jouyaeian, Kofi Makinwa
  • Publication number: 20230370032
    Abstract: The present disclosure relates to chopper amplifier circuits with inherent chopper ripple suppression. Example implementations can realize a doubly utilized chopper amplifier circuit that is a current-saving circuit with a wake-up function that is capable of providing a self-wake signal in order to change into a fast, low-jitter/low-latency mode, and to provide a wake-up signal for a sleeping microprocessor or a system in response to signal changes.
    Type: Application
    Filed: July 27, 2023
    Publication date: November 16, 2023
    Inventor: Mario MOTZ
  • Publication number: 20230314176
    Abstract: The described techniques address issues associated with hybrid current or magnetic field sensors used to detect both low- and high-frequency magnetic field components. The hybrid sensor implements a DC component rejection path in the high-frequency magnetic field component path. Both digital and analog implementations are provided, each functioning to generate a DC component cancellation signal to at least partially cancel a DC component of a current signal generated via the high-frequency magnetic field component path. The hybrid sensor provides a high-bandwidth, high-accuracy, and low DC offset hybrid current solution that also eliminates the need for DC decoupling capacitors in the high-frequency path. A modification is also described for implementing a Sigma-Delta (??) quantization noise reduction path to reduce the quantization noise and to improve accuracy.
    Type: Application
    Filed: April 5, 2022
    Publication date: October 5, 2023
    Inventors: Mario Motz, Amirhossein Jouyaeian, Kofi Makinwa
  • Patent number: 11728823
    Abstract: Apparatuses and methods for analog-digital conversion and corresponding systems having a sensor and an apparatus of this type are provided. Demodulation is executed with no variable preamplification, followed by continuous-time analog-digital conversion, at least in time segments, which further employs chopper techniques.
    Type: Grant
    Filed: November 24, 2021
    Date of Patent: August 15, 2023
    Assignee: Infineon Technologies AG
    Inventors: Mario Motz, Florian Brugger, Carlos Humberto Garcia Rojas, Tobias Werth
  • Publication number: 20230243673
    Abstract: According to one example implementation, an angle sensor apparatus is provided, including: a sensor arrangement that is configured to respond to a rotational movement of a rotatable object by providing at least two phase-shifted measurement signals, an angle determination device that is configured to take the at least two phase-shifted measurement signals as a basis for determining an angular position, and a difference calculation device that is configured to determine a difference between the angular position determined by the angle determination device and an output from a counter, the counter being configured to be controlled based on the difference.
    Type: Application
    Filed: January 19, 2023
    Publication date: August 3, 2023
    Inventor: Edwin Mario MOTZ
  • Patent number: 11716060
    Abstract: The present disclosure relates to chopper amplifier circuits with inherent chopper ripple suppression. Example implementations can realize a doubly utilized chopper amplifier circuit that is a current-saving circuit with a wake-up function that is capable of providing a self-wake signal in order to change into a fast, low-jitter/low-latency mode, and to provide a wake-up signal for a sleeping microprocessor or a system in response to signal changes.
    Type: Grant
    Filed: March 14, 2022
    Date of Patent: August 1, 2023
    Assignee: Infineon Technologies AG
    Inventor: Mario Motz
  • Patent number: 11693066
    Abstract: Signal processing circuit for a Hall sensor and signal processing method. Signal processing circuits for four-phase spinning Hall magnetic field sensors, corresponding methods and corresponding magnetic field sensor apparatuses are provided. In this case, a correction signal (c) is generated on the basis of a first feedback signal (fb1) and a second feedback signal (fb2), wherein the first feedback signal (fb1) is provided with a shorter signal propagation time than the second feedback signal (fb2).
