Patents by Inventor Mark Jon Loboda

Mark Jon Loboda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9187602
    Abstract: Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared.
    Type: Grant
    Filed: February 4, 2008
    Date of Patent: November 17, 2015
    Assignee: Dow Corning Corporation
    Inventors: Dimitris Elias Katsoulis, Mark Jon Loboda, Elizabeth McQuiston, Luisel Rodriguez
  • Publication number: 20100041851
    Abstract: Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared.
    Type: Application
    Filed: February 4, 2008
    Publication date: February 18, 2010
    Applicant: DOW CORNING CORPORATION
    Inventors: Dimitris Elias Katsoulis, Mark Jon Loboda, Elizabeth Mc Quiston, Luisel Rodriguez
  • Patent number: 7189664
    Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
    Type: Grant
    Filed: January 26, 2004
    Date of Patent: March 13, 2007
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Byung Keun Hwang
  • Publication number: 20040166692
    Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
    Type: Application
    Filed: February 26, 2003
    Publication date: August 26, 2004
    Inventors: Mark Jon Loboda, Byung Keun Hwang
  • Patent number: 6667553
    Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: December 23, 2003
    Assignee: Dow Corning Corporation
    Inventors: Glenn Allen Cerny, Byung Keun Hwang, Mark Jon Loboda
  • Patent number: 6593655
    Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
    Type: Grant
    Filed: August 14, 2000
    Date of Patent: July 15, 2003
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Jeffrey Alan Seifferly
  • Patent number: 6593248
    Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.
    Type: Grant
    Filed: March 20, 2002
    Date of Patent: July 15, 2003
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Byung Keun Hwang
  • Publication number: 20030111662
    Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.
    Type: Application
    Filed: November 21, 2001
    Publication date: June 19, 2003
    Inventors: Glenn Allen Cerny, Byung Keun Hwang, Mark Jon Loboda
  • Publication number: 20020173172
    Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.
    Type: Application
    Filed: March 20, 2002
    Publication date: November 21, 2002
    Inventors: Mark Jon Loboda, Byung Keun Hwang
  • Publication number: 20020137323
    Abstract: An integrated circuit comprising a subassembly of solid state devices formed into a substrate made of a semiconducting material. The devices within the subassembly are connected by metal wiring formed from conductive metals. A diffusion barrier layer of an alloy film having the composition of SiwCxOyHz where w has a value of 10 to 33, preferably 18 to 20 atomic %, x has a value of 1 to 66, preferably 18 to 21 atomic percent, y has a value of 1 to 66, preferably 5 to 38 atomic % and z has a value of 0.1 to 60, preferably 25 to 32 atomic %; and w+x+y+z=100 atomic % is formed on at least the metal wiring.
    Type: Application
    Filed: January 3, 2002
    Publication date: September 26, 2002
    Inventor: Mark Jon Loboda
  • Patent number: 6268262
    Abstract: Disclosed is a method for making an air bridge in an electronic device. This method uses amorphous silicon carbide to protect electrical conductors in the device during formation of the bridge. The silicon carbide also provides hermetic and physical protection to the device after formation.
    Type: Grant
    Filed: August 11, 1997
    Date of Patent: July 31, 2001
    Assignee: Dow Corning Corporation
    Inventor: Mark Jon Loboda
  • Patent number: 6159871
    Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: December 12, 2000
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Jeffrey Alan Seifferly
  • Patent number: 5863595
    Abstract: This invention pertains to a method of forming a coating on an electronic substrate and to the electronic substrates coated thereby. The method comprises applying on the electronic substrate a coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH).sub.3 where R is selected from the group consisting of an alkyl radical having from 1 to 3 carbon atoms, the vinyl radical, the 3,3,3-trifluoropropyl radical, the gamma-glycidoxypropyl radical and the gamma-methacryloxypropyl radical with the provision that at least 70% of the R radicals are methyl, and thereafter ceramifying the coating by heating at a temperature of about 200.degree. C. to 1000.degree. C. The use of the coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH).sub.3 allows for the formation of thick planarizing coatings on the electronic substrate.
    Type: Grant
    Filed: January 10, 1997
    Date of Patent: January 26, 1999
    Assignee: Dow Corning Corporation
    Inventors: Robert Charles Camilletti, Diana Kay Deese, Loren Andrew Haluska, Mark Jon Loboda, Keith Winton Michael
  • Patent number: 5820923
    Abstract: Silica-containing ceramic coatings are produced on substrates at low temperatures by applying a coating comprising a silica precursor on a substrate and heating the coated substrate under an environment comprising nitrous oxide at a temperature sufficient to convert the silica precursor to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.
    Type: Grant
    Filed: November 2, 1992
    Date of Patent: October 13, 1998
    Assignee: Dow Corning Corporation
    Inventors: David Stephen Ballance, Loren Andrew Haluska, Mark Jon Loboda
  • Patent number: 5818071
    Abstract: Disclosed is the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material. This advancement allows for the use of low resistivity metals and low dielectric constant dielectric layers in integrated circuits and wiring boards.
    Type: Grant
    Filed: February 2, 1995
    Date of Patent: October 6, 1998
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Keith Winton Michael
  • Patent number: 5693565
    Abstract: A semiconductor integrated circuit (IC) die is made with enhanced resilience to handling, testing, and storage, associated with its qualification and distribution as a KNOWN GOOD DIE (KGD). The IC device has a mechanically tough and chemically inert top layer to protect it from damage. The device contacts are made of thin film metals which facilitate reversible electrical connections used in KGD testing. The overall contact structure protects the device from irreversible damage during the connection, test, and disconnection sequence.
    Type: Grant
    Filed: July 15, 1996
    Date of Patent: December 2, 1997
    Assignee: Dow Corning Corporation
    Inventors: Robert Charles Camilletti, Mark Jon Loboda, Keith Winton Michael