Patents by Inventor Martin P. Lepselter

Martin P. Lepselter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040227463
    Abstract: An improved plasma display of the type formed on a single side of a first substrate has a substrate with magnetic or ferromagnetic properties and an insulating layer disposed on its surface. As an example, the display can comprise a steel substrate having a porcelain enamel coating. The porcelain enamel forms a thin, hard, transparent and smooth coating on the steel while not disturbing the magnetic properties of the first substrate. The magnetic properties of the first substrate serve to align and affix to the substrate crossing sets of conductors that define picture elements of the display, thus reducing the cost and time associated with accurately aligning the sets of conductors. The porcelain enamel coating prevents short circuits that would otherwise occur between the crossing conductors and the supporting substrate.
    Type: Application
    Filed: May 15, 2003
    Publication date: November 18, 2004
    Inventor: Martin P. Lepselter
  • Publication number: 20040217303
    Abstract: Space charges of electrons which repel one another near masks in electron beam exposure machines are reduced by bleeding gas into the vicinity of the apertures in the mask and pumping the gas out from the direction electron travel.
    Type: Application
    Filed: October 20, 2003
    Publication date: November 4, 2004
    Inventor: Martin P. Lepselter
  • Patent number: 6635888
    Abstract: Space charges of electrons which repel one another near masks in electron beam exposure machines are reduced by bleeding gas into the vicinity of the apertures in the mask and pumping the gas out from the direction electron travel.
    Type: Grant
    Filed: January 2, 1998
    Date of Patent: October 21, 2003
    Inventor: Martin P. Lepselter
  • Patent number: 5990620
    Abstract: A miniature high resolution plasma display suitable for integration on a semiconductor chip in combination with other circuitry is comprised of two crossed sets of conductors which are arranged on a first substrate to form an array of crosspoints. The two conductors at each crosspoint are a preselected distance apart and separated by a hollow cavity. An array of vertical tubes in a second substrate is spaced so as to correspond to the array of crosspoints. The second substrate is supported in alignment with the first so that the open end of the tubes oppose the cavity at each crosspoint. The tubes and cavities are filled with a pressurized gas and the assembly is sealed with a transparent, electrically conducting coverplate. When a voltage greater than or equal to the Paschen minimum firing voltage is applied across the cavity at a crosspoint, a plasma is created. Ions in the plasma spread from the cavity into the tube in response to a voltage that is applied to the cover plate.
    Type: Grant
    Filed: September 30, 1997
    Date of Patent: November 23, 1999
    Inventor: Martin P. Lepselter
  • Patent number: 5962975
    Abstract: A flat-panel gas discharge display operable with either alternating or direct current includes magnetic elements within certain of the electrodes which define the discharge cell. The display may be free of implosive forces when operated at least at substantially atmospheric pressure. The display comprises a first set of conductors disposed on a transparent substrate and a second set crossing over the first set at a distance therefrom. The second set of conductors includes a magnetic core or layer whereby the second set of conductors is magnetically attracted to an array of contact points on the substrate. An array of crosspoints is formed at each location where a conductor of the second set crosses over a conductor of the first set. A gas is contained in the space between the first and second sets of conductors at each crosspoint. The gas will undergo light emissive discharge when a voltage greater than or equal to the Paschen minimum firing voltage is applied at a crosspoint.
    Type: Grant
    Filed: December 2, 1997
    Date of Patent: October 5, 1999
    Inventor: Martin P. Lepselter
  • Patent number: 5954560
    Abstract: A method for making a flat-panel gas discharge display is disclosed. The display is formed on a single substrate by providing a first set of conductors on the substrate, providing a second set of conductors on a supporting roll, orienting the second set of conductors at an angle relative to the first set, and affixing the second set of conductors to the substrate.
    Type: Grant
    Filed: December 12, 1997
    Date of Patent: September 21, 1999
    Assignee: Spectron Corporation of America, L.L.C.
    Inventor: Martin P. Lepselter
  • Patent number: 5777436
    Abstract: A flat-panel gas discharge display operable with either alternating or direct current is free of implosive forces because it operates at least at substantially atmospheric pressure. The display comprises a first set of conductors disposed on a transparent substrate and a second set crossing over the first set at a distance therefrom. An array of crosspoints is formed at each location where a conductor of the second set crosses over a conductor of the first set. A gas is contained in the space between the first and second sets of conductors at each crosspoint. The gas will undergo light emissive discharge when a voltage greater than or equal to the Paschen minimum firing voltage is applied at a crosspoint. Air may be used as the operative gas. The display is formed on a single substrate, and may be stacked with additional displays in lieu of one or more capping layers. At least one of the sets of conductors may be provided with an aperture at each of the crosspoints to facilitate viewing the discharge.
