Abstract: A composite substrate includes: a support substrate; a piezoelectric film arranged above the support substrate; and a joining layer arranged between the support substrate and the piezoelectric film, wherein the piezoelectric film includes a polycrystalline substance having a degree of c-axis orientation determined by a Lotgering method of 80% or less, and wherein the joining layer includes an amorphous substance.

Abstract: A member for terahertz equipment includes: a substrate main body having a first principal surface and a second principal surface; and a reflection suppressing portion provided on at least one of the first principal surface or the second principal surface of the substrate main body. The reflection suppressing portion includes a plurality of protrusions which are arranged in a grating shape, and each have a tapered portion in a vertical cross section.

Abstract: An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon. A bonding layer is on the intermediate layer and is composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, and a high resistance silicon and hafnium oxide. A supporting body is composed of a polycrystalline ceramic and is bonded to the bonding layer by direct bonding, and an electrode is on the piezoelectric material substrate.

Abstract: A piezoelectric vibrating device includes a piezoelectric layer composed of a bulk piezoelectric material, a lower electrode on a first surface of the piezoelectric layer and a supporting substrate bonded with the lower electrode.

Abstract: A piezoelectric monocrystalline substrate is composed of a material represented by LiAO3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of ExO(1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29?x?0.89).

Abstract: Provided are a light emitting device having a support layer having a surface with a three-dimensional shape, a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer, and a translucent electrode layer provided on a side of the light emitting functional layer opposite to the support layer. The support layer functions as a reflective electrode, and a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer. The light emitting functional layer has two or more layers composed of semiconductor single crystal grains. Each of the two or more layers has a single crystal structure in a direction approximately normal to the surface with a three-dimensional shape.

Abstract: A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer is made of one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. A neutralized beam is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

Abstract: In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

Abstract: It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

Abstract: A heat discharge structure that includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.

Abstract: In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

Abstract: A piezoelectric monocrystalline substrate is composed of a material represented by LiAO3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of ExO(1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29?x?0.89).

Abstract: An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon, a bonding layer on the intermediate layer and composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, a high resistance silicon and hafnium oxide, a supporting body composed of a polycrystalline ceramic and bonded to the bonding layer by direct bonding, and an electrode on the piezoelectric material substrate.

Abstract: A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer 3 is made of or more material selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. Neutralized beam A is irradiated onto a surface 4 of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

Abstract: It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

Abstract: A device substrate in which no streaked morphological abnormality occurs is achieved. A GaN template substrate includes: a base substrate; and a first GaN layer epitaxially formed on the base substrate, wherein the first GaN layer has a compressive stress greater than or equal to 260 MPa that is intrinsic in an inplane direction, or a full width at half maximum of a peak representing E2 phonons of GaN near a wavenumber of 568 cm?1 in a Raman spectrum is lower than or equal to 1.8 cm?1. With all of these requirements, a device substrate includes: a second GaN layer epitaxially formed on the first GaN layer; and a device layer epitaxially formed on the second GaN layer and made of a group 13 nitride.

Abstract: A heat discharge structure that includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.

Abstract: It is provided a heat discharge structure for a light source device emitting a semiconductor laser. The structure fixes the light source device and discharges heat. The structure includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.

Abstract: A method for manufacturing a light emitting device includes a) forming a first light confinement layer having a plurality of openings on or above one main surface of an oriented polycrystalline substrate, said oriented polycrystalline substrate including a plurality of oriented crystal grains; b) stacking an n-type layer, an active layer, and a p-type layer; c) forming a second light confinement layer on said first light confinement layer so that said second light confinement layer covers said plurality of first columnar structures and said second columnar structure; d) forming a transparent conductive film on said second light confinement layer; e) forming a pad electrode on said transparent conductive film; and f) forming a cathode electrode electrically connected to ends of said plurality of first columnar structures closer to said oriented polycrystalline substrate.

Abstract: A light emitting device that is inexpensive, is easy to manufacture, and has high light extraction efficiency is provided. The light emitting device includes an oriented polycrystalline substrate, a plurality of columnar light emitting parts, and a light confinement layer. The oriented polycrystalline substrate includes a plurality of oriented crystal grains. The plurality of columnar light emitting parts are discretely located on or above one main surface of the oriented polycrystalline substrate in areas in which there are no crystal defects, and are each a columnar part having a longitudinal direction matching a normal direction of the oriented polycrystalline substrate. The light confinement layer is made of a material having a lower refractive index than a material for the plurality of columnar light emitting parts, and is located on or above the oriented polycrystalline substrate so as to surround the plurality of columnar light emitting parts.