Abstract: An object of the present invention is to provide a pressure-sensitive adhesive composition excellent in antistatic property of a non-electrification-prevented adherend (subject to be protected) upon peeling, and has reduced stainability in an adherend and excellent in adhesion reliance, and electrification preventing pressure-sensitive adhesive sheets using the same. There is provided a pressure-sensitive composition comprising an ionic liquid, and a (meth)acryl-based polymer containing, as a monomer component, 0.1 to 100% by weight of a (meth)acrylic acid alkylene oxide. In addition, there is provided a pressure-sensitive composition comprising an ionic liquid, and a polymer containing, as a monomer component, 0.5 to 30% by weight of a nitrogen-containing monomer and having a glass transition temperature Tg of no higher than 0° C. Furthermore, there is provided a pressure-sensitive composition comprising an ionic liquid, and a (meth)acryl-based polymer containing, as a monomer component, 0.

Abstract: In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.

Abstract: A removable pressure sensitive adhesive composition includes at least (A) a hydroxyl-group-containing acrylic polymer, (B) an amine compound containing plural hydroxyl groups, and (C) a polyisocyanate compound and has a gel fraction of equal to or more than 70% by weight after drying or curing. A removable pressure sensitive adhesive sheet has a removable pressure sensitive adhesive layer including the removable pressure sensitive adhesive composition formed on one or both sides of a base material. The sheet may have a 180° peel force with respect to a melamine-faced steel sheet of 5 N/20-mm or less and may have a 180 ° peel force after adhesion at 50° C. for 48 hours of 1.2 times or less the initial adhesion (after adhesion at 23° C. for 20 minutes), as determined at a pulling rate of 300 mm/minute, 23° C. and 50% relative humidity.

Abstract: A highly adhesive pressure sensitive adhesive composition includes at least (A) a hydroxyl-group-containing acrylic polymer, (B) an amine compound containing plural hydroxyl groups, and (C) a polyisocyanate compound and has a gel fraction of equal to or more than 10% by weight and less than 70% by weight after drying or curing. A highly adhesive pressure sensitive adhesive sheet has a highly adhesive pressure sensitive adhesive layer including the highly adhesive pressure sensitive adhesive composition formed on one or both sides of a base material. The sheet preferably has a 180° peel force with respect to a stainless steel sheet of 10 N/20-mm or more as determined at a pulling rate of 300 mm/minute, 23° C. and 50% relative humidity.

Abstract: The present invention provides a picture element driving circuit of an active matrix display device, with a configuration of no through-holes, including two or more FETs. A display device of the present invention has a structure in which a first field-effect transistor and a second field-effect transistor are provided, insulation films of the first and second field-effect transistor are formed on the same layer, and semiconductors used as channels of the two field-effect transistors are formed on both surfaces of the insulation film, respectively. The display device has an electric circuit of a structure in which one of source/drain electrodes of the first field-effect transistor is used as a gate electrode of the second field-effect transistor.

Abstract: Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.

Abstract: A hydraulic power transmission is provided with a frictional engagement element as a lock-up clutch between a hydraulic power transmission chamber, housing a pump impeller and a turbine runner, and a servo oil chamber of the lock-up clutch. A lock-up oil passage that supplies lock-up hydraulic pressure to the servo oil chamber is connected to a hydraulic pressure supply circuit that is used in common with a circulation oil passage that supplies hydraulic pressure for circulation to the hydraulic power transmission chamber. An orifice is disposed in the circulation oil passage. It is thus possible to perform lock-up with different supply pressures. A common oil supply for the lock-up oil passage and the circulation oil passage is provided, for example, by disposing a converting circuit that adapts an oil passage connection to hydraulic transmissions with different types of lock-up clutches.

Abstract: A display arranged with, in a matrix way, signal lines for providing brightness information to each of pixels, and scanning lines for selecting, in a predetermined cycle, pixels to be provided with brightness information; intake of the brightness information to each of the pixels being executed by intake of signal voltage of the signal lines via thin-film transistors in each of said pixels, in selecting the scanning lines connected with each of the pixels; and having pixels of n-lines and m-rows, by which the brightness information taken into each of the pixels is retained by capacity thereof, even after the scanning lines connected with each of the pixels become a non-selection state, wherein each of the pixels of each line is provided with at least one semiconductor layer that is common between each of the pixels, and the semiconductor layer is formed in parallel to said signal lines.

Abstract: A liquid film applicator means can apply a photosensitive lyophobic film 18 to a substrate 16. An exposure unit 10 is placed on the back side of the substrate and forms the lyophobic film applied on the substrate into a pattern in alignment with gate electrodes 13. A dropping unit 55 drops a test liquid to a surface of the substrate having a pattern of the lyophobic film formed by the exposure means. A measuring means 58 detects the droplet dropped by the dropping unit. A determining means determines whether the pattern of the lyophobic film formed by the exposure means is proper or not based on the droplet detected by the detecting means.

