Abstract: A defuzzification apparatus for defuzzification of fuzzy data representative of one or more entities or events, the fuzzy data specifying for each of the one or more entities or events, a membership level, the defuzzification apparatus including one or more processors configured to generate, using the fuzzy data, a set of computer executable instructions representative of a function of the fuzzy data, and execute, using a predetermined fuzzy membership value, the set of computer executable instructions to determine crisp data. The defuzzification apparatus may be coupled to crisp data processors configured to receive the crisp data and perform crisp data processing on the received crisp data so as to generate further crisp data. The crisp data processor may be coupled to a fuzzification apparatus including one or more processors configured to process the received further crisp data to generate therefrom further fuzzy data.

Abstract: The invention relates to a method of fabricating a semiconductor device, the method including: providing a stacked semiconductor structure having a substrate, a buffer layer and one or more device layers; depositing a layer of AlSb on one or more regions of the upper surface of the stacked structure; and oxidising the AlSb layer in the presence of water to form a layer of aluminium oxide on the one or more regions of the upper surface. The semiconductor device is preferably a field effect transistor, and the method preferably includes the additional step of depositing source, drain and/or gate electrodes. In preferred embodiments, the method is controlled so as to avoid exposing the intermediate AlSb structure to the atmosphere and/or the oxidation step is conducted at a temperature between 100° and 300° C.