Abstract: A non-volatile memory semiconductor device includes a first insulation layer, two diffusion regions, a memory gate oxide layer, a first control gate, a second insulation layer, a floating gate of polysilicon, a third insulation layer and a second control gate. The first insulation layer is formed on a semiconductor substrate. The two diffusion regions are formed on a surface of the substrate. The memory gate oxide layer is formed over the two diffusion regions on the substrate. The first control gate including a diffusion region is formed on the surface of the substrate. The second insulation layer is formed on the first control gate. The floating gate of polysilicon is formed over the memory gate oxide layer, the first insulation layer, and the second insulation layer. The third insulation layer is formed on the floating gate. The second control gate is disposed on the floating gate.

Abstract: A non-volatile memory semiconductor device includes a first insulation layer, two diffusion regions, a memory gate oxide layer, a first control gate, a second insulation layer, a floating gate of polysilicon, a third insulation layer and a second control gate. The first insulation layer is formed on a semiconductor substrate. The two diffusion regions are formed on a surface of the substrate. The memory gate oxide layer is formed over the two diffusion regions on the substrate. The first control gate including a diffusion region is formed on the surface of the substrate. The second insulation layer is formed on the first control gate. The floating gate of polysilicon is formed over the memory gate oxide layer, the first insulation layer, and the second insulation layer. The third insulation layer is formed on the floating gate. The second control gate is disposed on the floating gate.

Abstract: A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.

Abstract: Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 ?m?1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: The present invention is to provide a technology to establish a new cycle-based organic chemical industry, which may be called a polymer cascade (polymer reflux industry) wherein the polymer substances shall not remain the final products, but still give birth to synthetic materials as raw materials for chemical industry and produce useful organic compounds.

Abstract: A runner-less molding device for thermosetting resins and rubbers, characterized by a movable runner bush (15), through which an uncured or unvulcanized fluid material kept at a low temperature supplied from a pouring nozzle (31) can flow, is slidably arranged in a temperature controlling bush (13) communicating with a gate (4) of a cavity (1); an insulation space (A) is formed by moving the movable runner bush (15) apart from the gate (4) during heating; a valve pin (18) is movably inserted into said movable runner bush (15); and the valve pin (18) is arranged so as to open and close the gate (4) in accordance with a pouring operation of the fluid material.

Abstract: A semiconductor device has a configuration in which more than three kinds of wells are formed with small level differences. One kind of well from among the more than three kinds of wells has a surface level higher than other kinds of wells from among the more than three kinds of wells. The one kind of well is formed adjacent to and self-aligned to at least one kind of well from among the other kinds of wells. The other kinds of wells are different in one of a conductivity type, an impurity concentration and a junction depth, and include at least two kinds of wells having the same surface level.

Abstract: A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.

Abstract: A non-volatile memory semiconductor device includes a first insulation layer, two diffusion regions, a memory gate oxide layer, a first control gate, a second insulation layer, a floating gate of polysilicon, a third insulation layer and a second control gate. The first insulation layer is formed on a semiconductor substrate. The two diffusion regions are formed on a surface of the substrate. The memory gate oxide layer is formed over the two diffusion regions on the substrate. The first control gate including a diffusion region is formed on the surface of the substrate. The second insulation layer is formed on the first control gate. The floating gate of polysilicon is formed over the memory gate oxide layer, the first insulation layer, and the second insulation layer. The third insulation layer is formed on the floating gate. The second control gate is disposed on the floating gate.

Abstract: A method for producing an aryl ether produced by bonding an aryloxy of hydroxyaryl with an organic group of organic halogen, which comprises reacting hydroxyaryl with organic halogen in gaseous carbon dioxide or supercritical carbon dioxide in the presence of base and catalytic amount of onium salt.

Abstract: Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an aperture formed in silicon oxide films and is interposed between the wiring line and the bonding pad.

Abstract: Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an aperture formed in silicon oxide films and is interposed between the wiring line and the bonding pad.

Abstract: The present invention is to provide a technology to establish a new cycle-based organic chemical industry, which may be called a polymer cascade (polymer reflux industry) wherein the polymer substances shall not remain the final products, but still give birth to synthetic materials as raw materials for chemical industry and produce useful organic compounds.

Abstract: A visual axis entry transmission apparatus and method enables a physically handicapped person who can not depress a foot button to easily transmit the selection of a character to be input. 50 characters are displayed, via a display controller, on the liquid crystal device of a head-mounted display unit and on an external monitor. The visual axis position of a user is detected by a visual axis detection circuit, and a character at the visual axis position is obtained based on the detected visual axis position data. Selection character data for the past 100 selections are then updated. When the condition for the entry of a character is satisfied by this new character selection, the character is added to an input character string, and the newly input character is pronounced to notify the user that the character entry has been completed.

Abstract: A processing system for processing a substrate. The processing system includes a plurality of processing machines, a machine movable along a transfer path for transferring the substrate to the machines, a drive unit for driving the machine, and a control unit. The control unit includes a memory for storing a teaching threshold in a teaching mode and a practical operation threshold in a practical operation mode that is higher than the teaching threshold when a moving parameter of the drive unit exceeds a given value. The control unit also includes a controller monitoring a parameter representing a moving state of the drive unit to stop the drive unit when the parameter exceeds the practical operation threshold in the practical operation mode or when the parameter exceeds the teaching threshold in the teaching mode.

Abstract: To suppress color moire in a color image recording apparatus, a method for recording a color image by forming recording dots of at least first through third colors on a recording medium in a plurality of lines of recording dots each extending in a main scan direction and a plurality of rows of recording dots each extending in a sub-scan direction, wherein each line is divided into a predetermined number of lines in a sub-scanning direction to form sub-lines, and dots are printed in a respective sub-line for every line.

Abstract: A cleaning unit for cleaning a substrate is disclosed, that comprises a holding mechanism for rotatably and horizontally holding the substrate, a first traveling means for holding both sides of a cleaning mechanism having at least one cleaning member and for moving the cleaning mechanism in such a manner that the first traveling means is kept in parallel with the substrate held by the holding mechanism, and a second traveling means for holding both sides of a processing solution supplying mechanism having supplying mechanisms for supplying different types of processing solution and for moving the cleaning mechanism in such a manner that the second traveling means is kept in parallel with the substrate held by the holding mechanism. Thus, the strength of the cleaning unit according to the present invention is higher than the strength of a conventional cleaning unit that holds an arm on one side thereof.

Abstract: A visual axis input and decision transfer device operates so that when a detection-result condition, such as a visual-axis-detection success or failure, blinking, selecting of the same choice, or the like is judged based on visual-point-position data, and a user is notified of detection-result information indicating the detection-result condition in response to a judgment result by changing a selection frame color of characters, the user can confirm the detection result of the visual axis, and is prevented from repeating wasteful operations many times.

Abstract: A heat processing device includes a hot plate on which a substrate is placed, a heater press-fitted in the hot plate for heating the substrate through the hot plate, and a reflecting plate facing an underside and side faces of the hot plate at a distance therefrom for reflecting heat radiated from the hot plate. An outside frame is arranged on the surface of the hot plate so as to surround the substrate.