Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

Abstract: Provided is an exposure apparatus that exposes a pattern on a sample, the exposure apparatus including a plurality of blanking electrodes that are provided corresponding to a plurality of charged particle beams and each switch whether the corresponding particle beam irradiates the sample according to an input voltage; an irradiation control section that outputs switching signals for switching blanking voltages supplied respectively to the blanking electrodes; and a measuring section that, for each blanking electrode, measures a delay amount that is from when the switching signal changes to when the blanking voltage changes.

Abstract: Complex and fine patterns may be formed by an exposure apparatus that decreases movement error of a stage including a beam generating section that generates a charged particle beam, a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section, a detecting section that detects a position of the stage section, a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section, and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount.

Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

Abstract: Provided is an exposure apparatus that exposes a pattern on a sample, the exposure apparatus including a plurality of blanking electrodes that are provided corresponding to a plurality of charged particle beams and each switch whether the corresponding particle beam irradiates the sample according to an input voltage; an irradiation control section that outputs switching signals for switching blanking voltages supplied respectively to the blanking electrodes; and a measuring section that, for each blanking electrode, measures a delay amount that is from when the switching signal changes to when the blanking voltage changes.

Abstract: There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region.

Abstract: To use a charged particle beam to form a complex and fine pattern by decreasing movement error of a stage, provided is an exposure apparatus comprising a beam generating section that generates a charged particle beam; a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section; a detecting section that detects a position of the stage section; a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section; and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount. Also provided is an exposure method.

Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

Abstract: There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region.

Abstract: There is provided a sample observing apparatus for observing the surface of a sample by irradiating an electron beam thereto, having an electron gun for irradiating the electron beam to the surface of the sample, a potential control section for adjusting electric potential of the surface of the sample to potential set in advance by applying voltage determined based on an amount of electric charge on the surface of the sample to the sample, an electron detecting section for detecting electrons produced when the electron beam is irradiated to the surface of the sample and an appearance acquiring section for acquiring the appearance of surface of the sample per each spot on the surface based on the electrons detected by the electron detecting section.

Abstract: There is provided a sample observing apparatus for observing the surface of a sample by irradiating an electron beam thereto, having an electron gun for irradiating the electron beam to the surface of the sample, a potential control section for adjusting electric potential of the surface of the sample to potential set in advance by applying voltage determined based on an amount of electric charge on the surface of the sample to the sample, an electron detecting section for detecting electrons produced when the electron beam is irradiated to the surface of the sample and an appearance acquiring section for acquiring the appearance of surface of the sample per each spot on the surface based on the electrons detected by the electron detecting section.

Abstract: A charged particle beam test system has improved voltage measurement accuracy when irradiating a charged particle beam upon predetermined portion of a device under test (DUT) and detecting secondary electron detected therefrom representing a voltage of the irradiated portion of the DUT. The test system includes a DUT driver for supplying a test signal to the DUT to cause the voltage at the irradiated portion and generating a trigger signal, a sampling pulse generator for continuously generating a sampling pulse having a predetermined time interval to drive the charged particle beam, a time difference detector for detecting a time difference between the trigger signal and the sampling pulse, an address data generator for generating address data corresponding to the time difference, and a test result memory for storing measured data representing an amount of the secondary electron emitted from the irradiation portion of the DUT in addresses specified by the address.