Abstract: An organic thin-film transistor (TFT) with a large carrier mobility includes a drain electrode, a source electrode, which are made of different materials, and a semiconductor layer formed on upper surface of a substrate. Equipment for manufacturing the organic TFT comprises a substrate mounting unit, a painting unit, a light irradiating unit, a sealed container for housing the above units, and a gas supplying unit of an antioxidant gas to the sealed container. The organic TFT to be manufactured is placed on the substrate mounting unit and a semiconductor layer is formed by using the painting unit. The painted semiconductor layer is dried with a light by using the light irradiating unit. When the light with substantially uniform wavelength is irradiated to the drain and the source electrodes, a temperature gradient is caused in the semiconductor layer. Accordingly, an organic TFT with a large carrier mobility can be manufactured.

Abstract: An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).

Abstract: An electrode substrate in which a lower electrode and an upper electrode are well positioned by way of an insulating film could not be formed by a printing method since positional displacement is caused. The cost was increased outstandingly when using photomasks for positioning. In the present invention, positional displacement does not occur even when using the printing method since the upper electrode and the lower electrode are positioned in self-alignment. Accordingly, a semiconductor device such as a flexible substrate using an organic semiconductor can be formed with low cost by using the printing method.

Abstract: A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

Abstract: The present invention provides inspection of a transmission with higher precision and in a shorter period of time. Before a finished A/T is inspected, a V/B ASSY and an ECU are inspected together by a V/B tester in a subsidiary line. A solenoid current command value (a characteristic value inherent in the A/T) for a linear solenoid of the V/B ASSY is corrected and written into the ECU through CAN communication. Spring load of a return spring SP and stroke of the piston of a hydraulic servo for a frictional engagement element are measured. Actually measured values or corrected values of the spring load and the stroke are stored. In the final inspection of the A/T a finished-product tester reads the stored characteristic values and transmits them to the ECU integrated with the A/T through CAN communication. The characteristic values are then written into the ECU. The finished-product tester inspects the finished A/T product, using the characteristic values thus written into the ECU.

Abstract: The present invention relates to a double-sided pressure-sensitive adhesive tape or sheet for wiring circuit board, which comprises a pressure-sensitive adhesive layer formed by a pressure-sensitive adhesive composition containing an acrylic polymer and a chain transfer substance, in which the pressure-sensitive adhesive layer has characteristics that a gel fraction in the initial stage is from 40 to 70% by weight, and a difference between a gel fraction (% by weight) of the pressure-sensitive adhesive layer after the following solder reflow step and the gel fraction (% by weight) of the pressure-sensitive adhesive layer in the initial stage is 10 or less. The solder reflow step satisfies the following heat treatment conditions. Surface temperature of the double-sided pressure-sensitive adhesive tape or sheet reaches 175±10° C. within 130 to 180 seconds, the surface temperature reaches 230±10° C. within 200 to 250 seconds, the surface temperature reaches 255±15° C.

Abstract: In conventional techniques, there has been a problem such that a pattern failure tends to occur in which electrode patterns formed by coating do not coincide with lyophilic patterns and the coating process is complicated to degrade the productivity. The present invention provides a thin film transistor substrate including: a substrate; a plurality of gate electrodes formed on a flat surface of the substrate so as to form an array constituted with ring-shaped flat patterns formed by continuously connecting the outer peripheries of a plurality of ellipses aligned along the major axis direction, or patterns each formed with the peripheral shape of an ellipse; a gate insulating film formed over the gate electrodes; and source electrodes and drain electrodes formed on the gate insulating film exclusive of the flat surface regions, on the gate insulating film, defined as the projected shapes of the gate electrodes.

Abstract: To increase productivity of organic thin-film transistors, in an organic thin-film transistor manufacturing equipment, a liquid containing at least either one of a wiring material and a semiconductor material is coated on a substrate to form a number of organic thin-film transistors. Substrate carrying means carry the substrate. The substrate is heated by a first heating means, and the temperature of the substrate is controlled by a controller. The liquid containing at least either one of the wiring material and the semiconductor material is heated by a second heating means, and the temperature of this liquid is controlled also by the controller.

Abstract: The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

Abstract: A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprises subjecting single crystal silicon which is prepared by the CZ method and is not subjected to an oxidation treatment (a bare wafer) to an ultra high temperature heat treatment in an oxygen atmosphere and at a temperature of higher than 1200° C. and lower than 1310° C. The method allows the elimination of void defects present in single crystal silicon with reliability.

Abstract: A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are provided. The channel is formed of a semiconductor organic molecular crystal thin film which is highly oriented, and a TFT that is large in the mobility of the carriers that are conducted through the channel, and a lyophilic TFT pattern that is surrounded by a lyophobic region on a substrate are formed, and the configuration of the pattern is featured, whereby a solution of the semiconductor organic molecules which is supplied to an appropriate region of a substrate surface including the channel is spontaneously dried in an anisotropic fashion, and highly oriented crystal is grown in the drying process.