    Type: Grant
    Filed: March 11, 1996
    Date of Patent: July 7, 1998
    Assignee: Spectron Corporation of America, L.L.C.
    Inventor: Martin P. Lepselter
  • Patent number: 5654727
    Abstract: A flat-panel gas discharge display operable with either alternating or direct current is free of implosive forces because it operates at least at substantially atmospheric pressure. The display comprises a first set of conductors disposed on a transparent substrate and a second set crossing over the first set at a distance therefrom. An array of crosspoints is formed at each location where a conductor of the second set crosses over a conductor of the first set. A gas is contained in the space between the first and second sets of conductors at each crosspoint. The gas will undergo light emissive discharge when a voltage greater than or equal to the Paschen minimum firing voltage is applied at a crosspoint. Air may be used as the operative gas. The display is formed on a single substrate, and may be stacked with additional displays in lieu of one or more capping layers. At least one of the sets of conductors may be provided with an aperture at each of the crosspoints to facilitate viewing the discharge.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: August 5, 1997
    Assignee: Spectron Corporation of America, L.L.C.
    Inventor: Martin P. Lepselter
  • Patent number: 5634836
    Abstract: A flat-panel gas discharge display operable with either alternating or direct current is free of implosive forces because it operates at least at substantially atmospheric pressure. The display comprises a first set of conductors disposed on a transparent substrate and a second set crossing over the first set at a distance therefrom. An array of crosspoints is formed at each location where a conductor of the second set crosses over a conductor of the first set. A gas is contained in the space between the first and second sets of conductors at each crosspoint. The gas will undergo light emissive discharge when a voltage greater than or equal to the Paschen minimum firing voltage is applied at a crosspoint. Air may be used as the operative gas. The display is formed on a single substrate, and may be stacked with additional displays in lieu of one or more capping layers. At least one of the sets of conductors may be provided with an aperture at each of the crosspoints to facilitate viewing the discharge.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: June 3, 1997
    Assignee: Spectron Corporation of America, L.L.C.
    Inventor: Martin P. Lepselter
  • Patent number: 5469021
    Abstract: A flat-panel gas discharge display operable with either alternating or direct current is free of implosive forces because it operates at substantially atmospheric pressure. The display comprises a first set of conductors disposed on a transparant substrate and a second set of conductors crossing over the first set at a distance therefrom. An array of crosspoints is formed at each location where a conductor of the second set crosses over a conductor of the first set. A gas is contained in the space between the sets of conductors at each crosspoint. The gas will undergo light emissive discharge when a Paschen minimum firing voltage is applied to the pair of crossed conductors crossing at that crosspoint. Air may be used as the operative gas. The display may be formed on a single side of the substrate. At least one of the sets of conductors may be provided with an aperture at each of the crosspoints to facilitate viewing the discharge. A system incorporating the flat-panel display is described.
    Type: Grant
    Filed: June 2, 1993
    Date of Patent: November 21, 1995
    Assignees: BTL Fellows Company, LLC, Spectron Corporation of America, L.L.C.
    Inventor: Martin P. Lepselter
  • Patent number: 5455427
    Abstract: An apparatus for exposing a radiation sensitive workpiece to define patterns therein includes an electron gun, a mask with spaced apertures for passing electron radiation, and a radiation deflector-blanker to direct the radiation to selected ones of the apertures and to form separate beamlets from the apertures then demagnify the separate beamlets and direct them onto the workpiece without crossing them. In one embodiment, the groups of apertures are fixed on the mask and define fixed undivided profiles in the path of the radiation.
    Type: Grant
    Filed: April 28, 1993
    Date of Patent: October 3, 1995
    Assignee: Lepton, Inc.
    Inventors: Martin P. Lepselter, Sheldon M. Kugelmass
  • Patent number: 5020083
    Abstract: An X-ray mask for manufacturing chips is produced by forming an X-ray transparent semiconductor membrane with gaps and including X-ray transparent material in the gaps. In one embodiment the opaque material is formed by sputtering Pt onto the semiconductor material to form Pt silicides in the gaps. In another embodiment the semiconductor material is exposed to W in a silane mixture and the W replaces the semiconductor material so that the W projects into the material.
    Type: Grant
    Filed: May 19, 1989
    Date of Patent: May 28, 1991
    Assignee: Lepton Inc.
    Inventors: Martin P. Lepselter, Herbert A. Waggener
  • Patent number: 4742234
    Abstract: An elongated source of charged particles is utilized in a lithographic system to form multiple focused electron (or ion) beams arranged in a linear array. The basis for an extremely high-throughput lithographic system especially suited for direct writing applications is thereby provided.
