Patents by Inventor Masahiro Katayama

Masahiro Katayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190260057
    Abstract: A fuel cell vehicle includes: a stack case accommodating a fuel cell stack; and a PCU that is disposed to face the stack case and is coupled to the stack case via bus bars. A through-hole is formed in a top plate of the stack case facing the PCU. The PCU is also coupled and fixed to a vehicle body via a coupling member.
    Type: Application
    Filed: February 7, 2019
    Publication date: August 22, 2019
    Inventor: Masahiro KATAYAMA
  • Publication number: 20190244981
    Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
    Type: Application
    Filed: March 22, 2019
    Publication date: August 8, 2019
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masahiro KATAYAMA, Masataka NAKADA
  • Patent number: 10373981
    Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: August 6, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masataka Nakada, Masahiro Katayama
  • Patent number: 10361258
    Abstract: Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element faulted over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.
    Type: Grant
    Filed: March 21, 2018
    Date of Patent: July 23, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Shingo Eguchi, Yoshiaki Oikawa, Ami Nakamura, Satoshi Seo, Kaoru Hatano
  • Patent number: 10345668
    Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: July 9, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masataka Nakada, Masahiro Katayama, Seiji Yasumoto, Hiroki Adachi, Masataka Sato, Koji Kusunoki, Yoshiharu Hirakata
  • Publication number: 20190181486
    Abstract: A fuel cell module can prevent excessive extending of crack in a cleavage part when the cleavage part cleaves to reduce internal pressure of the housing that stores the fuel cell stack and can prevent the exposure of a high-voltage part inside of the housing. The fuel cell module includes a fuel cell stack and a housing that stores the fuel cell stack. The housing includes a partition wall, a cleavage part on the partition wall that cleaves when the internal pressure of the housing increases to a predetermined pressure, a high-rigidity part on the partition wall to surround the cleavage part, and a plurality of elongated protrusions on the partition wall outside of the high-rigidity part. The strength of the cleavage part is lower than the elongated protrusions and the strength of the high-rigidity part is higher than the elongated protrusions and can prevent extension of a crack in the cleavage part.
    Type: Application
    Filed: November 19, 2018
    Publication date: June 13, 2019
    Inventor: Masahiro KATAYAMA
  • Publication number: 20190176268
    Abstract: A method for roughening a surface of a metal molded body which can be used as an intermediate for manufacturing a composite molded body of a metal molded body with a resin, a rubber, a metal, or the like is provided. The method for roughening a metal molded body surface includes a step of irradiating the surface of the metal molded body with laser light at an irradiation rate of 2000 mm/sec or more with an energy density of 1 MW/cm2 or more using a laser apparatus, and the laser light irradiation step is a step of irradiating laser light so that laser light-irradiated portions and non-laser light-irradiated portions are generated alternately when the laser light is irradiated to be in a straight line, a curved line, or a combination of a straight line and a curved line on the surface of the metal molded body to be roughened.
    Type: Application
    Filed: August 31, 2017
    Publication date: June 13, 2019
    Inventors: Masahiko ITAKURA, Masahiro KATAYAMA, Takayuki UNO
  • Patent number: 10249645
    Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: April 2, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masahiro Katayama, Masataka Nakada
  • Patent number: 10217776
    Abstract: A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: February 26, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Ami Sato, Yukinori Shima
  • Patent number: 10199394
    Abstract: Provided is a display device with high display quality. The display device includes a transistor over a substrate, an inorganic insulating film over the transistor, an organic insulating film over the inorganic insulating film, a capacitor electrically connected to the transistor, and a pixel electrode over the organic insulating film. The transistor includes a gate electrode over the substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. The capacitor includes a metal oxide film over the gate insulating film, the inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. The pixel electrode is formed of a second light-transmitting conductive film and in contact with one of the pair of conductive films and the first light-transmitting conductive film.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: February 5, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroyuki Miyake, Masahiro Katayama
  • Publication number: 20190001760
    Abstract: In a pneumatic tire, a suppressing member to suppress cavity resonance is fixed to a tire inner face. The suppressing member includes a bulge portion bulging further toward a tire radial direction inner side than the tire inner face so as to provide a space between the bulge portion and the tire inner face.
