Patents by Inventor Martin Andrew Green

Martin Andrew Green has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11881536
    Abstract: Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, ? or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, ? or 0 includes an element not formally being from group VIII, VII, VI, V, IV, III, II, ? or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: January 23, 2024
    Assignee: NewSouth Innovations Pty Limited
    Inventors: Xiaojing Hao, Robert John Patterson, Shiyou Chen, Martin Andrew Green
  • Publication number: 20230087893
    Abstract: A method of forming a photovoltaic device comprising a perovskite photovoltaic cell, particularly a method of forming a perovskite solar cell (PSC), is disclosed having a hole transport layer comprising an additive that may result in one or more of reduced formation of crystalline domains in the hole transport layer; reduced size of pinholes in the hole transport layer; improved dopant homogeneity and increased hydrophobicity of the hole transport layer. Also disclosed are PSCs so formed, showing one or more improved properties.
    Type: Application
    Filed: February 22, 2021
    Publication date: March 23, 2023
    Inventors: Xiaojing Hao, Xu Liu, Martin Andrew Green, Ziheng Liu
  • Patent number: 11322634
    Abstract: A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing materia
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: May 3, 2022
    Assignee: NEWSOUTH INNOVATIONS PTY LIMITED
    Inventors: Xiaojing Hao, Fangyang Liu, Jialiang Huang, Chang Yan, Kaiwen Sun, Martin Andrew Green
  • Publication number: 20210135028
    Abstract: Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, ? or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, ? or 0 includes an element not formally being from group VIII, VII, VI,V, IV, III,II, ? or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.
    Type: Application
    Filed: February 15, 2019
    Publication date: May 6, 2021
    Inventors: Xiaojing Hao, Robert John Patterson, Shiyou Chen, Martin Andrew Green
  • Publication number: 20200403110
    Abstract: The present disclosure provides a photovoltaic module comprising a photon absorbing material for absorbing electromagnetic radiation. The photon absorbing material comprises solar cells and a glass material. The photovoltaic module also comprises an anti-reflective coating that has anti-reflective properties in a first wavelength range and reflective properties in a second wavelength range. The anti-reflective coating is positioned over the glass material. The anti-reflective coating comprises a layered structure that has layers that together have an out-of-sequence or non-graded refractive index profile.
    Type: Application
    Filed: February 27, 2019
    Publication date: December 24, 2020
    Inventors: Martin Andrew GREEN, Yajie Jessica JIANG, Mark KEEVERS, Nicholas EKINS-DAUKES, Zibo ZHOU
  • Publication number: 20200403568
    Abstract: Disclosed is an assembly for mounting to a photovoltaic module. The photovoltaic module has a radiation receiving surface and a second surface opposite the radiation receiving surface. At least one of the radiation receiving surface and the second surfaces are also arranged to transmit radiation. A photon absorbing material is positioned between the first and second surfaces. The assembly comprises a cooling element configured to mount to the at least one of the radiation receiving surface and the second surface. The cooling element has a plurality of protrusions that are configured to increase a heat transfer coefficient of the photovoltaic module compared to a heat transfer coefficient that the photovoltaic module would have without the plurality of protrusions.
    Type: Application
    Filed: February 27, 2019
    Publication date: December 24, 2020
    Inventors: Martin Andrew GREEN, Yajie Jessica JIANG, Mark KEEVERS, Nicholas EKINSDAUKES, Zibo ZHOU
  • Publication number: 20200403567
    Abstract: The present disclosure provides a photovoltaic module, which comprises a photon absorbing material comprising a solar cell; The photovoltaic module also comprises a glass material positioned within a plane and being positioned over the photon absorbing material such that in use light is incident on the glass material and the glass material transmits light towards the photon absorbing material, the glass material having a front surface facing away from the photon absorbing material. The front surface of the glass material has a shape which is profiled such that the emittance of infrared light from the front surface of the glass material is increased compared to that of a flat front surface, the emittance of the infrared light being associated with absorbance of infrared light that is incident upon the front surface. A rear backing sheet of the photovoltaic module may have a shape that is profiled in a corresponding manner.
