Patents by Inventor Masaharu Muramatsu

Masaharu Muramatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210305312
    Abstract: A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction.
    Type: Application
    Filed: June 10, 2021
    Publication date: September 30, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Shin-ichiro TAKAGI, Yasuhito YONETA, Masaharu MURAMATSU
  • Patent number: 11127777
    Abstract: A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: September 21, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shin-ichiro Takagi, Yasuhito Yoneta, Masaharu Muramatsu
  • Patent number: 11114489
    Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: September 7, 2021
    Assignees: KLA-Tencor Corporation, Hamamatsu Photonics K.K.
    Inventors: Yung-Ho Alex Chuang, Jingjing Zhang, John Fielden, David L. Brown, Masaharu Muramatsu, Yasuhito Yoneta, Shinya Otsuka
  • Patent number: 11094547
    Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.
    Type: Grant
    Filed: September 1, 2016
    Date of Patent: August 17, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Masaharu Muramatsu, Hisanori Suzuki, Yasuhito Yoneta, Shinya Otsuka, Hirotaka Takahashi
  • Patent number: 11088190
    Abstract: An optical semiconductor device includes a semiconductor substrate having a plurality of photoelectric conversion parts and having a trench formed to separate the plurality of photoelectric conversion parts from each other, an insulating layer formed on at least an inner surface of the trench, a boron layer formed on the insulating layer, and a metal layer formed on the boron layer.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: August 10, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Masaharu Muramatsu, Yasuhito Miyazaki, Hirotaka Takahashi
  • Publication number: 20210057477
    Abstract: A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.
    Type: Application
    Filed: November 27, 2018
    Publication date: February 25, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Shin-ichiro TAKAGI, Yasuhito YONETA, Masaharu MURAMATSU, Nao INOUE, Hirokazu YAMAMOTO, Shinichi NAKATA, Takuo KOYAMA
  • Patent number: 10825730
    Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: November 3, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yasuhito Yoneta, Ryoto Takisawa, Shingo Ishihara, Hisanori Suzuki, Masaharu Muramatsu
  • Patent number: 10811459
    Abstract: A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: October 20, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shin-ichiro Takagi, Kentaro Maeta, Yasuhito Yoneta, Hisanori Suzuki, Masaharu Muramatsu
  • Publication number: 20200212098
    Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.
    Type: Application
    Filed: July 19, 2018
    Publication date: July 2, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Shin-ichiro TAKAGI, Mitsuhito MASE, Jun HIRAMITSU, Yasuhito YONETA, Masaharu MURAMATSU
  • Publication number: 20200212097
    Abstract: A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.
    Type: Application
    Filed: July 19, 2018
    Publication date: July 2, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Shin-ichiro TAKAGI, Yasuhito YONETA, Masaharu MURAMATSU
  • Patent number: 10700116
    Abstract: In a back-illuminated solid-state image pickup device, a first group of charge transfer electrodes (vertical shift register) is present in an imaging region, and a second group of charge transfer electrodes (horizontal shift register) is present in a peripheral region around the imaging region. The light incident surface of the semiconductor substrate 4 corresponding to the peripheral region is etched, and an inorganic light shielding substance SH is filled in the etched region. The amount of the inorganic light shielding substance that evaporates and vaporizes under the vacuum environment is extremely small, and the influence on the imaging by the vaporized gas is small.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: June 30, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shinya Otsuka, Hisanori Suzuki, Masaharu Muramatsu
  • Patent number: 10573769
    Abstract: A back-illuminated energy ray detecting element 1 includes a semiconductor substrate and a protective film. The semiconductor substrate has a first principal surface as an energy ray incident surface and a second principal surface opposite to the first principal surface, and a charge generating region configured to generate an electric charge according to incidence of an energy ray is disposed on the second principal surface side. The protective film is disposed on the second principal surface side of the semiconductor substrate to cover at least the charge generating region, and includes silicon nitride or silicon nitride oxide. The protective film has a stress alleviating section configured to alleviate stress generated in the protective film.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: February 25, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yasuhito Miyazaki, Kentaro Maeta, Masaharu Muramatsu
  • Patent number: 10573556
    Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.
    Type: Grant
    Filed: September 1, 2016
    Date of Patent: February 25, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Masaharu Muramatsu, Hisanori Suzuki, Yasuhito Yoneta, Shinya Otsuka, Hirotaka Takahashi
  • Publication number: 20190386054
    Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
    Type: Application
    Filed: May 23, 2019
    Publication date: December 19, 2019
    Inventors: Yung-Ho Alex Chuang, Jingling Zhang, John Fielden, David L. Brown, Masaharu Muramatsu, Yasuhito Yoneta, Shinya Otsuka
  • Patent number: 10483302
    Abstract: A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: November 19, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shin-ichiro Takagi, Kentaro Maeta, Yasuhito Yoneta, Hisanori Suzuki, Masaharu Muramatsu
  • Patent number: 10403677
    Abstract: An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.
    Type: Grant
    Filed: October 31, 2014
    Date of Patent: September 3, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shin-ichiro Takagi, Yasuhito Yoneta, Hisanori Suzuki, Masaharu Muramatsu
  • Patent number: 10283551
    Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: May 7, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Masaharu Muramatsu, Hisanori Suzuki, Yasuhito Yoneta, Shinya Otsuka, Hirotaka Takahashi
  • Patent number: 10269842
    Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: April 23, 2019
    Assignees: Hamamatsu Photonics K.K., KLA-Tencor Corporation
    Inventors: Masaharu Muramatsu, Hisanori Suzuki, Yasuhito Yoneta, Shinya Otsuka, Jehn-Huar Chern, David L. Brown, Yung-Ho Alex Chuang, John Fielden, Venkatraman Iyer
  • Publication number: 20190080911
    Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.
    Type: Application
    Filed: September 1, 2016
    Publication date: March 14, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Masaharu MURAMATSU, Hisanori SUZUKI, Yasuhito YONETA, Shinya OTSUKA, Hirotaka TAKAHASHI
  • Publication number: 20190080912
    Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.
    Type: Application
    Filed: September 1, 2016
    Publication date: March 14, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Masaharu MURAMATSU, Hisanori SUZUKI, Yasuhito YONETA, Shinya OTSUKA, Hirotaka TAKAHASHI