Abstract: A chemically amplified negative resist composition comprising (A) a photoacid generator in the form of an onium salt containing an aromatic sulfonic acid anion having a bulky substituent-bearing aromatic ring structure and a fluorinated substituent and (B) a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with reduced LER and fidelity.

Abstract: The chemically amplified resist composition is excellent in LWR and resolution and can prevent a resist pattern from collapsing in photolithography using high-energy radiation, such as far ultraviolet lithography, EUV lithography, and electron beam (EB) lithography, an onium salt for use therein. The chemically amplified resist composition can form a pattern by using it. The onium salt has the following formula (1).

Abstract: The onium salt is capable of generating an acid with controlled diffusion, a chemically amplified positive resist composition comprising the onium salt. The onium salt contains a fluorinated alkanesulfonic acid anion having an alkyl or fluoroalkyl group and an iodized aromatic ring generates an acid with controlled diffusion. A chemically amplified positive resist composition comprising the onium salt is also provided.

Abstract: The resist composition exhibits a high sensitivity, reduced LWR, and improved CDU. The resist composition can form a pattern by using the resist composition. The resist composition comprises a base polymer of sulfonium salt structure having a trifluoromethoxybenzenesulfonamide, difluoromethoxybenzenesulfonamide, trifluoromethoxybenzenesulfonimide or difluoromethoxybenzenesulfonimide anion bonded to its backbone offers a high sensitivity, reduced LWR and improved CDU.

Abstract: An electronic component includes a substrate, a functional element on the substrate, a first electrode, a support body that is made of an insulator, a cover portion, a second electrode, and a projection. The first electrode is located on the substrate and connected to the functional element. The support body protrudes from the substrate and covers the first electrode. The cover portion opposes the substrate, and a hollow space is defined by the substrate, the support body, and the cover portion. The second electrode is located in a via hole extending through the support body and the cover portion and electrically connected to the first electrode. The projection is located on the first electrode in the via hole.

Abstract: A resist composition comprising a base polymer, a photoacid generator, and a quencher is provided. The base polymer contains a polymer comprising phenolic hydroxy-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. A resist film is processed into a pattern of satisfactory profile exhibiting a high resolution, reduced LER, and rectangularity while the influence of residue defects is restrained.

Abstract: An onium salt having the following formula (1) is provided. In formula (1), one of R13 and R14 is a group having a partial structure of the following formula (1a). Q1 to Q3 are each independently a hydrogen atom, a fluorine atom, or a C1-C6 fluorinated saturated hydrocarbyl group, provided that, when both of Q1 and Q2 are a hydrogen atom, Q3 is a fluorine atom or a C1-C6 fluorinated saturated hydrocarbyl group, and the total number of fluorine atoms in Q1 to Q3 is 2 or more.

Abstract: The resist composition comprises a quencher in the form of a sulfonium salt of trifluoromethoxybenzenesulfonamide or difluoromethoxybenzenesulfonamide. The sulfonium salt of trifluoromethoxybenzenesulfonamide or difluoromethoxybenzenesulfonamide is an effective quencher capable of suppressing acid diffusion. The resist composition exhibits a high sensitivity, reduced LWR, and improved CDU independent of whether it is of positive or negative tone, and a pattern forming process using the same.

Abstract: A method for producing a low-molecular fluorine compound, including a decomposition step for heating a microwave absorber by the irradiation with microwaves in a reaction vessel provided with a carrier gas inlet and a decomposed gas outlet and then bringing the heated microwave absorber into contact with particles of a material containing a fluororesin to decompose the fluororesin into the low-molecular fluorine compound, wherein the carrier gas temperature TI (° C.) at the inlet is set to a temperature lower than the temperature TR (° C.) of the heated microwave absorber. Accordingly, a temperature difference can be provided such that the temperature of a produced gas discharged from the reaction vessel becomes lower than the temperature in the decomposition reaction system, i.e., the temperature of the heated microwave absorber.

Abstract: The resist composition exhibits a high sensitivity, reduced LWR, and improved CDU independent of whether it is of positive or negative tone. The resist composition comprises a sulfonium salt of N-carbonyltrifluoromethoxybenzenesulfonamide, N-carbonyldifluoromethoxybenzenesulfonamide, trifluoromethoxybenzenesulfonimide, and difluoromethoxybenzenesulfonimide as the quencher is provided. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A chemically amplified negative resist composition comprising a polymer comprising repeat units derived from a monomer having a specific hydrating functional group is provided. The chemically amplified negative tone resist composition exhibits a high resolution during pattern formation and forms a pattern having a low LER, pattern fidelity and improved dose margin; and a resist pattern forming process using the resist composition.

Abstract: A sulfonium salt having formula (1) is novel. A chemically amplified resist composition comprising the sulfonium salt as a PAG has advantages including solvent solubility and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation such as KrF or ArF excimer laser, EB or EUV.

Abstract: An acetal modifier affording a group having an oxygen or sulfur-containing cyclic saturated heterocycle serving as a protective group for an aliphatic or aromatic hydroxy group is provided as well as a polymer adapted to turn alkali soluble as a result of deprotection under the action of acid, the polymer comprising repeat units A1 having on side chain a structure including an aromatic hydroxy group protected with an acid labile group. A chemically amplified positive resist composition comprising the polymer is also provided.

Abstract: The resist composition has high sensitivity, improved LWR and CDU, high contrast, excellent resolution. A wide process margin can be obtained by using a sulfonium salt or an iodonium salt containing an arylsulfonic acid anion having an aromatic group substituted with a bromine atom or an iodine atom as an acid generator. The resist composition comprising an acid generator containing an onium salt having the following formula (1).

Abstract: A chemically amplified negative resist composition comprising (A) a photoacid generator in the form of an onium salt of alkane sulfone type having a bulky substituent at ?-position of the sulfo group and a bulky aromatic ring structure in the anion and (B) a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with satisfactory LER and fidelity.

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising repeat units having a phenolic hydroxy group protected with a tertiary ether type acid labile group and an acid generator capable of generating a fluorinated aromatic sulfonic acid. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.

Abstract: An electronic component includes a substrate, a functional element on the substrate, a support body, a covering portion, and a protective layer covering the covering portion. The support body is provided on the substrate and around a region in which the functional element is located. The covering portion faces the substrate and is supported by the support body. The substrate, the support body, and the covering portion define a hollow space. The functional element is located in the hollow space. In the support body, a surface opposite to a surface facing the substrate is a first surface, and a portion of the protective layer is in contact with the first surface of the support body without the covering portion being interposed.

Abstract: The chemically amplified negative resist composition has improved in resolution during pattern formation, which can form a resist pattern having improved LER, fidelity, and dose margin. The chemically amplified negative resist composition comprises a polymer comprising repeat units derived from a monomer having a dehydrating functional group is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, fidelity, and dose margin.

Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.

Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.