Abstract: A method of electrodepositing a doped compound semiconductor film including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with a semiconductor layer of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.

Abstract: A method of electrodepositing a doped compound semiconductor film including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with a semiconductor layer of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.

Abstract: A three layer, photovoltaic structure having polycrystalline semiconductor layers disposed in series optically and in sequential touching contact includes a relatively wide optical bandgap energy window layer, a light-absorbing layer and a third, relatively wide bandgap energy layer that forms a minority carrier mirror with the light-absorbing layer. All three layers have different compositions so that the structure includes two heterojunctions. The light-absorbing layer and third layer are of the same conductivity type. The structure is conveniently realized using II-VI semiconductor compounds such as a cadmium sulfide or zinc sulfide window layer, a mercury cadmium telluride, cadmium telluride, zinc cadmium telluride or mercury zinc telluride light-absorbing layer and a third layer of cadmium telluride, zinc telluride, zinc cadmium telluride, mercury cadmium telluride or cadmium manganese telluride. Cadmium is present in at least two of the three layers of the novel structures.

Abstract: A three layer, photovoltaic structure having polycrystalline semiconductor layers disposed in series optically and in sequential touching contact includes a relatively wide optical bandgap energy window layer, a light-absorbing layer and a third, relatively wide bandgap energy layer that forms a minority carrier mirror with the light-absorbing layer. All three layers have different compositions so that the structure includes two heterojunctions. The light-absorbing layer and third layer are of the same conductivity type. The structure is conveniently realized using II-VI semiconductor compounds such as a cadmium sulfide or zinc sulfide window layer, a mercury cadmium telluride, cadmium telluride, zinc cadmium telluride or mercury zinc telluride light-absorbing layer and a third layer of cadmium telluride, zinc telluride, zinc cadmium telluride, mercury cadmium telluride or cadmium manganese telluride. Cadmium is present in at least two of the three layers of the novel structures.

Abstract: An electrochemical method is provided for maintaining the optimum activity of copper-containing catalysts for the production of amides from nitriles and water. Also provided is a process for producing amides from nitriles and water by hydrolysis.

Abstract: An electrochemical method is provided for maintaining the optimum activity of copper-containing catalysts for the production of amides from nitriles and water. Also provided is a process for producing amides from nitriles and water by hydrolysis.