Patents by Inventor Martin Henning Vielemeyer

Martin Henning Vielemeyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200203525
    Abstract: A transistor device with a gate electrode in a vertical gate trench is described. The gate electrode includes a silicon gate region and a metal inlay region. The silicon gate region forms at least a section of a sidewall of the gate electrode. The metal inlay region extends up from a lower end of the gate electrode.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Inventors: Robert Paul Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani, Harsh Naik, Martin Poelzl, Martin Henning Vielemeyer, Britta Wutte
  • Publication number: 20200091300
    Abstract: A transistor device includes, in a semiconductor body, a drift region, a body region, and a source region separated from the drift region by the body region and connected to a source node. The transistor device further includes a gate electrode dielectrically insulated from the body region by a gate dielectric, and a field electrode structure. The field electrode structure includes: a first field electrode connected to the source node and dielectrically insulated from the drift region by a first field electrode dielectric; a second field electrode dielectrically insulated from the drift region by a second field electrode dielectric; and a coupling circuit connected between the second field electrode and the source node and configured to connect the second field electrode to the source node dependent on a voltage between the source node and the second field electrode.
    Type: Application
    Filed: September 16, 2019
    Publication date: March 19, 2020
    Inventors: Franz Hirler, Cesar Augusto Braz, Gerhard Noebauer, Martin Henning Vielemeyer
  • Patent number: 9899488
    Abstract: A semiconductor device includes a semiconductor body having a front side and a back side, and a trench included in the semiconductor body. The trench extends into the semiconductor body along an extension direction that points from the front side to the back side. The trench includes an electrode structure and an insulation structure, the insulation structure insulating the electrode structure from the semiconductor body and the electrode structure being arranged for receiving an electric signal from external of the semiconductor device. The electrode structure includes a first electrode and a second electrode in contact with the first electrode, the first electrode including a first electrode material and the second electrode including a second electrode material different from the first electrode material. The first electrode extends further along the extension direction as compared to the second electrode.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: February 20, 2018
    Assignee: Infineon Technologies Austria AG
    Inventors: Li Juin Yip, Martin Henning Vielemeyer
  • Patent number: 9799729
    Abstract: A method of manufacturing a semiconductor device includes: forming field electrode structures extending in a direction vertical to a first surface in a semiconductor body; forming cell mesas from portions of the semiconductor body between the field electrode structures, including body zones forming first pn junctions with a drift zone; forming gate structures between the field electrode structures and configured to control a current flow through the body zones; and forming auxiliary diode structures with a forward voltage lower than the first pn junctions and electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: October 24, 2017
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Oliver Blank, Franz Hirler, Martin Henning Vielemeyer
  • Publication number: 20170133474
    Abstract: A semiconductor device includes a semiconductor body having a front side and a back side, and a trench included in the semiconductor body. The trench extends into the semiconductor body along an extension direction that points from the front side to the back side. The trench includes an electrode structure and an insulation structure, the insulation structure insulating the electrode structure from the semiconductor body and the electrode structure being arranged for receiving an electric signal from external of the semiconductor device. The electrode structure includes a first electrode and a second electrode in contact with the first electrode, the first electrode including a first electrode material and the second electrode including a second electrode material different from the first electrode material. The first electrode extends further along the extension direction as compared to the second electrode.
    Type: Application
    Filed: January 25, 2017
    Publication date: May 11, 2017
    Inventors: Li Juin Yip, Martin Henning Vielemeyer
  • Publication number: 20170125520
    Abstract: A method of manufacturing a semiconductor device includes: forming field electrode structures extending in a direction vertical to a first surface in a semiconductor body; forming cell mesas from portions of the semiconductor body between the field electrode structures, including body zones forming first pn junctions with a drift zone; forming gate structures between the field electrode structures and configured to control a current flow through the body zones; and forming auxiliary diode structures with a forward voltage lower than the first pn junctions and electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas.
