Patents by Inventor Masahiro Orita

Masahiro Orita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200035783
    Abstract: The semiconductor device includes a semiconductor substrate of first conductivity type including a cell area and a peripheral area surrounding cell area on a principal surface thereof, a first diffusion layer which is disposed in peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type, an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer, and a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and includes a linear portion having a first width and a curved portion having a portion with a second width greater than the first width.
    Type: Application
    Filed: July 19, 2019
    Publication date: January 30, 2020
    Applicant: LAPIS SEMICONDUCTOR CO., LTD
    Inventors: Kenichi Furuta, Toshifumi Kobe, Toshiyuki Orita, Tsuyoshi Inoue, Tomoko Yonekura, Masahiro Haraguchi, Yoshinobu Takeshita, Kiyofumi Kondo
  • Patent number: 8212260
    Abstract: To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm?3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: July 3, 2012
    Assignee: Hoya Corporation
    Inventors: Masahiro Orita, Takashi Narushima, Hiroaki Yanagida
  • Patent number: 7880377
    Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.
    Type: Grant
    Filed: January 20, 2005
    Date of Patent: February 1, 2011
    Assignee: Hoya Corporation
    Inventors: Masahiro Orita, Hiroshi Kawazoe, Satoshi Kobayashi, Hiroaki Yanagita, Morihiro Niimi, Yuki Tani, Misaki Hatsuda
  • Publication number: 20100078626
    Abstract: To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm?3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.
    Type: Application
    Filed: September 28, 2007
    Publication date: April 1, 2010
    Applicant: Hoya Corporation
    Inventors: Masahiro Orita, Takashi Narushima, Hiroaki Yanagida
  • Patent number: 7612432
    Abstract: It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-?-?-?)Cu?Mg?Cd?S(1-x-y)SexTey (0.004???0.4, ??0.2, ??0.2, 0?x?1, 0?y?0.2, and x+y?1).
    Type: Grant
    Filed: February 3, 2005
    Date of Patent: November 3, 2009
    Assignee: Hoya Corporation
    Inventors: Hiroaki Yanagita, Hiroshi Kawazoe, Masahiro Orita
  • Publication number: 20080122341
    Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.
    Type: Application
    Filed: January 20, 2005
    Publication date: May 29, 2008
    Applicant: HOYA CORPORATION
    Inventors: Masahiro Orita, Hiroshi Kawazoe, Satoshi Kobayashi, Hiroaki Yanagita, Morihiro Niimi, Yuki Tani, Misaki Hatsuda
  • Patent number: 7355213
    Abstract: As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula AxByCz where A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20˜X˜0.35, 0.17˜Y˜0.30, and 0.45˜Z˜0.55.
    Type: Grant
    Filed: April 23, 2004
    Date of Patent: April 8, 2008
    Assignee: Hoya Corporation
    Inventors: Hiroshi Kawazoe, Hiroaki Yanagita, Masahiro Orita
  • Patent number: 7323356
    Abstract: Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: January 29, 2008
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Masahiro Orita, Hidenori Hiramatsu, Kazushige Ueda
  • Publication number: 20070181904
    Abstract: It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-?-?-?)Cu?Mg?Cd?S(1-x-y)SexTey (0.004???0.4, ??0.2, ??0.2, 0?x?1, 0?y?0.2, and x+y?1).
    Type: Application
    Filed: February 3, 2005
    Publication date: August 9, 2007
    Inventors: Hiroaki Yanagita, Hiroshi Kawazoe, Masahiro Orita
  • Publication number: 20060261350
    Abstract: A light-emitting diode with high luminous efficiency is provided which is free from deformation or defects of a crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer made of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, that is, an n-electrode and a hole implanting electrode, that is, a p-electrode joined to the light-emitting layer.
