Abstract: A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Abstract: A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Abstract: The present invention provides a method of manufacturing a semiconductor device comprising, providing a semiconductor substrate, forming a substantially-hydroxylated SiOxHy layer on the semiconductor substrate in a presence of oxygen and hydrogen, and forming a metallic oxide, high-K dielectric layer on the substantially-hydroxylated SiOxHy layer. The substantially-hydroxylated SiOxHy layer has a surface concentration of hydroxyl (OH) species equal to or greater than about 3×1014 hydroxyl per cm2.

Abstract: A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Abstract: A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

Abstract: A process for forming a silicon oxynitride layer in an N.sub.2 atmosphere is disclosed. The silicon oxynitride layer is formed by heating a silicon substrate in an N.sub.2 atmosphere for a period of time that is sufficient to form a nitrided layer with a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 therein. Afterward, the substrate is further oxidized in an oxygen containing atmosphere for a period of time sufficient to form a silicon oxynitride layer on the substrate with a thickness of at least about 1 nm and a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 on the wafer.

Abstract: A wafer holder for maintaining a semiconductor wafer at a constant temperature during film deposition is disclosed. The wafer holder is configured to have one or more quartz arms. Affixed to each arm is at least one quartz support, whose top end is adapted for holding the semiconductor wafer. The top end of each support is tapered to have a diameter smaller than that of the quartz support and is optionally tapered to a point. A thermal mass element is optionally supported on the arms of the wafer holder, to keep uniform, the temperature at the perimeter of the wafer with respect to the rest of the semiconductor wafer during a material layer deposition. Also, a quartz backstop is optionally attached to each support arm to keep the semiconductor wafer positioned on top of the quartz supports when the wafer holder is rotated.

Abstract: The present invention is directed to a process for fabricating a semiconductor integrated circuit device, and specifically, a process for cleaning a silicon substrate before gate silicon dioxide is formed on the silicon substrate. The gate silicon dioxide is used to form transistor gates. The process of the present invention provides a silicon/silicon dioxide interface and the bulk silicon dioxide with advantageous electrical properties. In the present process, the silicon substrate is first subjected to a stream of hydrofluoric acid (HF) vapor. The vapor HF stream is a mixture of anhydrous HF, methanol, and nitrogen. Following this, the substrate is subjected to gaseous chlorine that has been irradiated with broad band UV radiation. After the substrate has been cleaned according to the present process, a layer of silicon dioxide is grown thereon using conventional techniques such as rapid thermal oxidation (RTO).