Patents by Inventor Mark S. Birritella

Mark S. Birritella has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4571817
    Abstract: A means and method is described for forming closely spaced contacts to adjacent semiconductor regions, such as the base and emitter of a bipolar transistor, so that the lateral voltage drops between the contacts and an intervening junction are minimized. The emitter and base and the contacts thereto are self-aligned. This is accomplished by a structure utilizing two poly-layers separated by one or more intermediate dielectric layers. The upper of the two poly-layers serves as a selective etching mask for defining the contact geometry and separation. The lower of the two poly-layers has one portion which becomes a poly-contact and diffusion source for the base region and a second portion which becomes a poly-contact and diffusion source for the emitter region. A single mask is used in connection with ion bombardment to alter the etch rate of portions of the poly-layers. This mask together with subsequent etch steps, defines the emitter width and location and the base-emitter contact separation.
    Type: Grant
    Filed: March 15, 1985
    Date of Patent: February 25, 1986
    Assignee: Motorola, Inc.
    Inventors: Mark S. Birritella, Kevin McLaughlin