Patents by Inventor Masahiro Arai
Masahiro Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7884381Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.Type: GrantFiled: July 29, 2009Date of Patent: February 8, 2011Assignee: Hitachi Cable, Ltd.Inventors: Masahiro Arai, Kazuyuki Iizuka
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Publication number: 20110007099Abstract: Provided is an inverter circuit capable of suppressing an increase in EMI level. In at least one embodiment, the inverter circuit includes: a drive circuit for outputting a pulse signal; a transformer for outputting a drive signal corresponding to the pulse signal to a fluorescent lamp, the transformer including a secondary winding having one end connected to the fluorescent lamp; a detection control circuit for detecting a detection signal corresponding to the drive signal supplied to the fluorescent lamp; a wiring line connecting another end of the secondary winding of the transformer and the detection control circuit; and a wiring line provided together with the wiring line so that magnetic fields generated are cancelled out each other.Type: ApplicationFiled: November 10, 2008Publication date: January 13, 2011Applicant: Sharp Kabushiki KaishaInventor: Masahiro Arai
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Publication number: 20100308301Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.Type: ApplicationFiled: April 15, 2010Publication date: December 9, 2010Applicant: Hitachi Cable, Ltd.Inventors: Tsunehiro Unno, Katsuya Akimoto, Masahiro Arai
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Publication number: 20100289420Abstract: A lighting device (8) including a cold-cathode fluorescent tube (light source) (9) includes an inverter circuit (16) connected to the cold-cathode fluorescent tube (9) and configured so as to driving the cold-cathode fluorescent tube (9), using PWM dimming. The inverter circuit (16) drives the cold-cathode fluorescent tube (9) while a dimming signal in the PWM dimming and a driving signal for driving the cold-cathode fluorescent tube (9) are synchronized.Type: ApplicationFiled: October 3, 2008Publication date: November 18, 2010Applicant: SHARP KABUSHIKI KAISHAInventor: Masahiro Arai
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Publication number: 20100207146Abstract: A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected.Type: ApplicationFiled: January 20, 2010Publication date: August 19, 2010Applicant: HITACHI CABLE, LTD.Inventors: Kazuyuki IIZUKA, Masahiro ARAI
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Patent number: 7747799Abstract: Data transfer is performed to and from a host computer using a first block as the minimum unit. Data transfer is performed to and from a storage area using a second block as the minimum unit. A second block set of the storage area stores data obtained from performing data conversion processes that change the size of the data itself, with a first block set as the unit. Here a correspondence relationship is generated between the first block set and the second block set. In response to a read request from the host computer, a second block set, which corresponds to the first block set that includes the first block that is requested, is read, a reverse-conversion process is performed, and the data is sent to the host computer.Type: GrantFiled: May 19, 2008Date of Patent: June 29, 2010Assignee: Hitachi, Ltd.Inventors: Yutaka Nakagawa, Masahiro Arai
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Publication number: 20100156952Abstract: A lighting device for a display device includes a light source and a light source control device arranged to control the light source. The light source control device is arranged to generate a pulse signal as a light source control signal Vcon to control the light source. The light source control signal Vcon includes pulses, which individually have different shapes.Type: ApplicationFiled: December 25, 2007Publication date: June 24, 2010Applicant: SHARP KABUSHIKI KAISHAInventor: Masahiro Arai
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Publication number: 20100149789Abstract: A lighting device for a display device includes a light source and a chassis arranged to cover the light source. The chassis includes one of a groove section and an opening section located directly below the light source. The one of a groove section and an opening section has a relatively small width at an area directly below a low voltage area of the light source, compared to at an area directly below a high voltage area of the light source.Type: ApplicationFiled: December 17, 2007Publication date: June 17, 2010Applicant: SHARP KABUSHIKI KAISHAInventor: Masahiro Arai
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Patent number: 7728340Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.Type: GrantFiled: July 12, 2006Date of Patent: June 1, 2010Assignee: Hitachi Cable, Ltd.Inventors: Tsunehiro Unno, Katsuya Akimoto, Masahiro Arai
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Publication number: 20100128070Abstract: A lighting device for a display device includes a light source and a chassis arranged to cover the light source. The light source includes a high voltage area to be subjected to relatively high voltage, and a low voltage area to be subjected to relatively low voltage. The chassis includes a distance providing mechanism arranged to provide a vertical distance between the chassis and the light source, so that the vertical distance is relatively large at the high voltage area of the light source and relatively small at the low voltage area of the light source.Type: ApplicationFiled: December 25, 2007Publication date: May 27, 2010Applicant: SHARP KABUSHIKI KAISHAInventor: Masahiro Arai
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Patent number: 7714343Abstract: An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.Type: GrantFiled: February 4, 2008Date of Patent: May 11, 2010Assignee: Hitachi Cable, Ltd.Inventors: Tsunehiro Unno, Masahiro Arai
