Abstract: A substrate includes an etching target film as a target of etching and a first film. The first film is formed on the etching target film and is made of a material having an etching rate smaller than an etching rate of the etching target film. The first film has multiple first openings formed at a first distance therebetween in one direction of a surface of the first film. The first film has a second opening formed at an outside of the multiple first openings in the one direction while being spaced apart from an outermost one of the first openings by a second distance equivalent to the first distance. The second opening has a width larger than a width of the first openings and a depth smaller than a depth of the first openings.

Abstract: An etching method for providing an etch profile is provided. The etching method includes preparing a substrate in which a laminate film is formed, the laminate film including silicon oxide films and silicon films stacked in alternation. The etching method includes cooling a surface temperature of the substrate to ?40° C. or less. The etching method includes forming a plasma from gas containing hydrogen and fluorine, based on radio frequency power for plasma formation. The etching method includes etching the laminate film with the formed plasma.

Abstract: In an etching method, a target object temperature is maintained within a range from ?30° C. to 30° C. When a flow rate of an ith fluorocarbon gas in one or multiple fluorocarbon gases is referred to as J(i); a number of fluorine atoms and a number of carbon atoms in the corresponding gas are referred to as M(i) and N(i), respectively; a value calculated by summing J(i)×N(i)/M(i) of all values that i can be is referred to as Ua; a flow rate of a kth hydrogen-containing gas in one or multiple hydrogen-containing gases is referred to as J(k); a number of hydrogen atoms in the corresponding gas is referred to as H(k); and a value calculated by summing J(k)×H(k) of all values that k can be is referred to as Ub, Ua/Ub satisfies a condition of 0.04<Ua/Ub<0.22.

Abstract: A substrate includes an etching target film as a target of etching and a first film. The first film is formed on the etching target film and is made of a material having an etching rate smaller than an etching rate of the etching target film. The first film has multiple first openings formed at a first distance therebetween in one direction of a surface of the first film. The first film has a second opening formed at an outside of the multiple first openings in the one direction while being spaced apart from an outermost one of the first openings by a second distance equivalent to the first distance. The second opening has a width larger than a width of the first openings and a depth smaller than a depth of the first openings.

Abstract: In an etching method, a target object temperature is maintained within a range from ?30° C. to 30° C. When a flow rate of an ith fluorocarbon gas in one or multiple fluorocarbon gases is referred to as J(i); a number of fluorine atoms and a number of carbon atoms in the corresponding gas are referred to as M(i) and N(i), respectively; a value calculated by summing J(i)×N(i)/M(i) of all values that i can be is referred to as Ua; a flow rate of a kth hydrogen-containing gas in one or multiple hydrogen-containing gases is referred to as J(k); a number of hydrogen atoms in the corresponding gas is referred to as H(k); and a value calculated by summing J(k)×H(k) of all values that k can be is referred to as Ub, Ua/Ub satisfies a condition of 0.04<Ua/Ub<0.22.

Abstract: The particle therapy system includes a particle beam generator for generating a particle beam; an irradiation nozzle arranged in a treatment room and irradiating a target with the particle beam; a particle beam transport system communicating the particle beam generator with the irradiation nozzle; an X-ray imaging device arranged in the treatment room and imaging the position of the target through irradiation with X-rays; a dosimeter arranged at a position passed by the particle beam in the irradiation nozzle; and a control apparatus performing control to exclude the measurement result of the X-rays from the measurement result obtained using the dosimeter when the X-rays are emitted during treatment.

Abstract: In a method of manufacturing a semiconductor device using high-NA ArF liquid immersion exposure of a photoresist, a layer arrangement is provided capable of increasing reflection of a reference beam in an oblique incidence autofocus optical system, thereby enhancing autofocus and making it possible to reduce variation in the diameter of a contact hole.

Abstract: The charged particle beam irradiation system includes a charged particle beam generating unit, scanning electromagnets, a beam irradiation apparatus, beam radiation dose measuring instrument(s), and a beam position measuring instrument for obtaining one or both of the position and the width of the beam scanned by the scanning electromagnets. The beam position measuring instrument obtains one or both of the position and the width of the beam for each irradiation spot and determines whether the obtained result is within an allowable range and obtains one or both of the position and the width of the charged particle beam for each split during irradiation to the spot with the charged particle beam regarding a split of which a dose is managed by dividing a part of or all of irradiation spots into irradiation sections and determines whether the obtained result is within an allowable range.

Abstract: There is provided a particle therapy system including: a particle beam generator for generating a particle beam; an irradiation nozzle arranged in a treatment room and irradiating a target with the particle beam; a particle beam transport system 6 communicating the particle beam generator with the irradiation nozzle; an X-ray imaging device arranged in the treatment room and imaging the position of the target through irradiation with X-rays; a dosimeter 8 arranged at a position passed by the particle beam in the irradiation nozzle; and a control apparatus 400 performing control to exclude the measurement result of the X-rays from the measurement result obtained using the dosimeter 8 when the X-rays are emitted during treatment.

Abstract: A stacked type of radiation detector and a calibration method that enables the radiation detector to correct variations in sensor-specific output easily and within a short time, without using a water-phantom dose detector. The radiation detector is equipped with a sensor section including a plurality of sensors arranged in layers in a traveling direction of a particle beam. A dummy absorber has water-equivalent thickness equal to an average water-equivalent thickness of the sensors. A signal-processing unit calculates sensor-specific calibration coefficients using a measurement result obtained during irradiation of the radiation detector with the radiation when electrical signals developed in each sensor are measured, and a measurement result obtained during irradiation of the radiation detector with the radiation when the sensor section is moved in the traveling direction of the radiation, then the dummy absorber is set in place, and electrical signals developed in each sensor are measured.

