Abstract: A gas sensor includes a first heating element and a second heating element that is formed around the periphery of the first heating element and has a wider forming area than the first heating element. A gas amount is measured by heating the first heating element to a predetermined temperature, in which the second heating element is heated when the gas sensor is activated, and the first heating element is heated to the predetermined temperature after a heat value of the first heating element is restricted for a predetermined period of time.

Abstract: In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5.

Abstract: According to an embodiment of the present invention, the workpiece holding body 20 for surface processing includes the holder 21 and the adhesive sheet 22. The adhesive sheet 22 includes the first surface 22a (the first adhesive layer 221) and the second surface 22b (the second adhesive layer 222), the first surface 22a (the first adhesive layer 221) being bonded to the holder 21 at a first adhesive force, the second surface 22b (the second adhesive layer 222) being capable of holding a workpiece (the component main-body 110) at a second adhesive force, the second adhesive force being higher than the first adhesive force.

Abstract: It is possible to prevent deterioration of a redistribution layer due to exposure of the redistribution layer from an upper insulating film and the resultant reaction with moisture, ions, or the like. As means thereof, in a semiconductor device having a plurality of wiring layers formed in an element formation region and having a redistribution layer connected with a pad electrode which is an uppermost wiring layer, a dummy pattern is arranged in a region closer to a scribe region than the redistribution layer.

Abstract: Provided is an airflow meter with good precision. In the airflow meter, which is provided with an arithmetic circuit that incorporates air temperature and a sensor module temperature as adjustment elements for the output characteristics of the airflow meter, corrects the output characteristics in accordance with the temperature difference between the air temperature and the sensor module temperature and reduces the correction amount when the absolute value of the difference between the air temperature and the sensor module temperature is small.

Abstract: The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. Then the upper surface and side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.

Abstract: To provide a gas sensor device having improved measurement accuracy. This gas sensor device is provided with: a sensor element that detects the concentration of a gas by means of heat dissipation from a heat generating body; and a cover with which the sensor element is covered. The cover has a plurality of ventilation sections, which are disposed by being separated with each other in the direction perpendicular to the flowing direction of the gas, and the sensor element is disposed between the ventilation sections.

Abstract: A semiconductor chip having a pad, a protective element, and an internal circuit for providing a semiconductor chip having a protective circuit with high noise resistance, wherein the semiconductor chip is characterized in that the resistance value of metal wiring on a path reaching the pad and the protective element is higher than the resistance value of the protective element.

Abstract: To provide a gas sensor apparatus capable of preventing clogging of a gas intake port due to particles, droplets, or the like, of a gas and maintaining measurement accuracy for a long time, a gas sensor apparatus 1 includes a housing 3. The housing 3 includes an expansion chamber 6 communicating with an air intake passage 2 via an air intake port 8, and a measurement chamber 5 communicating with the expansion chamber 6 via a communicating portion 7. A double squeezing structure including the gas intake port 8 and the communicating portion 7 is provided, and two stages of regions where the volume expands between the gas intake port 8 and the measurement chamber 5 are provided. As a result, the movement of the air in the measurement chamber 5 is decreased. It is possible to provide a structure in which the capacity of the gas intake port 8 is increased to avoid clogging of the gas intake port due to particles or droplets.

Abstract: The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. Then the upper surface and side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.

Abstract: A radioprotective unwoven fabric is a sheet in which metal fibers are three-dimensionally and randomly stacked, the metal fibers each comprising a metal material having a specific gravity higher than a specific gravity of lead. The metal fibers may comprise a tungsten wire.

Abstract: A gas sensor device of the present invention, aiming sufficient correction results of an internal combustion engine under different operation conditions, includes a concentration sensor for measuring the concentration of gas and a pressure sensor for measuring the pressure of the gas. The gas sensor device also includes a measuring chamber incorporating the concentration sensor and the pressure sensor, and a processing circuit unit that adjusts a signal of the concentration sensor using a signal of the pressure sensor. The processing circuit unit may preferably be provided with a response speed adjusting unit that brings the response speed of a detected signal of the pressure sensor close to the response speed of a detected signal of the concentration sensor.

