Patents by Inventor Martin Burkhardt

Martin Burkhardt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9551924
    Abstract: This invention relates to a structure for fixing phase effects on EUV mask which contains a repeating pattern with an assist feature, or a pattern with two different sized features in close proximity. The EUV mask with the repeating pattern is capable of printing a group of trenches on a photoresist layer. The invention also relates to a method of fabricating an EUV mask for fixing phase effects. The EUV mask contains an absorber layer over the multilayer reflector, and the absorber layer is patterned to form a mask pattern which contains absorptive regions and reflective regions. The absorber is in the absorptive regions, and a phase shifter is deposited at least in the whole reflective regions of the mask pattern to a thickness capable of correcting phase effects. The phase shifter has an index of refraction value is about equal to or less than that of the absorber. The thickness of the phase shifter is determined by simulation.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: January 24, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Martin Burkhardt, Emily Elizabeth Fisch Gallagher
  • Publication number: 20160238939
    Abstract: This invention relates to a method of obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature. The invention also relates to an EUV mask with a special focus test target for monitoring focus in EUV lithography, and a method of fabricating this EUV mask by designing the special focus test target. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing an EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 18, 2016
    Inventors: Timothy Allan Brunner, Martin Burkhardt
  • Publication number: 20160238924
    Abstract: This invention relates to a structure for fixing phase effects on EUV mask which contains a repeating pattern with an assist feature, or a pattern with two different sized features in close proximity. The EUV mask with the repeating pattern is capable of printing a group of trenches on a photoresist layer. The invention also relates to a method of fabricating an EUV mask for fixing phase effects. The EUV mask contains an absorber layer over the multilayer reflector, and the absorber layer is patterned to form a mask pattern which contains absorptive regions and reflective regions. The absorber is in the absorptive regions, and a phase shifter is deposited at least in the whole reflective regions of the mask pattern to a thickness capable of correcting phase effects. The phase shifter has an index of refraction value is about equal to or less than that of the absorber. The thickness of the phase shifter is determined by simulation.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 18, 2016
    Inventors: Martin Burkhardt, Emily Elizabeth Fisch Gallagher
  • Patent number: 9261793
    Abstract: A pupil filter can be designed for any combination of an illumination lens and for various types of lithographic features. The pupil filter can be placed at the pupil plane of a projection optics system. For any given illumination lens providing a pupil fill within a pupil lens, a lithographic mask can be designed for the purpose of printing a one-dimensional array of line and space features or for the purpose of printing a two-dimensional array of contact holes by blocking areas, for each pixel in the pupil fill, the corresponding pixel and diffraction order pixels in the pupil lens unless +1 or ?1 diffraction order pixels fall within the area of the numerical aperture. For the purpose of frequency doubling, the pupil fill area is blocked.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: February 16, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Gregory R. McIntyre, Martin Burkhardt
  • Patent number: 9058997
    Abstract: Methods of multiple exposure in the fields of deep ultraviolet photolithography, next generation lithography, and semiconductor fabrication comprise a spin-castable methodology for enabling multiple patterning by completing a standard lithography process for the first exposure, followed by spin casting an etch selective overcoat layer, applying a second photoresist, and subsequent lithography. Utilizing the etch selectivity of each layer, provides a cost-effective, high resolution patterning technique. The invention comprises a number of double or multiple patterning techniques, some aimed at achieving resolution benefits, as well as others that achieve cost savings, or both resolution and cost savings. These techniques include, but are not limited to, pitch splitting techniques, pattern decomposition techniques, and dual damascene structures.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: June 16, 2015
    Assignee: International Business Machines Corporation
    Inventors: Martin Burkhardt, Sean D. Burns, Matthew E. Colburn
  • Patent number: 8927198
    Abstract: A two-dimensional dense array of contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque lines. The openings in the quadrupole illumination lens are aligned along the perpendicular directions of the opaque lines. Discrete contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque subresolution assist features and discrete opaque cross patterns. Alternately, a two-dimensional array of contact holes can be printed on a negative photoresist employing a quadrupole illumination lens and a checkerboard pattern of openings. The openings in the quadrupole illumination lens are in diagonal directions.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: January 6, 2015
    Assignee: International Business Machines Corporation
    Inventors: Martin Burkhardt, Yongan Xu
  • Publication number: 20140199615
    Abstract: A two-dimensional dense array of contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque lines. The openings in the quadrupole illumination lens are aligned along the perpendicular directions of the opaque lines. Discrete contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque subresolution assist features and discrete opaque cross patterns. Alternately, a two-dimensional array of contact holes can be printed on a negative photoresist employing a quadrupole illumination lens and a checkerboard pattern of openings. The openings in the quadrupole illumination lens are in diagonal directions.
