Patents by Inventor Masahiro Katayama

Masahiro Katayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170102598
    Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 13, 2017
    Inventors: Masataka NAKADA, Masahiro KATAYAMA, Seiji YASUMOTO, Hiroki ADACHI, Masataka SATO, Koji KUSUNOKI, Yoshiharu HIRAKATA
  • Patent number: 9601634
    Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: March 21, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Chieko Misawa, Yuka Yokoyama, Hironobu Takahashi, Kenichi Okazaki
  • Publication number: 20170047450
    Abstract: A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween.
    Type: Application
    Filed: September 29, 2016
    Publication date: February 16, 2017
    Inventors: Shunpei YAMAZAKI, Masahiro KATAYAMA, Kenichi OKAZAKI, Jun KOYAMA
  • Publication number: 20170018578
    Abstract: A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.
    Type: Application
    Filed: September 30, 2016
    Publication date: January 19, 2017
    Inventors: Shunpei YAMAZAKI, Masahiro KATAYAMA, Ami SATO, Yukinori SHIMA
  • Publication number: 20160336352
    Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
    Type: Application
    Filed: July 27, 2016
    Publication date: November 17, 2016
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masahiro KATAYAMA, Masataka NAKADA
  • Patent number: 9478535
    Abstract: A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: October 25, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Ami Sato, Yukinori Shima
  • Patent number: 9461126
    Abstract: A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: October 4, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Katayama, Kenichi Okazaki, Jun Koyama
  • Patent number: 9443876
    Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
    Type: Grant
    Filed: January 26, 2015
    Date of Patent: September 13, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masahiro Katayama, Masataka Nakada
  • Publication number: 20160254291
    Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
    Type: Application
    Filed: May 11, 2016
    Publication date: September 1, 2016
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masahiro KATAYAMA
  • Patent number: 9349751
    Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: May 24, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masahiro Katayama
  • Publication number: 20160126493
    Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.
    Type: Application
    Filed: January 8, 2016
    Publication date: May 5, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Kaoru HATANO, Masahiro KATAYAMA, Shingo EGUCHI, Yoshiaki OIKAWA, Ami NAKAMURA
  • Patent number: 9240525
    Abstract: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: January 19, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kaoru Hatano, Masahiro Katayama, Shingo Eguchi, Yoshiaki Oikawa, Ami Nakamura
  • Patent number: 9233514
    Abstract: The tread surface of a tire according to the present invention is molded with a tire mold having a tread molding surface, and at least a portion of the tread molding surface is formed by projecting spherical projection material having a predetermined sphericity and causing the spherical projection material to collide.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: January 12, 2016
    Assignee: BRIDGESTONE CORPORATION
    Inventors: Hiroyuki Katsuno, Ryoichi Watabe, Masahiro Katayama
  • Publication number: 20150270403
    Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.
    Type: Application
    Filed: March 17, 2015
    Publication date: September 24, 2015
    Inventors: Masahiro KATAYAMA, Yasutaka NAKAZAWA, Masatoshi YOKOYAMA, Masahiko HAYAKAWA, Kenichi OKAZAKI, Shunsuke KOSHIOKA
  • Publication number: 20150221775
    Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.
    Type: Application
    Filed: January 30, 2015
    Publication date: August 6, 2015
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masataka NAKADA, Masahiro KATAYAMA
  • Publication number: 20150221679
    Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.
    Type: Application
    Filed: February 3, 2015
    Publication date: August 6, 2015
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masataka NAKADA, Masahiro KATAYAMA
  • Publication number: 20150221678
    Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
    Type: Application
    Filed: January 26, 2015
    Publication date: August 6, 2015
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masahiro KATAYAMA, Masataka NAKADA
  • Publication number: 20150171115
    Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
    Type: Application
    Filed: December 9, 2014
    Publication date: June 18, 2015
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masahiro KATAYAMA
  • Publication number: 20150155387
    Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.
    Type: Application
    Filed: December 1, 2014
    Publication date: June 4, 2015
    Inventors: Shunpei Yamazaki, Masahiro KATAYAMA, Chieko MISAWA, Yuka YOKOYAMA, Hironobu TAKAHASHI, Kenichi OKAZAKI
  • Publication number: 20150153599
    Abstract: To provide a display device in which plural kinds of circuits are formed over one substrate and plural kinds of transistors corresponding to characteristics of the plural kinds of circuits are provided. The display device includes a pixel portion and a driver circuit that drives the pixel portion over one substrate. The pixel portion includes a first transistor including a first oxide semiconductor film. The driver circuit includes a second transistor including a second oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film are formed over one insulating surface. A channel length of the first transistor is longer than a channel length of the second transistor. The channel length of the first transistor is greater than or equal to 2.5 micrometer.
    Type: Application
    Filed: November 25, 2014
    Publication date: June 4, 2015
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masahiro KATAYAMA