Abstract: A beam monitor system having a simple configuration for improving a measurement precision specifying a position and the width. A beam monitor system, comprising collection electrodes that include a plurality of groups each having a plurality of adjacent wire electrodes, and detect an ionized particle beam passing therethrough, a first signal processing device that sets one wire electrode in the groups of the collection electrodes as a typical wire electrode, receives a detection signal output from the typical wire electrode to process the signal and a beam monitor controller that obtains a beam position of the ionized particle beam that has passed through the wire electrodes on the basis of a processed signal from the first signal processing device.

Abstract: The charged particle beam irradiation system includes a charged particle beam generating unit, scanning electromagnets, a beam irradiation apparatus, beam radiation dose measuring instrument(s), and a beam position measuring instrument for obtaining one or both of the position and the width of the beam scanned by the scanning electromagnets. The beam position measuring instrument obtains one or both of the position and the width of the beam for each irradiation spot and determines whether the obtained result is within an allowable range and obtains one or both of the position and the width of the charged particle beam for each split during irradiation to the spot with the charged particle beam regarding a split of which a dose is managed by dividing a part of or all of irradiation spots into irradiation sections and determines whether the obtained result is within an allowable range.

Abstract: In high-NA ArF liquid immersion exposure after the 45 nm technology node, particularly, in microfabrication steps such as contact step, variation in the diameter of a contact hole or the like has occurred frequently. A silicon nitride-based insulating film is inserted between a multilayer resist and an insulating film to be processed in a contact step and the like. This makes it possible to reduce variation in the diameter of a contact hole in the contact step and the like.

Abstract: A beam monitor system having a simple configuration for improving a measurement precision specifying a position and the width. A beam monitor system, comprising collection electrodes that include a plurality of groups each having a plurality of adjacent wire electrodes, and detect an ionized particle beam passing therethrough, a first signal processing device that sets one wire electrode in the groups of the collection electrodes as a typical wire electrode, receives a detection signal output from the typical wire electrode to process the signal and a beam monitor controller that obtains a beam position of the ionized particle beam that has passed through the wire electrodes on the basis of a processed signal from the first signal processing device.

Abstract: A charge collection electrode is formed of a plurality of groups each of which is made up of a plurality of adjoining wire electrodes. Further, all the wire electrodes are connected to channels of a signal processing device by the same number of lines as the wire electrodes belonging to one group so that each detection signal outputted from one wire electrode selected from each group is inputted through the same line and so that no two adjoining channels are physically continuous in regard to a certain set of consecutive measurement channels. The signal processing device determines group information indicating to which group the wire electrodes that sent the inputted detection signals belong and outputs a processing signal including the group information to a beam monitor controller. The beam monitor controller determines the position and the beam width of the charged particle beam that passed through the wire electrodes.

Abstract: A charge collection electrode is formed of a plurality of groups each of which is made up of a plurality of adjoining wire electrodes. Further, all the wire electrodes are connected to channels of a signal processing device by the same number of lines as the wire electrodes belonging to one group so that each detection signal outputted from one wire electrode selected from each group is inputted through the same line and so that no two adjoining channels are physically continuous in regard to a certain set of consecutive measurement channels. The signal processing device determines group information indicating to which group the wire electrodes that sent the inputted detection signals belong and outputs a processing signal including the group information to a beam monitor controller. The beam monitor controller determines the position and the beam width of the charged particle beam that passed through the wire electrodes.

Abstract: The present invention provides, at low cost, a multilayer radiation detector whose position relative to a beam axis can be verified. The radiation detector includes a plurality of sensors that react to radiation and are stacked in parallel inlayers in a traveling direction of the radiation. The sensors are each sectioned into a central region including the center of the sensor and another region surrounding the central region. The radiation detector independently measures signals measured by the central regions and signals measured by the other regions. Thus, the position of the radiation detector can be verified.

Abstract: A loading apparatus for loading raw material into a processing apparatus includes an accommodation section accommodating the raw material, upstream and downstream paths through which the raw material is fed in an airtight state into the processing apparatus, a feeding mechanism that feeds in an airtight state the raw material from the accommodation section to the upstream path, a joint section that separates and joins the upstream and downstream paths, and a closing section, positioned in the second path, that can be opened and closed to maintain the processing apparatus and a portion of the downstream path located downstream of the closing section in an airtight state when the joint section separates the upstream and downstream paths. The downstream path is extendable and contractible to move its downstream end with respect to the joint section while the upstream and downstream paths remain joined.

Abstract: Disclosed is a beam monitor system in which signals outputted from a plurality of wires are divided in a multi-wire type monitor for measuring a beam profile of a charged particle beam, an identical number of the wires are grouped, the signals of the respective groups are taken out one piece by one piece to be connected with each other, and the number of the pieces, corresponding to a number of the wires belonging to the one group, are put together to be connected to a signal processor storing connection information.

Abstract: Disclosed is a beam monitor system in which signals outputted from a plurality of wires are divided in a multi-wire type monitor for measuring a beam profile of a charged particle beam, an identical number of the wires are grouped, the signals of the respective groups are taken out one piece by one piece to be connected with each other, and the number of the pieces, corresponding to a number of the wires belonging to the one group, are put together to be connected to a signal processor storing connection information.