    Type: Application
    Filed: January 6, 2017
    Publication date: May 4, 2017
    Inventors: Ralf Siemieniec, Oliver Blank, Franz Hirler, Martin Henning Vielemeyer
  • Publication number: 20170092777
    Abstract: In an embodiment, a semiconductor device includes a substrate, a plurality of columnar drift zones including a group III-nitride having a first conductivity type and a plurality of charge compensation structures. The columnar drift zones and the compensation structures are positioned alternately on a surface of the substrate.
    Type: Application
    Filed: September 28, 2016
    Publication date: March 30, 2017
    Inventor: Martin Henning Vielemeyer
  • Patent number: 9590062
    Abstract: A semiconductor device is produced by: creating an opening in a mask formed on a semiconductor body; creating, underneath the opening, a trench in the semiconductor body which has a side wall and a trench bottom; creating, while the mask is on the semiconductor body, an insulating layer covering the trench bottom and the side wall; depositing a spacer layer including a first electrode material on the insulating layer; removing the spacer layer from at least a portion of the insulating layer that covers the trench bottom; filling at least a portion of the trench with an insulating material; removing the part of the insulating material laterally confined by the spacer layer so as to leave an insulating block in the trench; and filling at least a portion of the trench with a second electrode material so as to form an electrode within the trench.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: March 7, 2017
    Assignee: Infineon Technologies Austria AG
    Inventors: Li Juin Yip, Martin Henning Vielemeyer
  • Patent number: 9543386
    Abstract: A semiconductor device includes field electrode structures extending in a direction vertical to a first surface in a semiconductor body. Cell mesas are formed from portions of the semiconductor body between the field electrode structures and include body zones that form first pn junctions with a drift zone. Gate structures between the field electrode structures control a current flow through the body zones. Auxiliary diode structures with a forward voltage lower than the first pn junctions are electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: January 10, 2017
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Oliver Blank, Franz Hirler, Martin Henning Vielemeyer
  • Publication number: 20160240621
    Abstract: A semiconductor device is produced by: creating an opening in a mask formed on a semiconductor body; creating, underneath the opening, a trench in the semiconductor body which has a side wall and a trench bottom; creating, while the mask is on the semiconductor body, an insulating layer covering the trench bottom and the side wall; depositing a spacer layer including a first electrode material on the insulating layer; removing the spacer layer from at least a portion of the insulating layer that covers the trench bottom; filling at least a portion of the trench with an insulating material; removing the part of the insulating material laterally confined by the spacer layer so as to leave an insulating block in the trench; and filling at least a portion of the trench with a second electrode material so as to form an electrode within the trench.
    Type: Application
    Filed: February 15, 2016
    Publication date: August 18, 2016
    Inventors: Li Juin Yip, Martin Henning Vielemeyer
  • Publication number: 20160079238
    Abstract: A semiconductor device includes field electrode structures extending in a direction vertical to a first surface in a semiconductor body. Cell mesas are formed from portions of the semiconductor body between the field electrode structures and include body zones that form first pn junctions with a drift zone. Gate structures between the field electrode structures control a current flow through the body zones. Auxiliary diode structures with a forward voltage lower than the first pn junctions are electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas.
    Type: Application
    Filed: September 9, 2015
    Publication date: March 17, 2016
    Inventors: Ralf Siemieniec, Oliver Blank, Franz Hirler, Martin Henning Vielemeyer
  • Patent number: 8088660
    Abstract: A method for producing an electrode in a semiconductor layer includes providing a substrate with a first surface and a second surface, forming a first trench having sidewalls and extending into the substrate from the first surface and forming a plug in the first trench. The method further includes reducing a thickness of the semiconductor substrate by removing semiconductor material beginning at the first surface so as to at least partially uncover sidewalls of the plug and forming a semiconductor layer on the semiconductor substrate, the semiconductor layer at least partially covering the uncovered sidewalls of the plug, and having an upper surface.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: January 3, 2012
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Martin Henning Vielemeyer, Oliver Blank