Abstract: A temperature measurement sensor according to an exemplary embodiment includes a substrate and an optical fiber provided on an upper surface of the substrate and extending along the upper surface. The temperature measurement sensor further includes a light introduction path of a space that allows a space above the upper surface and a space below a lower surface of the substrate to communicate with each other and an optical coupling portion provided on the upper surface and disposed in the light introduction path. The optical coupling portion is optically connected to the end surface of the optical fiber. The optical fiber forms the first pattern shape and the second pattern shape. The first pattern shape includes the optical fiber more densely than the second pattern shape. Light incident on the optical coupling portion from a side of the lower surface through the light introduction path reaches the end surface through the optical coupling portion.

Abstract: A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.

Abstract: A jig includes a base, light sources disposed on the base, the sources configured to emit light of different wavelengths, a controller disposed on the base, the controller being configured to cause the light sources to be turned on or off based on a given program, and a power source disposed on the base, the power source being configured to supply power to the light sources and the controller. The jig has a shape enabling a transfer device to transfer the jig, the transfer device being provided in a vacuum transfer module and configured to transfer a substrate.

Abstract: A temperature measurement sensor according to an exemplary embodiment includes a substrate and an optical fiber provided on an upper surface of the substrate and extending along the upper surface. The temperature measurement sensor further includes a light introduction path of a space that allows a space above the upper surface and a space below a lower surface of the substrate to communicate with each other and an optical coupling portion provided on the upper surface and disposed in the light introduction path. The optical coupling portion is optically connected to the end surface of the optical fiber. The optical fiber forms the first pattern shape and the second pattern shape. The first pattern shape includes the optical fiber more densely than the second pattern shape. Light incident on the optical coupling portion from a side of the lower surface through the light introduction path reaches the end surface through the optical coupling portion.

Abstract: A rotation apparatus includes a first disk-shaped rotation body capable of rotating around a first rotation axis, a plurality of first permanent magnets arranged at a peripheral part of the first disk-shaped rotation body so that N-poles and S-poles thereof are distributed alternately, at least one pair of electromagnets arranged at static positions with a predetermined interval, and a pair of sensor switches for respectively detecting rotational positions of the N-poles and the S-poles of the plurality of first permanent magnets and for electrically energizing the at least one pair of electromagnets. One electromagnet of the pair of electromagnets is energized based on a detected result of the pair of sensor switches to move the first permanent magnet adjacent to the energized electromagnet, by an attractive force and a repulsive force between the energized electromagnet and the first permanent magnet so as to rotate the first disk-shaped rotation body.

Abstract: A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.

Abstract: A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.

Abstract: This plasma processing method includes a film formation step, a plasma processing step and a removal step. In the film formation step, a silicon oxide film is formed on the surface of a member within a chamber by means of plasma of an oxygen-containing gas and a silicon-containing gas at a flow rate ratio of the oxygen-containing gas to the silicon-containing gas of 0.2-1.4. In the plasma processing step, after the formation of the silicon oxide film on the surface of the member, an object to be processed that has been carried into the chamber is subjected to plasma processing with use of plasma of a processing gas. In the removal step, after carrying the plasma-processed object out of the chamber, the silicon oxide film is removed from the surface of the member by means of plasma of a fluorine-containing gas.

Abstract: A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck that electrostatically attracts the workpiece. The de-chuck control method includes a discharge step of introducing an inert gas into a chamber after a plasma process and performing a discharge process; a high pressure step of introducing a gas having a lower ionization energy than helium gas after the discharge step, and maintaining a pressure within the chamber to a higher pressure than a pressure during the plasma process or a pressure during the discharge step; and a de-chuck step of de-chucking the workpiece from the electrostatic chuck with a support pin while the higher pressure is maintained by the high pressure step or after the higher pressure is maintained by the high pressure step.

Abstract: A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.

