Abstract: A semiconductor device has a semiconductor substrate with a first insulating layer formed thereon. A first wiring includes a layer extending over the first insulating layer and a metallic film of refractory metal having high melting point disposed on the wiring layer. A contact hole is formed in the second insulating layer. Then, a second wiring, having the same material as the first wiring layer, is provided as an upper layer. The metallic film is removed inside the contact hole and the second wiring layer is directly connected to the first wiring layer. Aluminum, silicon, aluminum-silicon alloy, copper-aluminum alloy and the like can be used for the first and second wiring layers. The metallic film may be made of titanium, titanium nitride, molybdenum, tungsten, platinum, chromium or may be a composite film or alloy film of these metals. Further, alloys of above-mentioned high melting point materials may be used. The metallic film has the thickness of about 300 to 3,000 .ANG. and preferably, 500 to 1,500 .

Abstract: An external connection structure for an integrated semiconductor device is disclosed. The semiconductor device includes a substrate on which a wiring layer, which is covered by an insulator layer is disposed. According to the invention, an aperture is provided in the insulative layer to expose the wiring layer. A metallic film lines the aperture, covering the exposed portion of the wiring layer and defining a recess. A bump type electrode of a malleable metal is disposed in the recess. The bump electrode is spaced from the side walls of the recess, and projects beyond the surface of the metallic film surrounding the recess for connection under pressure with an external lead plate.