Patents by Inventor Masahiro Arai

Masahiro Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7884381
    Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: February 8, 2011
    Assignee: Hitachi Cable, Ltd.
    Inventors: Masahiro Arai, Kazuyuki Iizuka
  • Publication number: 20110007099
    Abstract: Provided is an inverter circuit capable of suppressing an increase in EMI level. In at least one embodiment, the inverter circuit includes: a drive circuit for outputting a pulse signal; a transformer for outputting a drive signal corresponding to the pulse signal to a fluorescent lamp, the transformer including a secondary winding having one end connected to the fluorescent lamp; a detection control circuit for detecting a detection signal corresponding to the drive signal supplied to the fluorescent lamp; a wiring line connecting another end of the secondary winding of the transformer and the detection control circuit; and a wiring line provided together with the wiring line so that magnetic fields generated are cancelled out each other.
    Type: Application
    Filed: November 10, 2008
    Publication date: January 13, 2011
    Applicant: Sharp Kabushiki Kaisha
    Inventor: Masahiro Arai
  • Publication number: 20100308301
    Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.
    Type: Application
    Filed: April 15, 2010
    Publication date: December 9, 2010
    Applicant: Hitachi Cable, Ltd.
    Inventors: Tsunehiro Unno, Katsuya Akimoto, Masahiro Arai
  • Publication number: 20100289420
    Abstract: A lighting device (8) including a cold-cathode fluorescent tube (light source) (9) includes an inverter circuit (16) connected to the cold-cathode fluorescent tube (9) and configured so as to driving the cold-cathode fluorescent tube (9), using PWM dimming. The inverter circuit (16) drives the cold-cathode fluorescent tube (9) while a dimming signal in the PWM dimming and a driving signal for driving the cold-cathode fluorescent tube (9) are synchronized.
    Type: Application
    Filed: October 3, 2008
    Publication date: November 18, 2010
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Masahiro Arai
  • Publication number: 20100207146
    Abstract: A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected.
    Type: Application
    Filed: January 20, 2010
    Publication date: August 19, 2010
    Applicant: HITACHI CABLE, LTD.
    Inventors: Kazuyuki IIZUKA, Masahiro ARAI
  • Patent number: 7747799
    Abstract: Data transfer is performed to and from a host computer using a first block as the minimum unit. Data transfer is performed to and from a storage area using a second block as the minimum unit. A second block set of the storage area stores data obtained from performing data conversion processes that change the size of the data itself, with a first block set as the unit. Here a correspondence relationship is generated between the first block set and the second block set. In response to a read request from the host computer, a second block set, which corresponds to the first block set that includes the first block that is requested, is read, a reverse-conversion process is performed, and the data is sent to the host computer.
    Type: Grant
    Filed: May 19, 2008
    Date of Patent: June 29, 2010
    Assignee: Hitachi, Ltd.
    Inventors: Yutaka Nakagawa, Masahiro Arai
  • Publication number: 20100156952
    Abstract: A lighting device for a display device includes a light source and a light source control device arranged to control the light source. The light source control device is arranged to generate a pulse signal as a light source control signal Vcon to control the light source. The light source control signal Vcon includes pulses, which individually have different shapes.
    Type: Application
    Filed: December 25, 2007
    Publication date: June 24, 2010
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Masahiro Arai
  • Publication number: 20100149789
    Abstract: A lighting device for a display device includes a light source and a chassis arranged to cover the light source. The chassis includes one of a groove section and an opening section located directly below the light source. The one of a groove section and an opening section has a relatively small width at an area directly below a low voltage area of the light source, compared to at an area directly below a high voltage area of the light source.
    Type: Application
    Filed: December 17, 2007
    Publication date: June 17, 2010
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Masahiro Arai
  • Patent number: 7728340
    Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: June 1, 2010
    Assignee: Hitachi Cable, Ltd.
    Inventors: Tsunehiro Unno, Katsuya Akimoto, Masahiro Arai
  • Publication number: 20100128070
    Abstract: A lighting device for a display device includes a light source and a chassis arranged to cover the light source. The light source includes a high voltage area to be subjected to relatively high voltage, and a low voltage area to be subjected to relatively low voltage. The chassis includes a distance providing mechanism arranged to provide a vertical distance between the chassis and the light source, so that the vertical distance is relatively large at the high voltage area of the light source and relatively small at the low voltage area of the light source.
    Type: Application
    Filed: December 25, 2007
    Publication date: May 27, 2010
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Masahiro Arai
  • Patent number: 7714343
    Abstract: An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.
    Type: Grant
    Filed: February 4, 2008
    Date of Patent: May 11, 2010
    Assignee: Hitachi Cable, Ltd.
    Inventors: Tsunehiro Unno, Masahiro Arai
  • Patent number: 7692203
    Abstract: A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: April 6, 2010
    Assignee: Hitachi Cable, Ltd.
