Patents by Inventor Mark G. Johnson

Mark G. Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150044833
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Application
    Filed: September 23, 2014
    Publication date: February 12, 2015
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Igor G. Kouznetsov, Mark G. Johnson, Paul Michael Farmwald
  • Patent number: 8897056
    Abstract: A pillar-shaped memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. Other aspects are also provided.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: November 25, 2014
    Assignee: SanDisk 3D LLC
    Inventors: Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, James M. Cleeves
  • Patent number: 8853765
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: October 7, 2014
    Assignee: Sandisk 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Igor G. Kouznetsov, Mark G. Johnson, Paul Michael Farmwald
  • Patent number: 8823076
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: September 2, 2014
    Assignee: SanDisk 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Igor G. Kouznetzov, Mark G. Johnson, Paul Michael Farmwald
  • Publication number: 20140239248
    Abstract: A three-dimensional memory is provided that includes a first memory level and a second memory level monolithically formed above the first memory level. The first memory level includes a first steering element coupled in series with and vertically stacked above or below a first non-volatile state change element. The second memory level includes a second steering element coupled in series with and vertically stacked above or below a second non-volatile state change element. Other aspects are also provided.
    Type: Application
    Filed: May 6, 2014
    Publication date: August 28, 2014
    Applicant: SanDisk 3D LLC
    Inventors: Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, James M. Cleeves
  • Publication number: 20140225180
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Application
    Filed: March 27, 2014
    Publication date: August 14, 2014
    Applicant: SANDISK 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Igor G. Kouznetsov, Mark G. Johnson, Paul Michael Farmwald
  • Publication number: 20140217491
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Application
    Filed: March 27, 2014
    Publication date: August 7, 2014
    Applicant: SANDISK 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Igor G. Kouznetzov, Mark G. Johnson, Paul Michael Farmwald
  • Publication number: 20130314970
    Abstract: A pillar-shaped memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. Other aspects are also provided.
    Type: Application
    Filed: July 29, 2013
    Publication date: November 28, 2013
    Applicant: SanDisk 3D LLC
    Inventors: Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, James M. Cleeves
  • Patent number: 8575719
    Abstract: Silicon nitride antifuses can be advantageously used in memory arrays employing diode-antifuse cells. Silicon nitride antifuses can be ruptured faster and at a lower breakdown field than antifuses formed of other materials, such as silicon dioxide. Examples are given of monolithic three dimensional memory arrays using silicon nitride antifuses with memory cells disposed in rail-stacks and pillars, and including PN and Schottky diodes. Pairing a silicon nitride antifuse with a low-density, high-resistivity conductor gives even better device performance.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: November 5, 2013
    Assignee: SanDisk 3D LLC
    Inventors: Mark G. Johnson, N. Johan Knall, S. Brad Herner
  • Patent number: 8503215
    Abstract: A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: August 6, 2013
    Assignee: SanDisk 3D LLC
    Inventors: Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, James M. Cleeves
  • Publication number: 20120250396
    Abstract: A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.
    Type: Application
    Filed: June 19, 2012
    Publication date: October 4, 2012
    Inventors: Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, James M. Cleeves
  • Publication number: 20120223380
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Application
    Filed: May 10, 2012
    Publication date: September 6, 2012
    Applicant: SanDisk 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Andrew J. Walker, Christopher J. Petti, Igor G. Kouznetzov, Mark G. Johnson, Paul Michael Farmwald, Brad Herner
  • Patent number: 8208282
    Abstract: A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: June 26, 2012
    Assignee: SanDisk 3D LLC
    Inventors: Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, James M. Cleeves
  • Patent number: 7978492
    Abstract: A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: July 12, 2011
    Assignee: SanDisk 3D LLC
    Inventors: Mark G. Johnson, Thomas H. Lee, James M. Cleeves
  • Publication number: 20110156044
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Application
    Filed: February 14, 2011
    Publication date: June 30, 2011
    Applicant: SanDisk 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Andrew J. Walker, Christopher J. Petti, Igor G. Kouznetzov, Mark G. Johnson, Paul Michael Farmwald, Brad Herner
  • Publication number: 20110019467
    Abstract: A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
    Type: Application
    Filed: October 7, 2010
    Publication date: January 27, 2011
    Inventors: Mark G. Johnson, Thomas H. Lee, Vivek Subramanian, Paul Michael Farmwald, James M. Cleeves
  • Patent number: 7863951
    Abstract: Methods are described for providing an adaptive trip point detector circuit that receives an input signal at an input signal node and generates an output signal at an output signal node, the output signal changing from a first value to a second value when the input signal exceeds a trip point reference value. In particular, the trip point reference value is adjusted to compensate for variations in process or temperature.
    Type: Grant
    Filed: May 23, 2007
    Date of Patent: January 4, 2011
    Assignee: SanDisk 3D LLC
    Inventors: Tyler J. Thorp, Mark G. Johnson, Brent Haukness
  • Patent number: 7863950
    Abstract: Apparatus are described for providing an adaptive trip point detector circuit that receives an input signal at an input signal node and generates an output signal at an output signal node, the output signal changing from a first value to a second value when the input signal exceeds a trip point reference value. In particular, the trip point reference value is adjusted to compensate for variations in process or temperature.
    Type: Grant
    Filed: May 23, 2007
    Date of Patent: January 4, 2011
    Assignee: SanDisk 3D LLC
    Inventors: Tyler J. Thorp, Mark G. Johnson, Brent Haukness
  • Patent number: 7825455
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Grant
    Filed: January 23, 2009
    Date of Patent: November 2, 2010
    Assignee: SanDisk 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Mark G. Johnson, Paul M. Farmwald, Igor G. Kouznetsov
  • Publication number: 20100171152
    Abstract: A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
    Type: Application
    Filed: March 16, 2010
    Publication date: July 8, 2010
    Inventors: Mark G. Johnson, Thomas H. Lee, James M. Cleeves