    Type: Grant
    Filed: December 10, 2020
    Date of Patent: July 4, 2023
    Assignee: Infineon Technologies AG
    Inventors: Yongjia Li, Umberto Aracri, Mario Motz
  • Patent number: 11668767
    Abstract: The present disclosure relates to a magnetic field sensor circuit including at least one coil for measuring a magnetic field, a first stage amplifier circuit coupled to the coil and having a first transfer function with a pole at a first frequency, and a second stage amplifier circuit coupled to an output of the first stage amplifier circuit and having a second transfer function with a zero at the first frequency. In some embodiments, a temperature dependent frequency drift of the pole of the first transfer function corresponds to a temperature dependent frequency drift of the zero of the second transfer function.
    Type: Grant
    Filed: January 28, 2022
    Date of Patent: June 6, 2023
    Assignee: Infineon Technologies AG
    Inventors: Mario Motz, Qinwen Fan, Amirhossein Jouyaeian, Kofi Makinwa
  • Patent number: 11662756
    Abstract: An integrated circuit includes a first bandgap voltage reference sub-circuit configured to provide a first bandgap reference voltage; a second bandgap voltage reference sub-circuit configured to provide a second bandgap reference voltage; a voltage regulator sub-circuit configured to derive a first supply voltage using the first bandgap reference voltage and a second supply voltage using the second bandgap reference voltage; a bandgap comparator sub-circuit configured to derive a first internal voltage and a second internal voltage from the first supply voltage, wherein the first internal voltage decreases at a higher rate than the second internal voltage with respect to a decreasing first supply voltage, wherein the bandgap comparator sub-circuit is configured indicate which of the first and the second internal voltages is larger; and a comparator sub-circuit configured to indicate whether a difference between the first supply voltage and the second supply voltage is larger than a predefined threshold.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: May 30, 2023
    Assignee: Infineon Technologies AG
    Inventors: Mario Motz, Umberto Aracri, Alessandro Michelutti
  • Publication number: 20230138691
    Abstract: The present disclosure relates to a sensor circuit including a control circuit configured to control a constant first signal to a ratiometric second signal using a first amplifier adjustable by an actuating signal, and an adjustable second amplifier for a sensor signal, the gain of which is adjustable by the actuating signal.
    Type: Application
    Filed: October 11, 2022
    Publication date: May 4, 2023
    Inventor: Mario MOTZ
  • Patent number: 11598824
    Abstract: Methods and apparatuses are provided, in which a magnetic field is measured using a coil in a first operating mode and a magnetic field is generated using the coil in a second operating mode in order to test a further magnetic field sensor.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: March 7, 2023
    Assignee: Infineon Technologies AG
    Inventor: Mario Motz
  • Patent number: 11515887
    Abstract: A device includes a sensor configured to output an analog sensor signal, an analog-to-digital converter circuit configured to convert the analog sensor signal into a sigma-delta-modulated digital signal having a bit width of n bits, and a pulse width modulator configured to generate a pulse-width-modulated signal based on the sigma-delta-modulated digital signal.
    Type: Grant
    Filed: March 24, 2021
    Date of Patent: November 29, 2022
    Assignee: Infineon Technologies AG
    Inventor: Mario Motz
  • Publication number: 20220374037
    Abstract: A bandgap reference circuit includes a bandgap reference core circuit that includes a first bipolar transistor having a first emitter current density and a first base-emitter voltage, a second bipolar transistor having a second emitter current density that is smaller than the first emitter current density and having a second base-emitter voltage, a resistor that is connected to the emitter of the second bipolar transistor, and a differential amplifier circuit that is configured to control first and second emitter currents through the first and second bipolar transistors, respectively, such that a sum of the second base-emitter voltage and a voltage drop across the resistor approximates the first base-emitter voltage. The bandgap reference circuit further includes a first replica bipolar transistor that emulates an operating point of the first bipolar transistor and a second replica bipolar transistor that emulates an operating point of the second bipolar transistor.
    Type: Application
    Filed: May 10, 2022
    Publication date: November 24, 2022
    Applicant: Infineon Technologies AG
    Inventors: Mario MOTZ, Francesco POLO