    Type: Application
    Filed: January 15, 2013
    Publication date: July 17, 2014
    Applicant: International Business Machines Corporation
    Inventors: Martin Burkhardt, Yongan Xu
  • Publication number: 20140078479
    Abstract: A pupil filter can be designed for any combination of an illumination lens and for various types of lithographic features. The pupil filter can be placed at the pupil plane of a projection optics system. For any given illumination lens providing a pupil fill within a pupil lens, a lithographic mask can be designed for the purpose of printing a one-dimensional array of line and space features or for the purpose of printing a two-dimensional array of contact holes by blocking areas, for each pixel in the pupil fill, the corresponding pixel and diffraction order pixels in the pupil lens unless +1 or ?1 diffraction order pixels fall within the area of the numerical aperture. For the purpose of frequency doubling, the pupil fill area is blocked.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Gregory R. McIntyre, Martin Burkhardt
  • Patent number: 8507346
    Abstract: A method of forming a semiconductor device having a substrate, an active region and an inactive region includes: forming a hardmask layer over the substrate; transferring a first pattern into the hardmask layer in the active region of the semiconductor device; forming one or more fills in the inactive region; forming a cut-away hole within, covering, or partially covering, the one or more fills to expose a portion of the hardmask layer, the exposed portion being within the one or more fills; and exposing the hardmask layer to an etchant to divide the first pattern into a second pattern including at least two separate elements.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: August 13, 2013
    Assignee: International Business Machines Corporation
    Inventors: Martin Burkhardt, Matthew E. Colburn, Allen H. Gabor, Oleg Gluschenkov, Scott D. Halle, Howard S. Landis, Helen Wang
  • Publication number: 20120214311
    Abstract: Methods of multiple exposure in the fields of deep ultraviolet photolithography, next generation lithography, and semiconductor fabrication comprise a spin-castable methodology for enabling multiple patterning by completing a standard lithography process for the first exposure, followed by spin casting an etch selective overcoat layer, applying a second photoresist, and subsequent lithography. Utilizing the etch selectivity of each layer, provides a cost-effective, high resolution patterning technique. The invention comprises a number of double or multiple patterning techniques, some aimed at achieving resolution benefits, as well as others that achieve cost savings, or both resolution and cost savings. These techniques include, but are not limited to, pitch splitting techniques, pattern decomposition techniques, and dual damascene structures.
    Type: Application
    Filed: April 18, 2012
    Publication date: August 23, 2012
    Applicant: International Business Machines Corporation
    Inventors: Martin Burkhardt, Sean D. Burns, Matthew E. Colburn
  • Publication number: 20120126294
    Abstract: A method of forming a semiconductor device having a substrate, an active region and an inactive region includes: forming a hardmask layer over the substrate; transferring a first pattern into the hardmask layer in the active region of the semiconductor device; forming one or more fills in the inactive region; forming a cut-away hole within, covering, or partially covering, the one or more fills to expose a portion of the hardmask layer, the exposed portion being within the one or more fills; and exposing the hardmask layer to an etchant to divide the first pattern into a second pattern including at least two separate elements.
    Type: Application
    Filed: November 18, 2010
    Publication date: May 24, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Martin Burkhardt, Matthew E. Colburn, Allen H. Gabor, Oleg Gluschenkov, Scott D. Halle, Howard S. Landis, Helen Wang
  • Publication number: 20090104566
    Abstract: Methods of multiple exposure in the fields of deep ultraviolet photolithography, next generation lithography, and semiconductor fabrication comprise a spin-castable methodology for enabling multiple patterning by completing a standard lithography process for the first exposure, followed by spin casting an etch selective overcoat layer, applying a second photoresist, and subsequent lithography. Utilizing the etch selectivity of each layer, provides a cost-effective, high resolution patterning technique. The invention comprises a number of double or multiple patterning techniques, some aimed at achieving resolution benefits, as well as others that achieve cost savings, or both resolution and cost savings. These techniques include, but are not limited to, pitch splitting techniques, pattern decomposition techniques, and dual damascene structures.
    Type: Application
    Filed: October 19, 2007
    Publication date: April 23, 2009
    Applicant: International Business Machines Corporation
    Inventors: Martin Burkhardt, Sean D. Burns, Matthew E. Colburn
  • Publication number: 20080320435
    Abstract: A method for fabricating a mask used to make integrated circuits is provided using an improved OPC process whereby a pre-fracturing OPC process is performed on the target design of the integrated circuit. The pre-fractured OPC design is then fractured and a post-fracturing OPC process performed to make the final mask. Either rule-based OPC or model-based OPC processes can be used for both of the OPC steps or each step can be either side-based or model-based OPC.
    Type: Application
    Filed: July 10, 2008
    Publication date: December 25, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Martin Burkhardt, Nakgeuon Seong
  • Publication number: 20080168419
    Abstract: A method for fabricating a mask used to make integrated circuits is provided using an improved OPC process whereby a pre-fracturing OPC process is performed on the target design of the integrated circuit. The pre-fractured OPC design is then fractured and a post-fracturing OPC process performed to make the final mask. Either rule-based OPC or model-based OPC processes can be used for both of the OPC steps or each step can be either side-based or model-based OPC.