    Inventors: Taichiroo Konno, Kazuyuki Iizuka, Masahiro Arai
  • Publication number: 20100078659
    Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.
    Type: Application
    Filed: September 25, 2009
    Publication date: April 1, 2010
    Applicant: HITACHI CABLE, LTD.
    Inventors: Kazuyuki Iizuka, Masahiro Arai
  • Patent number: 7683378
    Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??)??(2), and 0.5<?<0.9??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.
    Type: Grant
    Filed: February 23, 2006
    Date of Patent: March 23, 2010
    Assignee: Hitachi Cable, Ltd.
    Inventors: Manabu Kako, Takehiko Tani, Taiichiro Konno, Masahiro Arai
  • Publication number: 20100065869
    Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.
    Type: Application
    Filed: July 29, 2009
    Publication date: March 18, 2010
    Applicant: HITACHI CABLE, LTD.
    Inventors: Masahiro Arai, Kazuyuki Iizuka
  • Publication number: 20100065870
    Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate is provided at an opposite side of the reflecting layer with respect to a side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. An adhesion layer is provided at a surface of the supporting substrate at an opposite side with respect to a side of the metal bonding layer. A back surface electrode of an alloy contacts with a surface of the adhesion layer at an opposite side with respect to a surface contacting to the supporting substrate.
    Type: Application
    Filed: July 29, 2009
    Publication date: March 18, 2010
    Applicant: HITACHI CABLE, LTD.
    Inventors: Masahiro Arai, Kazuyuki Ilzuka
  • Patent number: 7675072
    Abstract: In a light emitting diode, a light-emitting region is including an active layer provided between a first conductivity type cladding layer formed on the semiconductor substrate and a second conductivity type cladding layer. A transparent conductive film made of a metal oxide is located over the light-emitting region. A layer for preventing exfoliation of the transparent conductive film, the preventing layer being made of a compound semiconductor contains at least aluminum and is located between the light-emitting region and the transparent conductive film. The layer for preventing exfoliation of the transparent conductive film contains a conductivity type determining impurity in a concentration of 1×1019 cm?3 or higher.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: March 9, 2010
    Assignee: Hitachi Cable, Ltd.
    Inventors: Taichiroo Konno, Masahiro Arai
  • Publication number: 20100054752
    Abstract: An optical module comprises: a photoelectric conversion device; at least one of a transmitter LSI and a receiver LSI; one or more memory devices; and an input/output terminal to read and write stored information within the memory device(s). The memory device(s) further comprises: a first memory region where a predetermined driving condition for the optical module or manufacturing information and other basic data inherent to the optical module, or a driving condition or its correction factor table is recorded before shipment as an optimum driving condition for the optical module when installed in a system; and a second memory region where history information such as accumulated use time is recorded after the shipment.
    Type: Application
    Filed: March 5, 2008
    Publication date: March 4, 2010
    Inventors: Ryosuke Kuribayashi, Ichiro Ogura, Masahiro Arai
  • Patent number: 7652281
    Abstract: On a GaAs substrate 1, a light emitting part 4, an intermediate layer 5 of AlGaInP and a current spreading layer 6 are sequentially formed. The light emitting part 4 includes a first conductivity type AlGaInP based lower cladding layer 41, an AlGaInP based light emitting layer 42, and a second conductivity type AlGaInP based upper cladding layer 43 sequentially formed on the GaAs substrate 1. In each layer of the light emitting part 4, a hydrogen concentration is not more than 2×1017 cm?3, a carbon concentration is not more than 2×1016 cm?3, and an oxygen concentration is not more than 2×1016 cm?3. In a partial region or in a total region of the current-spreading layer 6, a hydrogen concentration is not more than 5×1017 cm?3, a carbon concentration is not more than 5×1017 cm?3, and an oxygen concentration is not more than 2×1016 cm?3.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: January 26, 2010
    Assignee: Hitachi Cable, Ltd.
    Inventors: Ken Takahashi, Taichiroo Konno, Masahiro Arai
  • Publication number: 20100015378
    Abstract: A transparent plastic container which is transparent, allows good design and can be used for an anticounterfeit system that determines authenticity by visual check with the use of polarization property. A transparent plastic sheet of a polystyrene-based resin having a total light transmission of 85% or higher and a haze of 7% or less is subjected to vacuum, pneumatic or vacuum/pneumatic forming at a sheet temperature ranging from a glass transition temperature plus 50 degrees C. to a glass transition temperature plus 130 degrees C., thereby obtaining a transparent plastic container having a planar portion with a strain amount of 150 nm or less.
    Type: Application
    Filed: July 11, 2007
    Publication date: January 21, 2010
    Applicant: NHK SPRING CO., LTD.
    Inventors: Itsuo Takeuchi, Tokio Sakauchi, Mutsumi Sasaki, Tomoyoshi Sakamoto, Masahiro Arai, Rie Maejima