Patents by Inventor Marko J. Tuominen
Marko J. Tuominen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11640899Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: GrantFiled: October 25, 2021Date of Patent: May 2, 2023Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Publication number: 20220051872Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: October 25, 2021Publication date: February 17, 2022Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Patent number: 11230769Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: GrantFiled: May 22, 2020Date of Patent: January 25, 2022Assignee: ASM IP HOLDING B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Publication number: 20200308709Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: May 22, 2020Publication date: October 1, 2020Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Patent number: 10662533Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: GrantFiled: April 22, 2019Date of Patent: May 26, 2020Assignee: ASM IP Holding B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Patent number: 10665425Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: GrantFiled: April 22, 2019Date of Patent: May 26, 2020Assignee: ASM IP Holding B.V.Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Publication number: 20190249312Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Publication number: 20190244786Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: April 22, 2019Publication date: August 8, 2019Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Patent number: 9587307Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: GrantFiled: July 24, 2013Date of Patent: March 7, 2017Assignee: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Publication number: 20140087076Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: ApplicationFiled: July 24, 2013Publication date: March 27, 2014Applicant: ASM International N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Patent number: 8501275Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: GrantFiled: September 21, 2011Date of Patent: August 6, 2013Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Publication number: 20120189774Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: ApplicationFiled: September 21, 2011Publication date: July 26, 2012Applicant: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Patent number: 8025922Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: GrantFiled: March 14, 2006Date of Patent: September 27, 2011Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu