Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: Optical alignment of an optical connector to input/output couplers of a photonic integrated circuit can be achieved by first actively aligning the optical connector successively to two loopback alignment features formed in the photonic chip of the PIC, optically unconnected to the PIC, and then moving the optical connector, based on precise knowledge of the positions of the loopback alignment features relative to the input/output couplers of the PIC, to a position aligned with the input/output couplers of the PIC and locking it in place.

Abstract: Optical alignment of an optical connector to input/output couplers of a photonic integrated circuit can be achieved by first actively aligning the optical connector successively to two loopback alignment features formed in the photonic chip of the PIC, optically unconnected to the PIC, and then moving the optical connector, based on precise knowledge of the positions of the loopback alignment features relative to the input/output couplers of the PIC, to a position aligned with the input/output couplers of the PIC and locking it in place.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: Optical alignment of an optical connector to input/output couplers of a photonic integrated circuit can be achieved by first actively aligning the optical connector successively to two loopback alignment features formed in the photonic chip of the PIC, optically unconnected to the PIC, and then moving the optical connector, based on precise knowledge of the positions of the loopback alignment features relative to the input/output couplers of the PIC, to a position aligned with the input/output couplers of the PIC and locking it in place.

Abstract: Optical alignment of an optical connector to input/output couplers of a photonic integrated circuit can be achieved by first actively aligning the optical connector successively to two loopback alignment features formed in the photonic chip of the PIC, optically unconnected to the PIC, and then moving the optical connector, based on precise knowledge of the positions of the loopback alignment features relative to the input/output couplers of the PIC, to a position aligned with the input/output couplers of the PIC and locking it in place.

Abstract: Optical alignment of an optical connector to input/output couplers of a photonic integrated circuit can be achieved by first actively aligning the optical connector successively to two loopback alignment features formed in the photonic chip of the PIC, optically unconnected to the PIC, and then moving the optical connector, based on precise knowledge of the positions of the loopback alignment features relative to the input/output couplers of the PIC, to a position aligned with the input/output couplers of the PIC and locking it in place.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.