Abstract: This plasma processing method includes a film formation step, a plasma processing step and a removal step. In the film formation step, a silicon oxide film is formed on the surface of a member within a chamber by means of plasma of an oxygen-containing gas and a silicon-containing gas at a flow rate ratio of the oxygen-containing gas to the silicon-containing gas of 0.2-1.4. In the plasma processing step, after the formation of the silicon oxide film on the surface of the member, an object to be processed that has been carried into the chamber is subjected to plasma processing with use of plasma of a processing gas. In the removal step, after carrying the plasma-processed object out of the chamber, the silicon oxide film is removed from the surface of the member by means of plasma of a fluorine-containing gas.

Abstract: A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck that electrostatically attracts the workpiece. The de-chuck control method includes a discharge step of introducing an inert gas into a chamber after a plasma process and performing a discharge process; a high pressure step of introducing a gas having a lower ionization energy than helium gas after the discharge step, and maintaining a pressure within the chamber to a higher pressure than a pressure during the plasma process or a pressure during the discharge step; and a de-chuck step of de-chucking the workpiece from the electrostatic chuck with a support pin while the higher pressure is maintained by the high pressure step or after the higher pressure is maintained by the high pressure step.

Abstract: A degree of tilting caused by consumption of a focus ring can be suppressed. A plasma processing apparatus includes a chamber configured to perform a plasma process on a target object; a mounting table which is provided within the chamber and has a mounting surface on which the target object is mounted; and the focus ring, provided on the mounting table to surround the target object mounted on the mounting surface, having a first flat portion lower than the mounting surface, a second flat portion higher than the first flat portion and not higher than a target surface of the target object, and a third flat portion higher than the second flat portion and the target surface of the target object in sequence from an inner peripheral side thereof to an outer peripheral side thereof.

Abstract: A thermally conductive sheet is used between a mounting table for mounting thereon a target substrate and an annular focus ring mounted on the mounting table to surround a circumferential peripheral portion of the target substrate. Further, the mounting table includes therein a cooling unit and is disposed in a depressurized accommodating chamber for accommodating therein the target substrate. The thermally conductive sheet has a non-adhesive layer on each of one or more surfaces thereof.

Abstract: A heat-transfer structure which can keep a consumable component at a temperature of 225° C. or less during etching of a substrate. The heat-transfer structure is disposed in a chamber where plasma processing is performed on a wafer as the substrate under a reduced pressure. The heat-transfer structure is comprised of a focus ring having an exposed surface exposed to plasma, a susceptor and an electrostatic chuck that cool the consumable component, and a heat-transfer sheet interposed between the focus ring and the electrostatic chuck and made of a gel-like material. The ratio of hardness of the heat-transfer sheet expressed in Asker C to thermal conductivity of the heat-transfer sheet expressed in W/m·K is less than 20.

Abstract: A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is disposed in the housing chamber. An annular focus ring is mounted on the mounting stage such as to surround a peripheral portion of the mounted substrate. A heat transfer film is formed on a surface of the focus ring which contacts the mounting stage by printing processing.

Abstract: A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

Abstract: A focus ring heat transfer method improves heat transfer of a focus ring arranged in an outer peripheral portion of a mounting surface of a mounting table adapted to mount a target substrate in a chamber. The method includes steps of: disposing a heat transfer sheet between the focus ring and the mounting table; and vacuum-evacuating the chamber prior to processing the target substrate and then restoring the pressure the inside of the chamber to an atmospheric pressure or a light vacuum pressure. Therefore, air present in a fine gap between the heat transfer sheet and the mounting surface is removed to allow the heat transfer sheet to adhere to the mounting surface.

Abstract: A focus ring is placed on a substrate mounting table for mounting a target substrate thereon to surround the target substrate. The focus ring converges plasma on the target substrate when the target substrate is subjected to plasma processing. The focus ring is configured to create a temperature difference in its radial direction and over its full circumference during the plasma-processing of the target substrate. The focus ring also includes a radial outer region as a higher temperature region and a radial inner region as a lower temperature region. A groove is formed between the radial outer region and the radial inner region to extend over the full circumference of the focus ring.