    Type: Grant
    Filed: May 12, 1987
    Date of Patent: May 3, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Martin Feldman, Martin P. Lepselter
  • Patent number: 4675715
    Abstract: A resistive load element comprises a Schottky barrier metal layer formed on the top surface of a doped p-type polycrystalline silicon (polysilicon) plug contacting a surface n.sup.+ zone located in a semiconductor body at a major horizontal surface thereof. The Schottky barrier metal layer is advantageously essentially a metal compound, such as titanium nitride, which does not react with the polysilicon and which forms a Schottky barrier contact with the polysilicon top surface of the plug. The polysilicon plug extends vertically down to the n.sup.+ zone through an aperture in an insulating layer that coats the major surface of the semiconductor body. The top surface of the Schottky barrier layer is coated with another metal layer, such as aluminum, for interconnection purposes. A pair of such elements can be integrated as loads, for example, in a static random access memory ("flip-flop") cell.
    Type: Grant
    Filed: October 7, 1985
    Date of Patent: June 23, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Martin P. Lepselter, Ashok K. Sinha, Sheila Vaidya
  • Patent number: 4665414
    Abstract: Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, acceptor doping is carried out in either a one-step or a two-step ion implantation procedure. For n-channel devices, donor doping is carried out in a two-step procedure. In each case, current injection into the channel is enhanced and leakage to the substrate is reduced while still maintaining substantial immunity to parasitic bipolar transistor action (MOS devices) and to latchup (CMOS devices).
    Type: Grant
    Filed: January 21, 1986
    Date of Patent: May 12, 1987
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Conrad J. Koeneke, Martin P. Lepselter, William T. Lynch
  • Patent number: 4485550
    Abstract: Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, acceptor doping is carried out in either a one-step or a two-step ion implantation procedure. For n-channel devices, donor doping is carried out in a two-step procedure. In each case, current injection into the channel is enhanced and leakage to the substrate is reduced while still maintaining substantial immunity to parasitic bipolar transistor action (MOS devices) and to latchup (CMOS devices).
    Type: Grant
    Filed: July 23, 1982
    Date of Patent: December 4, 1984
    Assignee: AT&T Bell Laboratories
    Inventors: Conrad J. Koeneke, Martin P. Lepselter, William T. Lynch
  • Patent number: 4343082
    Abstract: In the fabrication of a metal oxide semiconductor field effect transistor (MOSFET) or of a metal gate field effect transistor (MESFET), characterized by a polycrystalline silicon gate (13) and a short channel of about a micron or less, a sequence of steps is used involving the simultaneous formation of source, drain, and gate electrode contacts by a bombardment with a transition metal, such as platinum, which forms metal-silicide layers (19, 21, 18) on the source and drain regions (10.1, 10.2) as well as the silicon gate electrode (13).
    Type: Grant
    Filed: April 17, 1980
    Date of Patent: August 10, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Martin P. Lepselter, Simon M. Sze
  • Patent number: 4325778
    Abstract: A high-throughput apparatus is utilized in a process for sputter etching or reactive sputter etching of wafers. The apparatus comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cylindrical electrode. A source of a-c power is capacitively coupled to the cylindrical electrode and the center electrode is grounded. By establishing a suitable plasma within the apparatus, simultaneous anisotropic etching of multiple wafers can be achieved.
    Type: Grant
    Filed: January 16, 1981
    Date of Patent: April 20, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Martin P. Lepselter
  • Patent number: 4300152
    Abstract: A CMOS integrated circuit structure which is not susceptible to latchup utilizes insulated-gate field-effect transistors having Schottky barrier source and drains (SB-IGFET). In the preferred embodiment, the n-channel device of an adjacent complementary pair of transistors in a CMOS circuit is provided with diffused source and drain while the p-channel device of the pair is provided with PtSi-Si Schottky barrier contact source and drain. Such a structure completely eliminates the parasitic pnpn structure which causes the latchup problem in conventional CMOS structures.
    Type: Grant
    Filed: April 7, 1980
    Date of Patent: November 10, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Martin P. Lepselter
  • Patent number: RE32613
    Abstract: In the fabrication of a metal oxide semiconductor field effect transistor (MOSFET) or of a metal gate field effect transistor (MESFET), characterized by a polycrystalline silicon gate (13) and a short channel of about a micron or less, a sequence of steps is used involving the simultaneous formation of source, drain, and gate electrode contacts by a bombardment with a transition metal, such as platinum, which forms metal-silicide layers (19, 21, 18) on the source and drain regions (10.1, 10.2) as well as the silicon gate electrode (13).
    Type: Grant
    Filed: July 19, 1985
    Date of Patent: February 23, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Martin P. Lepselter, Simon M. Sze