    Type: Application
    Filed: February 27, 2019
    Publication date: December 24, 2020
    Inventors: Martin Andrew GREEN, Yajie Jessica JIANG, Mark KEEVERS, Nicholas EKINS-DAUKES, Zibo ZHOU
  • Publication number: 20190207050
    Abstract: A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing materia
    Type: Application
    Filed: June 21, 2017
    Publication date: July 4, 2019
    Inventors: Xiaojing HAO, Fangyang LIU, Jialiang HUANG, Chang YAN, Kaiwen SUN, Martin Andrew GREEN
  • Patent number: 10115854
    Abstract: The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: October 30, 2018
    Assignee: NewSouth Innovations Pty Limited
    Inventors: Xiaojing Hao, Martin Andrew Green, Ziheng Liu, Wei Li, Anita Wing Yi Ho-Baillie
  • Publication number: 20170244005
    Abstract: The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.
    Type: Application
    Filed: September 4, 2015
    Publication date: August 24, 2017
    Inventors: Xiaojing Hao, Martin Andrew Green, Ziheng Liu, Wei Li, Anita Wing Yi Ho-Baillie
  • Patent number: 9613814
    Abstract: A solar cell has a metal contact formed to electrically contact a surface of semiconductor material forming a photovoltaic junction. The solar cell includes a surface region or regions of heavily doped material and the contact comprises a contact metallisation formed over the heavily doped regions to make contact thereto. Surface keying features are located in the semiconductor material into which the metallisation extends to assist in attachment of the metallisation to the semiconductor material.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: April 4, 2017
    Assignee: NEWSOUTH INNOVATIONS PTY LIMITED
    Inventors: Alison Maree Wenham, Martin Andrew Green, Stuart Ross Wenham
  • Publication number: 20160190377
    Abstract: The present disclosure provides a photovoltaic device that has a photon receiving surface and a first single homojunction silicon solar cell. The first single homojunction silicon solar cell comprises two doped silicon portions with opposite polarities and has a first bandgap. The photovoltaic device further comprises a second solar cell structure that has an absorber material with a Perovskite structure and has a second bandgap that is larger than the first bandgap. The photovoltaic device is arranged such that each of the first and second solar cells absorb a portion of the photons that are received by the photon receiving surface.
    Type: Application
    Filed: August 6, 2014
    Publication date: June 30, 2016
    Applicant: NEWSOUTH INNOVATIONS PTY LIMITED
    Inventor: Martin Andrew Green
  • Patent number: 8912430
    Abstract: A solar conversion assembly comprises: a) a type III-V multiple cell stack solar cell device b) a silicon solar cell device c) a band splitting device located relative to the type III-V solar cell device and the silicon solar cell device. The band splitting device splits light falling on the splitting device into a plurality of wavelength bands and directs a first of said bands to the type III-V solar cell device and the second of said bands to the silicon solar cell device.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: December 16, 2014
    Assignee: Newsouth Innovations Pty Limited
    Inventor: Martin Andrew Green
  • Publication number: 20130056045
    Abstract: A solar conversion assembly comprises: a) a type III-V multiple cell stack solar cell device b) a silicon solar cell device c) a band splitting device located relative to the type III-V solar cell device and the silicon solar cell device. The band splitting device splits light falling on the splitting device into a plurality of wavelength bands and directs a first of said bands to the type III-V solar cell device and the second of said bands to the silicon solar cell device.
    Type: Application
    Filed: February 11, 2011
    Publication date: March 7, 2013
    Inventor: Martin Andrew Green
  • Publication number: 20120222737
    Abstract: A method of fabricating a hot carrier energy conversion structure, and a hot carrier energy conversion structure. The method comprises forming an energy selective contact ESC comprising a tunnelling layer; forming a carrier generation layer on the ESC; and forming a semiconductor contact without a tunnelling layer on the carrier generation layer.
