Patents by Inventor Masahiro Tabata
Masahiro Tabata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11139175Abstract: A method includes anisotropically etching an etching target layer of a target object through an opening of the target object by generating plasma of a first gas within a processing vessel in which the target object is accommodated; and then forming a film on an inner surface of the opening by repeating a sequence comprising: a first process of supplying a second gas into the processing vessel; a second process of purging a space within the processing vessel; a third process of generating plasma of a third gas containing an oxygen atom within the processing vessel; and a fourth process of purging the space within the processing vessel. The first gas contains a carbon atom and a fluorine atom. The second gas contains an aminosilane-based gas. The etching target layer is a hydrophilic insulating layer containing silicon. Plasma of the first gas is not generated in the first process.Type: GrantFiled: December 20, 2019Date of Patent: October 5, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Toru Hisamatsu, Masahiro Tabata
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Patent number: 11133192Abstract: An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.Type: GrantFiled: December 31, 2019Date of Patent: September 28, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Yoshihide Kihara
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Patent number: 11127598Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.Type: GrantFiled: January 17, 2020Date of Patent: September 21, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Takayuki Hoshi, Masanobu Honda, Masahiro Tabata, Toru Hisamatsu
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Patent number: 11081360Abstract: In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.Type: GrantFiled: November 2, 2017Date of Patent: August 3, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Yoshihide Kihara, Masanobu Honda
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Publication number: 20210050219Abstract: A substrate includes an etching target film as a target of etching and a first film. The first film is formed on the etching target film and is made of a material having an etching rate smaller than an etching rate of the etching target film. The first film has multiple first openings formed at a first distance therebetween in one direction of a surface of the first film. The first film has a second opening formed at an outside of the multiple first openings in the one direction while being spaced apart from an outermost one of the first openings by a second distance equivalent to the first distance. The second opening has a width larger than a width of the first openings and a depth smaller than a depth of the first openings.Type: ApplicationFiled: August 12, 2020Publication date: February 18, 2021Inventors: Masahiro Tabata, Masahiro Tadokoro
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Patent number: 10923332Abstract: A plasma processing method is performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus. The plasma processing apparatus includes a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon. The plasma processing method includes forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position, and performing plasma processing on the substrate after the formation of the organic film.Type: GrantFiled: April 23, 2019Date of Patent: February 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Ryuichi Asako, Masahiro Tabata, Takao Funakubo
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Patent number: 10916420Abstract: A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.Type: GrantFiled: August 29, 2019Date of Patent: February 9, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Maju Tomura, Sho Kumakura, Hironari Sasagawa
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Publication number: 20210025060Abstract: An apparatus for processing a substrate is provided. The apparatus includes a processing apparatus and a controller. The processing apparatus includes a chamber. The controller includes a memory and a processor coupled to the memory. The memory stores computer-executable instructions for controlling the processor to control a process of the processing apparatus. The process includes first forming a first film in a first region of the substrate in the chamber by chemical vapor deposition. The process further includes second forming a second film in a second region of the substrate in the chamber by atomic layer deposition. The first forming and the second forming are performed without moving the substrate out of the chamber.Type: ApplicationFiled: August 21, 2020Publication date: January 28, 2021Applicant: TOKYO ELECTRON LIMITEDInventor: Masahiro TABATA
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Patent number: 10903085Abstract: There is provided a method for etching an organic region of a substrate. In the method, an organic film is formed on a surface in a chamber of a plasma processing apparatus. The surface extends out around a region where the substrate is to be disposed in the chamber of the plasma processing apparatus, and the organic region is etched by chemical species from plasma in the chamber.Type: GrantFiled: April 22, 2019Date of Patent: January 26, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Ryuichi Asako, Masahiro Tabata, Takao Funakubo
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Publication number: 20200381263Abstract: A method of processing a target object is provided. The target object includes a first protrusion portion, a second protrusion portion, and a groove portion provided on a main surface of the target object and defined by the first protrusion portion and the second protrusion portion and an inner surface of the groove portion is included in the main surface of the target object. The method comprises forming a protection film conformally on the main surface of the target object after the forming of the protection film conformally, repeatedly performing a plasma etching on a bottom portion of the groove portion of the target object and performing the forming of the protection film and the performing of the plasma etching N times (N is an integer equal to or larger than 2). The protection film is formed depending on a shape of the groove portion which has been changed by the plasma etching.Type: ApplicationFiled: August 19, 2020Publication date: December 3, 2020Inventors: Masahiro Tabata, Yoshihide Kihara
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Publication number: 20200381265Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.Type: ApplicationFiled: August 21, 2020Publication date: December 3, 2020Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
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Publication number: 20200343091Abstract: Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.Type: ApplicationFiled: July 10, 2020Publication date: October 29, 2020Applicant: TOKYO ELECTRON LIMITEDInventor: Masahiro TABATA
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Patent number: 10781519Abstract: An apparatus for processing a substrate is provided. The apparatus includes a processing apparatus and a controller. The processing apparatus includes a chamber. The controller includes a memory and a processor coupled to the memory. The memory stores computer-executable instructions for controlling the processor to control a process of the processing apparatus. The process includes first forming a first film in a first region of the substrate in the chamber by chemical vapor deposition. The process further includes second forming a second film in a second region of the substrate in the chamber by atomic layer deposition. The first forming and the second forming are performed without moving the substrate out of the chamber.Type: GrantFiled: June 18, 2018Date of Patent: September 22, 2020Assignee: TOKYO ELECTRON LIMITEDInventor: Masahiro Tabata
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Patent number: 10777425Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.Type: GrantFiled: December 21, 2018Date of Patent: September 15, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
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Publication number: 20200273699Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.Type: ApplicationFiled: May 13, 2020Publication date: August 27, 2020Inventors: Sho Kumakura, Masahiro Tabata
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Patent number: 10755944Abstract: An etching method selectively etches a first region of a substrate with respect to a second region of the substrate. At least a portion of the first region, which includes the surface of the first region, is modified by plasma to form a first modified region. At least a portion of the second region, which includes the surface of the second region, is modified by plasma to form a second modified region. The first modified region is selectively etched with respect to the second modified region by plasma.Type: GrantFiled: December 7, 2018Date of Patent: August 25, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Sho Kumakura
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Patent number: 10748766Abstract: Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.Type: GrantFiled: August 24, 2018Date of Patent: August 18, 2020Assignee: TOKYO ELECTRON LIMITEDInventor: Masahiro Tabata
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Publication number: 20200234970Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.Type: ApplicationFiled: January 17, 2020Publication date: July 23, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Takayuki HOSHI, Masanobu HONDA, Masahiro TABATA, Toru HISAMATSU
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Patent number: 10707100Abstract: A substrate processing method includes: selectively forming a first film on a surface of a substrate disposed in a processing container by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.Type: GrantFiled: December 10, 2018Date of Patent: July 7, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu
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Publication number: 20200185238Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.Type: ApplicationFiled: February 19, 2020Publication date: June 11, 2020Inventors: Masahiro Tabata, Sho Kumakura