    Type: Application
    Filed: April 23, 2004
    Publication date: November 23, 2006
    Inventors: Hiroshi Kawazoe, Masahiro Orita, Hiroaki Yanagita, Satoshi Kobayashi
  • Patent number: 7061014
    Abstract: Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: June 13, 2006
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kazushige Ueda, Masahiro Hirano, Toshio Kamiya
  • Publication number: 20050158993
    Abstract: Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.
    Type: Application
    Filed: February 19, 2003
    Publication date: July 21, 2005
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Masahiro Orita, Hidenori Hiramatsu, Kazushige Ueda
  • Patent number: 6897560
    Abstract: The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500° C. and an oxygen partial pressure of 0 to 1 Pa.
    Type: Grant
    Filed: July 9, 2001
    Date of Patent: May 24, 2005
    Assignee: Japan Science & Technology Corporation
    Inventors: Hiromichi Ota, Masahiro Orita, Hideo Hosono, Masahiro Hirano
  • Publication number: 20050039670
    Abstract: Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
    Type: Application
    Filed: October 31, 2002
    Publication date: February 24, 2005
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kazushige Ueda, Masahiro Hirano, Toshio Kamiya
  • Patent number: 6821655
    Abstract: A low-resistance ITO thin film having a resistivity on the order of, or lower than 10−4 &OHgr;cm, and a method for manufacturing such a film are disclosed. The ITO thin film is manufactured by depositing ITO on a crystalline substrate by pulsed laser deposition, low-voltage sputtering, oxygen cluster beam deposition, chemical vapor deposition, metal organic chemical vapor deposition, metal organic chemical vapor deposition—atomic layer deposition, or molecule beam epitaxy.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: November 23, 2004
    Assignee: Hoya Corporation
    Inventors: Hiromichi Ohta, Masahiro Orita
  • Patent number: 6806503
    Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
    Type: Grant
    Filed: November 5, 2002
    Date of Patent: October 19, 2004
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kenichi Kawamura, Nobuhiko Sarukura, Msahiro Hirano
  • Publication number: 20030132449
    Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
    Type: Application
    Filed: November 5, 2002
    Publication date: July 17, 2003
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kenichi Kawamura, Nobuhiko Sarukura, Msahiro Hirano
  • Publication number: 20030107098
    Abstract: The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500° C. and an oxygen partial pressure of 0 to 1 Pa.
    Type: Application
    Filed: January 7, 2003
    Publication date: June 12, 2003
    Inventors: Hiromichi Ota, Masahiro Orita, Hideo Hosono, Masahiro Hirano
  • Patent number: 5955178
    Abstract: Electro-conductive oxides showing excellent electro-conductivity, electrodes using the electro-conductive oxide and methods for manufacturing the same are described. The electro-conductive oxides are represented by the general formula: M(1).sub.x M(2).sub.y In.sub.z O.sub.(x+3y/2+3z/2)-d. The above electro-conductive oxides show not only excellent electro-conductivity but also excellent transparency all over the visible region and therefore they are particularly useful as, for example, electrodes for liquid crystal displays, EL displays and solar cells, which require light transmission.
    Type: Grant
    Filed: April 2, 1997
    Date of Patent: September 21, 1999
    Assignee: Hoya Corporation
    Inventors: Masahiro Orita, Hiroyuki Sakai, Megumi Takeuchi, Hiroaki Tanji
  • Patent number: 5843341
    Abstract: Electro-conductive oxides showing excellent electro-conductivity, electrodes using the electro-conductive oxide and methods for manufacturing the same are described. The electro-conductive oxides are represented by the general formula: M(1).sub.x M(2).sub.y In.sub.z O.sub.(x+3y/2+3s/2)-d. The above electro-conductive oxides show not only excellent electro-conductivity but also excellent transparency all over the visible region and therefore they are particularly useful as, for example, electrodes for liquid crystal displays, EL displays and solar cells, which require light transmission.
    Type: Grant
    Filed: April 2, 1997
    Date of Patent: December 1, 1998
    Assignee: Hoya Corporation
    Inventors: Masahiro Orita, Hiroyuki Sakai, Megumi Takeuchi, Hiroaki Tanji