Patents by Inventor Martin Andrew Green
Martin Andrew Green has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11881536Abstract: Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, ? or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, ? or 0 includes an element not formally being from group VIII, VII, VI, V, IV, III, II, ? or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.Type: GrantFiled: February 15, 2019Date of Patent: January 23, 2024Assignee: NewSouth Innovations Pty LimitedInventors: Xiaojing Hao, Robert John Patterson, Shiyou Chen, Martin Andrew Green
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Publication number: 20230087893Abstract: A method of forming a photovoltaic device comprising a perovskite photovoltaic cell, particularly a method of forming a perovskite solar cell (PSC), is disclosed having a hole transport layer comprising an additive that may result in one or more of reduced formation of crystalline domains in the hole transport layer; reduced size of pinholes in the hole transport layer; improved dopant homogeneity and increased hydrophobicity of the hole transport layer. Also disclosed are PSCs so formed, showing one or more improved properties.Type: ApplicationFiled: February 22, 2021Publication date: March 23, 2023Inventors: Xiaojing Hao, Xu Liu, Martin Andrew Green, Ziheng Liu
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Patent number: 11322634Abstract: A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing materiaType: GrantFiled: June 21, 2017Date of Patent: May 3, 2022Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Xiaojing Hao, Fangyang Liu, Jialiang Huang, Chang Yan, Kaiwen Sun, Martin Andrew Green
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Publication number: 20210135028Abstract: Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, ? or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, ? or 0 includes an element not formally being from group VIII, VII, VI,V, IV, III,II, ? or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.Type: ApplicationFiled: February 15, 2019Publication date: May 6, 2021Inventors: Xiaojing Hao, Robert John Patterson, Shiyou Chen, Martin Andrew Green
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Publication number: 20200403110Abstract: The present disclosure provides a photovoltaic module comprising a photon absorbing material for absorbing electromagnetic radiation. The photon absorbing material comprises solar cells and a glass material. The photovoltaic module also comprises an anti-reflective coating that has anti-reflective properties in a first wavelength range and reflective properties in a second wavelength range. The anti-reflective coating is positioned over the glass material. The anti-reflective coating comprises a layered structure that has layers that together have an out-of-sequence or non-graded refractive index profile.Type: ApplicationFiled: February 27, 2019Publication date: December 24, 2020Inventors: Martin Andrew GREEN, Yajie Jessica JIANG, Mark KEEVERS, Nicholas EKINS-DAUKES, Zibo ZHOU
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Publication number: 20200403568Abstract: Disclosed is an assembly for mounting to a photovoltaic module. The photovoltaic module has a radiation receiving surface and a second surface opposite the radiation receiving surface. At least one of the radiation receiving surface and the second surfaces are also arranged to transmit radiation. A photon absorbing material is positioned between the first and second surfaces. The assembly comprises a cooling element configured to mount to the at least one of the radiation receiving surface and the second surface. The cooling element has a plurality of protrusions that are configured to increase a heat transfer coefficient of the photovoltaic module compared to a heat transfer coefficient that the photovoltaic module would have without the plurality of protrusions.Type: ApplicationFiled: February 27, 2019Publication date: December 24, 2020Inventors: Martin Andrew GREEN, Yajie Jessica JIANG, Mark KEEVERS, Nicholas EKINSDAUKES, Zibo ZHOU
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Publication number: 20200403567Abstract: The present disclosure provides a photovoltaic module, which comprises a photon absorbing material comprising a solar cell; The photovoltaic module also comprises a glass material positioned within a plane and being positioned over the photon absorbing material such that in use light is incident on the glass material and the glass material transmits light towards the photon absorbing material, the glass material having a front surface facing away from the photon absorbing material. The front surface of the glass material has a shape which is profiled such that the emittance of infrared light from the front surface of the glass material is increased compared to that of a flat front surface, the emittance of the infrared light being associated with absorbance of infrared light that is incident upon the front surface. A rear backing sheet of the photovoltaic module may have a shape that is profiled in a corresponding manner.Type: ApplicationFiled: February 27, 2019Publication date: December 24, 2020Inventors: Martin Andrew GREEN, Yajie Jessica JIANG, Mark KEEVERS, Nicholas EKINS-DAUKES, Zibo ZHOU
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Publication number: 20190207050Abstract: A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing materiaType: ApplicationFiled: June 21, 2017Publication date: July 4, 2019Inventors: Xiaojing HAO, Fangyang LIU, Jialiang HUANG, Chang YAN, Kaiwen SUN, Martin Andrew GREEN
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Patent number: 10115854Abstract: The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.Type: GrantFiled: September 4, 2015Date of Patent: October 30, 2018Assignee: NewSouth Innovations Pty LimitedInventors: Xiaojing Hao, Martin Andrew Green, Ziheng Liu, Wei Li, Anita Wing Yi Ho-Baillie
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Publication number: 20170244005Abstract: The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.Type: ApplicationFiled: September 4, 2015Publication date: August 24, 2017Inventors: Xiaojing Hao, Martin Andrew Green, Ziheng Liu, Wei Li, Anita Wing Yi Ho-Baillie
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Patent number: 9613814Abstract: A solar cell has a metal contact formed to electrically contact a surface of semiconductor material forming a photovoltaic junction. The solar cell includes a surface region or regions of heavily doped material and the contact comprises a contact metallisation formed over the heavily doped regions to make contact thereto. Surface keying features are located in the semiconductor material into which the metallisation extends to assist in attachment of the metallisation to the semiconductor material.Type: GrantFiled: February 24, 2010Date of Patent: April 4, 2017Assignee: NEWSOUTH INNOVATIONS PTY LIMITEDInventors: Alison Maree Wenham, Martin Andrew Green, Stuart Ross Wenham
