Patents by Inventor Mark Alexander Vinson

Mark Alexander Vinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4116720
    Abstract: This disclosure relates to a method of making a V-MOS field effect transistor which does not require the extra steps of epitaxial growth in order to form the source area of the transistor. The formation of the source area is achieved by masking the silicon substrate, opening an aperture in the mask and then etching the silicon substrate in such a manner as to undercut the mask so that the mask provides a shield to subsequent ion implanting of the source area. Both P and N type dopants can be separately implanted with different energy levels so as to form an enhanced PN junction capacitance for the device. Such a field effect transistor can be achieved without the formation of a graded dopant concentration in the channel between the source and drain areas of the transistor and is provided with enhanced source capacitance.
    Type: Grant
    Filed: December 27, 1977
    Date of Patent: September 26, 1978
    Assignee: Burroughs Corporation
    Inventor: Mark Alexander Vinson