Abstract: In order to achieve measurement with high precision by suitably correcting a measurement error, a hot-type fluid measurement device includes a module having a passage section and a circuit chamber, a sensor element disposed in the passage section, and a circuit element disposed in the circuit chamber. The circuit element includes a correction section that corrects flow rate information detected by the sensor element from temperature difference information of a temperature of a fluid and a temperature of the module, and at least one temperature of the temperature of the fluid or the temperature of the module.

Abstract: Provided is a sensor device that suppresses a malfunction caused by a negative surge or a voltage drop. A sensor device includes a sensor element having an electrical characteristic varying according to a physical amount, a signal processing circuit configured to process an output signal of the sensor element, a transistor element interposed between a power source terminal and the signal processing circuit, a resistive element configured to connect a drain and a gate of the transistor element, or a collector and a base of the transistor element, and an element having threshold voltage for connecting the gate or the base of the transistor element to a GND. The element regulates current flowing from the resistive element in a direction of the GND, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage.

Abstract: In order to provide a thermal mass flowmeter which makes higher accuracy of gas flowrate measurement possible while reliability in the thermal mass flowmeter is ensured (while deterioration or breakage caused by droplet adhesion is prevented), the thermal mass flowmeter according to the present invention has a heating element for generating heat by conduction, a temperature detection bridge circuit for detecting a temperature of the heating element, and a sensor element driving circuit portion connected to the heating element and the temperature detection bridge circuit and executing conduction control to the heating element, in which the sensor element driving circuit portion has an output mechanism and an output impedance adjustment mechanism and the output impedance adjustment mechanism is disposed between the output mechanism and the heating element and its output impedance is higher than an electric resistance value of the heating element and less than 1 M?.

Abstract: A film formation method is one for forming an organic layer comprising a fluorine-containing resin on an inorganic layer (3) formed on a substrate and comprising an inorganic substance. In the method, for the formation of the inorganic layer, a reactive sputtering procedure using water vapor as a reactive gas is carried out to form the inorganic layer on the substrate. Subsequently, the organic layer is formed on the inorganic layer. A film formation device enables the implementation of the film formation method.

Abstract: A touch panel of the present invention includes: a cover substrate; a connector being provided on an area of the cover substrate other than a display area, and including a color layer and a shield layer, the shield layer being formed from a multilayer structure, the multilayer structure being configured so that a metal layer and a dielectric layer which is thicker than the metal layer are alternately laminated; and a touch panel substrate being arranged to face the cover substrate with the connector interposed therebetween.

Abstract: A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. The anode unit includes a first plate including first through holes and a second plate including second through holes that are larger than the first through holes. The second plate is located between the first plate and the cathode stage. The first plate produces a flow of the gas through the first through holes. The gas that has passed through the first through holes flows through the second through holes into an area between the second plate and the cathode stage. A distance between the first plate and the second plate is 10 mm or greater and 50 mm or less.

Abstract: A bonding pad of a semiconductor chip in a QFP includes, in its exposed portion, a via disposition area comprising: a first segment that connects a corner and a first point; a second segment that connects the corner and a second point; and an arc that connects the first point and the second point and forms a convex shape toward the corner. Further, in a plan view of the bonding pad, at least a part of a via is disposed so as to overlap with the via disposition area.

Abstract: A metal fiber included in a fiber product includes a tungsten wire having a diameter less than or equal to 22 ?m. The tungsten wire may have, for example, a diameter less than or equal to 18 ?m. The tungsten wire may have, for example, a diameter within a range from 20% less than 13 ?m to 20% greater than 13 ?m. In addition, the tungsten wire may have, for example, a diameter greater than or equal to 5 ?m. Further, the tungsten wire may include, for example, pure tungsten. Moreover, the metal fiber may be, for example, a metal thread including a false-twisted yarn which is made of a chemical fiber and is wound.