    Type: Application
    Filed: July 2, 2010
    Publication date: September 6, 2012
    Applicants: Toyota Jidosha Kabushiki Kaisha, NewSouth Innovations Pty Limited
    Inventors: Gavin John Conibeer, Santosh Shrestha, Dirk Konig, Martin Andrew Green, Tomonori Nagashima, Yasuhiko Takeda, Tadashi Ito, Tomoyoshi Motohiro
  • Publication number: 20120132270
    Abstract: A solar cell has a metal contact formed to electrically contact a surface of semiconductor material forming a photo-voltaic junction. The solar cell includes a surface region or regions of heavily doped material and the contact comprises a contact metallisation formed over the heavily doped regions to make contact thereto. Surface keying features are located in the semiconductor material into which the metallisation extends to assist in attachment of the metallisation to the semiconductor material.
    Type: Application
    Filed: February 24, 2010
    Publication date: May 31, 2012
    Inventors: Alison Maree Wenham, Martin Andrew Green, Stuart Ross Wenham
  • Publication number: 20080251116
    Abstract: An artificial amorphous semiconductor material, and a junction made from the material, has a plurality of crystalline semiconductor material quantum dots substantially uniformly distributed and regularly spaced in three dimensions through a matrix of dielectric material or thin layers of dielectric materials. The material is formed by first forming a plurality of layers of dielectric material comprising a compound of a semiconducting material, and forming alternating layers as layers of stoichiometric dielectric material and layers of semiconductor rich dielectric material respectively. The material is then heated causing quantum dots to form in the semiconductor rich layers of dielectric material in a uniform and regularly spaced distribution in three dimensions through the dielectric material.
    Type: Application
    Filed: April 29, 2005
    Publication date: October 16, 2008
    Inventor: Martin Andrew Green
  • Patent number: 6624009
    Abstract: A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is plastic above this temperature while the silicon remains elastic, the glass is forced to conform to the shape defined by the silicon once this temperature is exceeded. This process relaxes any stresses which might otherwise be created in the glass or film, as long as the glass temperature is above the strain point. As the glass temperature is reduced back below the strain point, the glass becomes progressively more rigid and stresses will begin to build up in the film and glass. When cooled slowly, the stress in the film and the glass can be controlled by appropriate selection of a thermal expansion coefficient of the glass relative to that of silicon, particularly those with linear expansion coefficients in the range 4-10 ppm/° C.
    Type: Grant
    Filed: April 30, 1999
    Date of Patent: September 23, 2003
    Assignee: Pacific Solar Pty Limited
    Inventors: Martin Andrew Green, Zhengrong Shi, Paul Alan Basore, JingJia Ji
  • Patent number: 6538195
    Abstract: A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: March 25, 2003
    Assignee: Pacific Solar Pty Limited
    Inventors: Zhengrong Shi, Stuart Ross Wenham, Martin Andrew Green, Paul Alan Basore, Jing Jia Ji
  • Patent number: 6429037
    Abstract: A method of making contacts on solar cells is disclosed. The front surface (41) of a substrate (11) is coated with a dielectric or surface masking layer or layers (12) that contains dopants of the opposite polarity to those used in the surface of the substrate material (11). The dielectric layers or layers (12) not only acts as a diffusion source for forming the emitter for the underlying substrate (11) when heat treated, but also acts as a metallization mask during the subsequent electroless plating with solutions such as nickel and copper. The mask may be formed by laser scribing (14) which melts the layer or layers (12), thereby more heavily doping and exposing zones (15) where metallization is required.
    Type: Grant
    Filed: December 20, 2000
    Date of Patent: August 6, 2002
    Assignee: Unisearch Limited
    Inventors: Stuart Ross Wenham, Martin Andrew Green