    Type: Application
    Filed: January 4, 2007
    Publication date: July 10, 2008
    Applicant: International Business Machines Corporation
    Inventors: MARTIN BURKHARDT, Nakgeuon Seong
  • Patent number: 7141656
    Abstract: The present invention relates to novel complexes of major histocompability complex (MHC) molecules and uses of such complexes. In one aspect, the invention relates to loaded MHC complexes that include at least one MHC molecule with a peptide-binding groove and a presenting peptide non-covalently linked to the MHC protein. In another aspect, the invention features single chain MHC class II peptide fusion complexes with a presenting peptide covalently linked to the peptide binding grove of the complex. MHC complexes of the invention are useful for a variety of applications including: 1) in vitro screens for identification and isolation of peptides that modulate activity of selected T cells, including peptides that are T cell receptor antagonists and partial agonists, and 2) methods for suppressing or inducing an immune response in a mammal.
    Type: Grant
    Filed: May 3, 2001
    Date of Patent: November 28, 2006
    Assignee: Altor Bioscience Corporation
    Inventors: Peter R. Rhode, Jin-An Jiao, Martin Burkhardt, Hing C. Wong
  • Patent number: 7074905
    Abstract: The present invention relates to novel complexes of major histocompability complex (MHC) molecules and uses of such complexes. In one aspect, the invention relates to single chain MHC class II complexes that include a class II ?2 chain modification, e.g., deletion of essentially the entire class II ?2 chain. In another aspect, the invention features single chain MHC class II which comprise an immunoglobin constant chain or fragment. Further provided are polyspecific MHC complexes comprising at least one single chain MHC class II molecule. MHC complexes of the invention are useful for a variety of applications including: 1) in vitro screens for identification and isolation of peptides that modulate activity of selected T cells, including peptides that are T cell receptor antagonists and partial agonists, and 2) methods for suppressing or inducing an immune response in a mammal.
    Type: Grant
    Filed: January 19, 2001
    Date of Patent: July 11, 2006
    Assignee: Altor BioScience Corporation
    Inventors: Peter R. Rhode, Jorge Acevedo, Martin Burkhardt, Jin-an Jiao, Hing C. Wong
  • Patent number: 6964032
    Abstract: A method of designing a mask for imaging an integrated circuit (IC) design layout is provided to efficiently configure subresolution assist features (SRAFs) corresponding to an optimally configured annular illumination source of a lithographic projection system. A critical pitch is identified for the IC design, and optimal inner and outer radial coordinates of an annular illumination source are determined so that the resulting image projected through the mask will be optimized for the full range of pitches in the design layout. A relationship is provided for determining an optimal inner radius and outer radius for the annular illumination source. The number and placement of SRAFs are added to the mask design so that the resulting range of pitches substantially correspond to the critical pitch. The method of configuring SRAFs so that the image will have optimal characteristics, such as good contrast and good depth of focus, is fast.
    Type: Grant
    Filed: February 28, 2003
    Date of Patent: November 8, 2005
    Assignee: International Business Machines Corporation
    Inventors: Lars W. Liebmann, Allen H. Gabor, Ronald L. Gordon, Carlos A. Fonseca, Martin Burkhardt
  • Patent number: 6940583
    Abstract: A method of projecting a pattern from a mask onto a substrate comprises providing an energy source, a substrate, and a mask containing a pattern of features to be projected onto the substrate, and projecting an energy beam from the energy source though the mask toward the substrate to create a projected mask pattern image. The projected mask pattern image is created by zeroth and higher orders of the energy beam. The method then includes diffracting zeroth order beams of the projected mask pattern image to an extent that prevents the zeroth order beams from reaching the substrate, while permitting higher order beams of the projected mask pattern image to reach the substrate. Preferably, the zeroth order beams of the projected mask pattern image are diffracted at an obtuse angle.
    Type: Grant
    Filed: July 28, 2003
    Date of Patent: September 6, 2005
    Assignees: International Business Machines Corporation, Infineon Technologies North America Corp.
    Inventors: Shahid Butt, Martin Burkhardt
  • Publication number: 20050024618
    Abstract: A method of projecting a pattern from a mask onto a substrate comprises providing an energy source, a substrate, and a mask containing a pattern of features to be projected onto the substrate, and projecting an energy beam from the energy source though the mask toward the substrate to create a projected mask pattern image. The projected mask pattern image is created by zeroth and higher orders of the energy beam. The method then includes diffracting zeroth order beams of the projected mask pattern image to an extent that prevents the zeroth order beams from reaching the substrate, while permitting higher order beams of the projected mask pattern image to reach the substrate. Preferably, the zeroth order beams of the projected mask pattern image are diffracted at an obtuse angle.
    Type: Application
    Filed: July 28, 2003
    Publication date: February 3, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shahid Butt, Martin Burkhardt
  • Publication number: 20040253632
    Abstract: Disclosed are methods for identifying compounds that modulate an immune complex that includes a T cell receptor (TCR) and a major histocompatibility complex (MHC) antigen. The invention has many useful applications including providing high throughput screening assays for detecting compositions that can modulate an immune response.
    Type: Application
    Filed: May 16, 2001
    Publication date: December 16, 2004
    Applicant: Sunol Molecular Corporation
    Inventors: Peter R. Rhode, Vaughan Wittman, Jon A. Weidanz, Martin Burkhardt, Kimberlyn F. Card, Rony Tal, Jorge Acevedo, Hing C. Wong