Abstract: A data storage device may generally be constructed and operated with at least a controller configured to identify a variance from a predetermined threshold in at least one variable resistance memory cell and upgrade a first error correction code (ECC) level to a second ECC level for the at least one variable resistance memory cell.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a non-volatile memory is arranged into a plurality of blocks, with each of the blocks constituting an integral plural number N of fixed-sized, multi-bit transfer units. A processing circuit retrieves at least a portion of the data stored in a selected block to a volatile memory buffer in response to a transfer unit (TU) bit map. The TU bit map is stored in a memory and provides a multi-bit sequence of bits corresponding to the N transfer units of the selected block. The values of the bits in the multi-bit sequence of bits indicate whether the corresponding transfer units are to be retrieved.

Abstract: A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy information that is useful to aid in reading and/or decoding the first data set. The act of writing the second data set increases the data reliability of the first data set. The second data set may be a null pattern, such as all erased bits.

Abstract: Method and apparatus for managing a memory, such as but not limited to a flash memory. In accordance with some embodiments, initial state information is stored which identifies an actual state of a garbage collection unit (GCU) of a memory during a normal operational mode. During a restoration mode after a memory power cycle event, a virtualized state of the GCU is determined responsive to the initial state information and to data read from the GCU. The memory is transitioned from the restoration mode to the normal operational mode once the virtualized state for the GCU is determined.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a memory module has a plurality of solid-state non-volatile memory cells. A controller communicates a first command having address information and a first operation code. The first operation code identifies a first action to be taken by the memory module in relation to the address information. The controller subsequently communicates a second command having a second operation code without corresponding address information. The memory module takes a second action identified by the second command using the address information from the first command.

Abstract: A host read request affects a request address range of a main storage. A speculative address range proximate to the request address range is defined. Speculative data stored in the speculative address range is not requested via the host read request. A criterion is determined that is indicative of future read requests of associated with the speculative data. The speculative data is copied from the main storage to at least one of a non-volatile cache and a volatile cache together with data of the host read request in response to the criterion meeting a threshold. The non-volatile cache and the volatile cache mirror respective portions of the main storage.

Abstract: An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.

Abstract: A data storage device may generally be constructed and operated with at least one variable resistance memory cell configured with non-factory operational parameters by a controller. The non-factory operational parameters are assigned in response to an identified variance from a predetermined threshold in at least one variable resistance memory cell.

Abstract: Parameters indicative of resistance variance of the memory elements are tracked. The resistance variance affects values of data stored in the resistance-based memory elements. A hash function is performed for each memory element. The hash function returns a reference to one of a plurality of counter elements. A value of each counter element is modified in response to the tracked parameter data of the associated memory element. Read operations affecting the memory elements are adjusted based on the values for the associated counter elements.

Abstract: A tiered memory system includes a memory controller for a primary memory and a secondary memory, where the secondary memory is used as a cache for the primary memory. The memory controller is configured to cause redundant data that is stored in the primary memory of the memory system to be stored in first memory locations of the secondary memory. The controller causes data that is not stored in the primary memory to be stored in second memory locations of the secondary memory. The second memory locations have at least one of lower bit error rate and higher access speed than the first memory locations.

Abstract: Method and apparatus for managing data in a memory. In accordance with some embodiments, a first data object and an associated first ECC data set are generated and stored in a non-volatile (NV) main memory responsive to a first set of data blocks having a selected logical address. A second data object and an associated second ECC data set are generated responsive to receipt of a second set of data blocks having the selected logical address. The second data object and the second ECC data set are subsequently stored in the in the NV main memory responsive to a mismatch between the first ECC data set and the second ECC data set.

Abstract: Method and apparatus for managing a memory, such as but not limited to a flash memory. In accordance with some embodiments, initial state information is stored which identifies an actual state of a garbage collection unit (GCU) of a memory during a normal operational mode. During a restoration mode after a memory power cycle event, a virtualized state of the GCU is determined responsive to the initial state information and to data read from the GCU. The memory is transitioned from the restoration mode to the normal operational mode once the virtualized state for the GCU is determined.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a memory module has a plurality of solid-state non-volatile memory cells. A controller communicates a first command having address information and a first operation code. The first operation code identifies a first action to be taken by the memory module in relation to the address information. The controller subsequently communicates a second command having a second operation code without corresponding address information. The memory module takes a second action identified by the second command using the address information from the first command.

Abstract: A data storage device includes one or more storage media that include multiple physical storage locations. The device also includes at least one cache memory having a logical space that includes a plurality of separately managed logical block address (LBA) ranges. Additionally, a controller is included in the device. The controller is configured to receive data extents addressed by a first LBA and a logical block count. The controller is also configured to identify at least one separately managed LBA range of the plurality of separately managed LBA ranges in the at least one cache memory based on LBAs associated with at least some of the received data extents. The controller stores the at least some of the received data extents in substantially monotonically increasing LBA order in at least one physical storage location, of the at least one cache memory, assigned to the identified at least one LBA range.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a memory has a plurality of solid-state non-volatile memory cells. A processing circuit is connected to the memory and configured to direct the execution of a plurality of read error recovery routines in response to at least one uncorrectable read error in a data set retrieved from the memory. The recovery routines are executed in a selected order based on an elapsed recovery time parameter for each of the recovery routines and an estimated probability of success of each of the recovery routines.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a memory module has a plurality of solid-state non-volatile memory cells. A controller communicates a first command having address information and a first operation code. The first operation code identifies a first action to be taken by the memory module in relation to the address information. The controller subsequently communicates a second command having a second operation code without corresponding address information. The memory module takes a second action identified by the second command using the address information from the first command.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, the apparatus has a solid-state non-volatile memory and a processing circuit configured to write data to a selected location of the memory. The data are arranged in the form of multi-bit code words each comprising a user data payload and associated parity data configured to correct one or more bit errors in the user data payload. The processing circuit adjusts at least a selected one of a size of the code words, a size of the user data payloads or a size of the parity data responsive to at least a selected one of an accumulated count of access operations upon the selected location or an error rate associated with the selected location.

Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a non-volatile memory is arranged into a plurality of blocks, with each of the blocks constituting an integral plural number N of fixed-sized, multi-bit transfer units. A processing circuit retrieves at least a portion of the data stored in a selected block to a volatile memory buffer in response to a transfer unit (TU) bit map. The TU bit map is stored in a memory and provides a multi-bit sequence of bits corresponding to the N transfer units of the selected block. The values of the bits in the multi-bit sequence of bits indicate whether the corresponding transfer units are to be retrieved.

Abstract: Torn write mitigation circuitry determines if a write operation to memory is in progress at or about a time of power loss. In response to the write operation being in progress at or about the time of the power loss, the torn write mitigation circuitry causes torn write data and metadata to be stored to a non-volatile cache. The torn write data comprise data left in a degraded or uncorrectable state as a result of the loss of power. The metadata describe the torn write data.

Abstract: Method and apparatus for managing a memory, such as but not limited to a flash memory. In accordance with some embodiments, initial state information is stored which identifies an actual state of a garbage collection unit (GCU) of a memory during a normal operational mode. During a restoration mode after a memory power cycle event, a virtualized state of the GCU is determined responsive to the initial state information and to data read from the GCU. The memory is transitioned from the restoration mode to the normal operational mode once the virtualized state for the GCU is determined.