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Publication number: 20160190377Abstract: The present disclosure provides a photovoltaic device that has a photon receiving surface and a first single homojunction silicon solar cell. The first single homojunction silicon solar cell comprises two doped silicon portions with opposite polarities and has a first bandgap. The photovoltaic device further comprises a second solar cell structure that has an absorber material with a Perovskite structure and has a second bandgap that is larger than the first bandgap. The photovoltaic device is arranged such that each of the first and second solar cells absorb a portion of the photons that are received by the photon receiving surface.Type: ApplicationFiled: August 6, 2014Publication date: June 30, 2016Applicant: NEWSOUTH INNOVATIONS PTY LIMITEDInventor: Martin Andrew Green
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Patent number: 8912430Abstract: A solar conversion assembly comprises: a) a type III-V multiple cell stack solar cell device b) a silicon solar cell device c) a band splitting device located relative to the type III-V solar cell device and the silicon solar cell device. The band splitting device splits light falling on the splitting device into a plurality of wavelength bands and directs a first of said bands to the type III-V solar cell device and the second of said bands to the silicon solar cell device.Type: GrantFiled: February 11, 2011Date of Patent: December 16, 2014Assignee: Newsouth Innovations Pty LimitedInventor: Martin Andrew Green
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Publication number: 20130056045Abstract: A solar conversion assembly comprises: a) a type III-V multiple cell stack solar cell device b) a silicon solar cell device c) a band splitting device located relative to the type III-V solar cell device and the silicon solar cell device. The band splitting device splits light falling on the splitting device into a plurality of wavelength bands and directs a first of said bands to the type III-V solar cell device and the second of said bands to the silicon solar cell device.Type: ApplicationFiled: February 11, 2011Publication date: March 7, 2013Inventor: Martin Andrew Green
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Publication number: 20120222737Abstract: A method of fabricating a hot carrier energy conversion structure, and a hot carrier energy conversion structure. The method comprises forming an energy selective contact ESC comprising a tunnelling layer; forming a carrier generation layer on the ESC; and forming a semiconductor contact without a tunnelling layer on the carrier generation layer.Type: ApplicationFiled: July 2, 2010Publication date: September 6, 2012Applicants: Toyota Jidosha Kabushiki Kaisha, NewSouth Innovations Pty LimitedInventors: Gavin John Conibeer, Santosh Shrestha, Dirk Konig, Martin Andrew Green, Tomonori Nagashima, Yasuhiko Takeda, Tadashi Ito, Tomoyoshi Motohiro
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Publication number: 20120132270Abstract: A solar cell has a metal contact formed to electrically contact a surface of semiconductor material forming a photo-voltaic junction. The solar cell includes a surface region or regions of heavily doped material and the contact comprises a contact metallisation formed over the heavily doped regions to make contact thereto. Surface keying features are located in the semiconductor material into which the metallisation extends to assist in attachment of the metallisation to the semiconductor material.Type: ApplicationFiled: February 24, 2010Publication date: May 31, 2012Inventors: Alison Maree Wenham, Martin Andrew Green, Stuart Ross Wenham
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Publication number: 20080251116Abstract: An artificial amorphous semiconductor material, and a junction made from the material, has a plurality of crystalline semiconductor material quantum dots substantially uniformly distributed and regularly spaced in three dimensions through a matrix of dielectric material or thin layers of dielectric materials. The material is formed by first forming a plurality of layers of dielectric material comprising a compound of a semiconducting material, and forming alternating layers as layers of stoichiometric dielectric material and layers of semiconductor rich dielectric material respectively. The material is then heated causing quantum dots to form in the semiconductor rich layers of dielectric material in a uniform and regularly spaced distribution in three dimensions through the dielectric material.Type: ApplicationFiled: April 29, 2005Publication date: October 16, 2008Inventor: Martin Andrew Green
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Patent number: 6624009Abstract: A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is plastic above this temperature while the silicon remains elastic, the glass is forced to conform to the shape defined by the silicon once this temperature is exceeded. This process relaxes any stresses which might otherwise be created in the glass or film, as long as the glass temperature is above the strain point. As the glass temperature is reduced back below the strain point, the glass becomes progressively more rigid and stresses will begin to build up in the film and glass. When cooled slowly, the stress in the film and the glass can be controlled by appropriate selection of a thermal expansion coefficient of the glass relative to that of silicon, particularly those with linear expansion coefficients in the range 4-10 ppm/° C.Type: GrantFiled: April 30, 1999Date of Patent: September 23, 2003Assignee: Pacific Solar Pty LimitedInventors: Martin Andrew Green, Zhengrong Shi, Paul Alan Basore, JingJia Ji
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Patent number: 6538195Abstract: A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.Type: GrantFiled: May 31, 2001Date of Patent: March 25, 2003Assignee: Pacific Solar Pty LimitedInventors: Zhengrong Shi, Stuart Ross Wenham, Martin Andrew Green, Paul Alan Basore, Jing Jia Ji
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Patent number: 6429037Abstract: A method of making contacts on solar cells is disclosed. The front surface (41) of a substrate (11) is coated with a dielectric or surface masking layer or layers (12) that contains dopants of the opposite polarity to those used in the surface of the substrate material (11). The dielectric layers or layers (12) not only acts as a diffusion source for forming the emitter for the underlying substrate (11) when heat treated, but also acts as a metallization mask during the subsequent electroless plating with solutions such as nickel and copper. The mask may be formed by laser scribing (14) which melts the layer or layers (12), thereby more heavily doping and exposing zones (15) where metallization is required.Type: GrantFiled: December 20, 2000Date of Patent: August 6, 2002Assignee: Unisearch LimitedInventors: Stuart Ross Wenham, Martin Andrew Green