Patents by Inventor Mary Anne Tupta

Mary Anne Tupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240036101
    Abstract: A test and measurement instrument, includes a user interface, one or more probes configured to connect to a device under test comprising a MOSFET, and one or more processors configured to execute code that causes the one or more processors to: set a target voltage to be measured across the MOSFET, apply a force voltage to the MOSFET, measure a drain current and a drain voltage of the MOSFET with the one or more probes, determine if a difference between the measured drain voltage and the target voltage meets a threshold, when the difference does not meet the threshold, use the measured drain voltage, the measured drain current, and a load resistance to determine a new force voltage value to compensate for the load resistance, set the force voltage to the new force voltage value, and repeat the apply, measure and determine steps as needed.
    Type: Application
    Filed: July 24, 2023
    Publication date: February 1, 2024
    Applicant: Keithley Instruments, LLC
    Inventors: Alexander N. Pronin, Mary Anne Tupta, Andrew Alan Shetler
  • Patent number: 10962585
    Abstract: A testing environment includes a first measuring unit connected to a gate of a MOSFET device and a second measuring unit connected to a drain of the MOSFET device. The testing environment is particularly useful for testing gate charge for MOSFET devices. In a first phase, the gate of the device is driven with electrical current while the drain is driven with a constant voltage. As the MOSFET device turns on, the second measuring unit switches from providing the constant voltage to providing a constant current to the drain of the MOSFET, while measuring the drain voltage. The switching of modes is automatic and occurs without user intervention. After the MOSFET device has been driven to VgsMax by the gate current, all of the relevant data is stored, which may be analyzed and presented to a user in a User Interface or presented in other manner.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: March 30, 2021
    Assignee: Keithley Instruments, LLC
    Inventors: Alexander N. Pronin, Mary Anne Tupta
  • Publication number: 20190346501
    Abstract: A testing environment includes a first measuring unit connected to a gate of a MOSFET device and a second measuring unit connected to a drain of the MOSFET device. The testing environment is particularly useful for testing gate charge for MOSFET devices. In a first phase, the gate of the device is driven with electrical current while the drain is driven with a constant voltage. As the MOSFET device turns on, the second measuring unit switches from providing the constant voltage to providing a constant current to the drain of the MOSFET, while measuring the drain voltage. The switching of modes is automatic and occurs without user intervention. After the MOSFET device has been driven to VgsMax by the gate current, all of the relevant data is stored, which may be analyzed and presented to a user in a User Interface or presented in other manner.
    Type: Application
    Filed: May 3, 2019
    Publication date: November 14, 2019
    Applicant: Keithley Instruments, LLC
    Inventors: Alexander N. Pronin, Mary Anne Tupta