    Type: Application
    Filed: December 6, 2016
    Publication date: January 3, 2019
    Inventors: Yoshihide KOUNO, Masahiro KATAYAMA, Keiichi HASEGAWA, Yoshifumi MATSUMOTO
  • Publication number: 20180374957
    Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.
    Type: Application
    Filed: August 23, 2018
    Publication date: December 27, 2018
    Inventors: Masahiro KATAYAMA, Yasutaka NAKAZAWA, Masatoshi YOKOYAMA, Masahiko HAYAKAWA, Kenichi OKAZAKI, Shunsuke KOSHIOKA
  • Patent number: 10134781
    Abstract: A semiconductor device has an insulating surface provided with a transistor and a capacitor. The transistor includes a gate electrode, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film between the gate electrode and the oxide semiconductor film, and a first conductive film serving as a pair of electrodes in contact with the oxide semiconductor film. An oxide insulating film in contact with the oxide semiconductor film, a metal oxide film over the oxide insulating film, and a second conductive film serving as a pixel electrode which is in an opening in the metal oxide film and is in contact with the first conductive film are provided. The capacitor includes a film having conductivity over the gate insulating film, the second conductive film, and the metal oxide film provided between the film having conductivity and the second conductive film.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: November 20, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Masahiro Katayama, Masami Jintyou
  • Patent number: 10115631
    Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: October 30, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masahiro Katayama
  • Publication number: 20180309150
    Abstract: A fuel cell unit includes a fuel cell stack, an electrical device, a harness connected to the electrical device, and a casing incorporating the fuel cell stack, the electrical device, and the harness. The casing includes a first accommodation portion, a second accommodation portion, and a partition wall provided with a first communication hole through which the harness passes, the first accommodation portion accommodating the fuel cell stack, the second accommodation portion accommodating the electrical device, the partition wall partitioning the first accommodation portion and the second accommodation portion, and the partition wall is provided with at least one second communication hole through which the first accommodation portion and the second accommodation portion communicate with each other, in addition to the first communication hole.
    Type: Application
    Filed: March 26, 2018
    Publication date: October 25, 2018
    Inventors: Hiroki SUMIKAWA, Hiroyuki SEKINE, Masahiro KATAYAMA, Masahiko MORINAGA
  • Patent number: 10103274
    Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: October 16, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Chieko Misawa, Yuka Yokoyama, Hironobu Takahashi, Kenichi Okazaki
  • Patent number: 10096721
    Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: October 9, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masataka Nakada, Masahiro Katayama
  • Publication number: 20180275474
    Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.
    Type: Application
    Filed: May 24, 2018
    Publication date: September 27, 2018
    Inventors: Masataka NAKADA, Masahiro KATAYAMA, Seiji YASUMOTO, Hiroki ADACHI, Masataka SATO, Koji KUSUNOKI, Yoshiharu HIRAKATA
  • Publication number: 20180257262
    Abstract: [Problem] To provide a propylene-based resin-adhered fiber bundle having an enhanced binding force between a carbon long fiber bundle and a propylene-based resin by associating a carbon fiber concentration and a fiber bundle diameter with each other. [Means for solution] A propylene-based resin-adhered carbon fiber bundle prepared by cutting a carbon fiber bundle integrated with a propylene-based resin adhered thereto, wherein: the propylene-based resin contains a base polymer selected from a propylene homopolymer and a propylene copolymer, and an acid group-containing propylene-based resin and/or an amino group-containing propylene-based resin; the carbon fiber bundle has a sizing agent adhered on a surface thereof; and an outer diameter is 2.8 to 4.2 mm, a carbon fiber concentration is 5 to 25 mass % and a length is 4 to 50 mm.
    Type: Application
    Filed: September 13, 2016
    Publication date: September 13, 2018
    Inventor: Masahiro KATAYAMA
  • Publication number: 20180212006
    Abstract: Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are fowled over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element faulted over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.
    Type: Application
    Filed: March 21, 2018
    Publication date: July 26, 2018
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Shingo Eguchi, Yoshiaki Oikawa, Ami Nakamura, Satoshi Seo, Kaoru Hatano