Abstract: A slew rate improved operational amplifier circuit is provided to improve the slew rates of an operational amplifier with minimal sacrifices in power dissipation and other operational amplifier parameters. To improve the slew rates of operational amplifiers, additional current sources are activated when a slewing operation is detected. The detection of slewing operations and the activation of current sources upon detection can be implemented using two comparator circuits—one for a positive slewing operation, and one for a negative slewing operation. A sub-45 nm FinFET implementation of this slew rate improvement concept was implemented and compared against slew rate optimized individual two-stage operational amplifiers. Simulations show that slew rates were significantly improved by the implementation of the comparator circuits (5590 V/?s vs. 273 V/?s), with minimal increases in power dissipation (78 ?W vs. 46 ?W).

Abstract: In various embodiments, a semiconductor device is provided. The semiconductor device may include a first source/drain region, a second source/drain region, an active region electrically coupled between the first source/drain region and the second source/drain region, a trench disposed between the second source/drain region and at least a portion of the active region, a first isolation layer disposed over the bottom and the sidewalls of the trench, electrically conductive material disposed over the isolation layer in the trench, a second isolation layer disposed over the active region, and a gate region disposed over the second isolation layer. The electrically conductive material may be coupled to an electrical contact.

Abstract: This disclosure relates to devices and methods relating to coupled first and second device portions.

Abstract: Embodiments relate to a field-effect transistor that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region of the first conductivity type, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.

Abstract: In an embodiment, a semiconductor device is provided. The semiconductor device may include a first diffusion region, a second diffusion region an active region disposed between the first diffusion region and the second diffusion region, a control region disposed above the active region, a first trench isolation disposed laterally adjacent to the first diffusion region opposite to the active region, and a second trench isolation disposed between the second diffusion region and the active region. The second trench isolation may have a smaller depth than the first trench isolation.