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Patent number: 7692203Abstract: A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.Type: GrantFiled: October 19, 2007Date of Patent: April 6, 2010Assignee: Hitachi Cable, Ltd.Inventors: Taichiroo Konno, Kazuyuki Iizuka, Masahiro Arai
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Publication number: 20100078659Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.Type: ApplicationFiled: September 25, 2009Publication date: April 1, 2010Applicant: HITACHI CABLE, LTD.Inventors: Kazuyuki Iizuka, Masahiro Arai
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Patent number: 7683378Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??)??(2), and 0.5<?<0.9??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.Type: GrantFiled: February 23, 2006Date of Patent: March 23, 2010Assignee: Hitachi Cable, Ltd.Inventors: Manabu Kako, Takehiko Tani, Taiichiro Konno, Masahiro Arai
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Publication number: 20100065869Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.Type: ApplicationFiled: July 29, 2009Publication date: March 18, 2010Applicant: HITACHI CABLE, LTD.Inventors: Masahiro Arai, Kazuyuki Iizuka
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Publication number: 20100065870Abstract: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate is provided at an opposite side of the reflecting layer with respect to a side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. An adhesion layer is provided at a surface of the supporting substrate at an opposite side with respect to a side of the metal bonding layer. A back surface electrode of an alloy contacts with a surface of the adhesion layer at an opposite side with respect to a surface contacting to the supporting substrate.Type: ApplicationFiled: July 29, 2009Publication date: March 18, 2010Applicant: HITACHI CABLE, LTD.Inventors: Masahiro Arai, Kazuyuki Ilzuka
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Patent number: 7675072Abstract: In a light emitting diode, a light-emitting region is including an active layer provided between a first conductivity type cladding layer formed on the semiconductor substrate and a second conductivity type cladding layer. A transparent conductive film made of a metal oxide is located over the light-emitting region. A layer for preventing exfoliation of the transparent conductive film, the preventing layer being made of a compound semiconductor contains at least aluminum and is located between the light-emitting region and the transparent conductive film. The layer for preventing exfoliation of the transparent conductive film contains a conductivity type determining impurity in a concentration of 1×1019 cm?3 or higher.Type: GrantFiled: December 12, 2007Date of Patent: March 9, 2010Assignee: Hitachi Cable, Ltd.Inventors: Taichiroo Konno, Masahiro Arai
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Publication number: 20100054752Abstract: An optical module comprises: a photoelectric conversion device; at least one of a transmitter LSI and a receiver LSI; one or more memory devices; and an input/output terminal to read and write stored information within the memory device(s). The memory device(s) further comprises: a first memory region where a predetermined driving condition for the optical module or manufacturing information and other basic data inherent to the optical module, or a driving condition or its correction factor table is recorded before shipment as an optimum driving condition for the optical module when installed in a system; and a second memory region where history information such as accumulated use time is recorded after the shipment.Type: ApplicationFiled: March 5, 2008Publication date: March 4, 2010Inventors: Ryosuke Kuribayashi, Ichiro Ogura, Masahiro Arai
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Patent number: 7652281Abstract: On a GaAs substrate 1, a light emitting part 4, an intermediate layer 5 of AlGaInP and a current spreading layer 6 are sequentially formed. The light emitting part 4 includes a first conductivity type AlGaInP based lower cladding layer 41, an AlGaInP based light emitting layer 42, and a second conductivity type AlGaInP based upper cladding layer 43 sequentially formed on the GaAs substrate 1. In each layer of the light emitting part 4, a hydrogen concentration is not more than 2×1017 cm?3, a carbon concentration is not more than 2×1016 cm?3, and an oxygen concentration is not more than 2×1016 cm?3. In a partial region or in a total region of the current-spreading layer 6, a hydrogen concentration is not more than 5×1017 cm?3, a carbon concentration is not more than 5×1017 cm?3, and an oxygen concentration is not more than 2×1016 cm?3.Type: GrantFiled: August 31, 2007Date of Patent: January 26, 2010Assignee: Hitachi Cable, Ltd.Inventors: Ken Takahashi, Taichiroo Konno, Masahiro Arai
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Publication number: 20100015378Abstract: A transparent plastic container which is transparent, allows good design and can be used for an anticounterfeit system that determines authenticity by visual check with the use of polarization property. A transparent plastic sheet of a polystyrene-based resin having a total light transmission of 85% or higher and a haze of 7% or less is subjected to vacuum, pneumatic or vacuum/pneumatic forming at a sheet temperature ranging from a glass transition temperature plus 50 degrees C. to a glass transition temperature plus 130 degrees C., thereby obtaining a transparent plastic container having a planar portion with a strain amount of 150 nm or less.Type: ApplicationFiled: July 11, 2007Publication date: January 21, 2010Applicant: NHK SPRING CO., LTD.Inventors: Itsuo Takeuchi, Tokio Sakauchi, Mutsumi Sasaki, Tomoyoshi Sakamoto, Masahiro Arai, Rie Maejima