Abstract: In order to obtain a thin plate manufacturing method capable of extremely increasing manufacturing efficiency by enlarging the production scale and remarkably reducing the manufacturing cost per unit area and an apparatus for manufacturing this thin plate, a method and an apparatus performing introduction of a substrate into a main chamber and discharge of the substrate from the main chamber through at least one subsidiary chamber (3, 4) adjacent to the main chamber (1) are employed when manufacturing a silicon thin plate by dipping a surface layer part of the substrate into a silicon melt (7) in a crucible (2) arranged in the main chamber (1) for bonding silicon (5) to the surface of the substrate.

Abstract: A particle therapy system capable of measuring energy of a charged particle beam even during irradiation of the charged particle beam is provided. A beam delivery (irradiation) system comprises a block collimator constituted by a pair of collimator members, and an energy detector mounted to one of the collimator members to be disposed on the upstream side thereof. When the pair of collimator members are moved in directions away from each other, a beam passage is formed between them. The energy detector constitutes an energy measuring device together with a signal processing unit. A part of the ion beam having reached the interior of the irradiation nozzle is irradiated to a patient through the beam passage. When a part of the remaining ion beam enters the energy detector, electric charges generate in the energy detector. The signal processing unit determines energy of the ion beam based on a position within the energy detector at which electric charges have generated in maximum amount.

Abstract: In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than the resolution limit for the exposure light.

Abstract: In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than resolution limit for the exposure light.

Abstract: In order to obtain a thin plate manufacturing method capable of extremely increasing manufacturing efficiency by enlarging the production scale and remarkably reducing the manufacturing cost per unit area and an apparatus for manufacturing this thin plate, a method and an apparatus performing introduction of a substrate into a main chamber and discharge of the substrate from the main chamber through at least one subsidiary chamber adjacent to the main chamber are employed when manufacturing a silicon thin plate by dipping a surface layer part of the substrate into a silicon melt in a crucible arranged in the main chamber for bonding silicon to the surface of the substrate.

Abstract: A particle therapy system capable of measuring energy of a charged particle beam even during irradiation of the charged particle beam is provided. A beam delivery (irradiation) system comprises a block collimator constituted by a pair of collimator members, and an energy detector mounted to one of the collimator members to be disposed on the upstream side thereof. When the pair of collimator members are moved in directions away from each other, a beam passage is formed between them. The energy detector constitutes an energy measuring device together with a signal processing unit. A part of the ion beam having reached the interior of the irradiation nozzle is irradiated to a patient through the beam passage. When a part of the remaining ion beam enters the energy detector, electric charges generate in the energy detector. The signal processing unit determines energy of the ion beam based on a position within the energy detector at which electric charges have generated in maximum amount.

Abstract: A particle therapy system capable of measuring energy of a charged particle beam even during irradiation of the charged particle beam is provided. A beam delivery (irradiation) system comprises a block collimator constituted by a pair of collimator members, and an energy detector mounted to one of the collimator members to be disposed on the upstream side thereof. When the pair of collimator members are moved in directions away from each other, a beam passage is formed between them. The energy detector constitutes an energy measuring device together with a signal processing unit. A part of the ion beam having reached the interior of the irradiation nozzle is irradiated to a patient through the beam passage. When a part of the remaining ion beam enters the energy detector, electric charges generate in the energy detector. The signal processing unit determines energy of the ion beam based on a position within the energy detector at which electric charges have generated in maximum amount.

Abstract: A fabrication method of a semiconductor integrated circuit device comprises, in an SAC process or HARC process, subjecting a semiconductor substrate to plasma etching to make contact holes in an oxide film made of a silicon oxide film formed on the semiconductor substrate. For improving the ease-in-etching property of the silicon oxide film and selectivity to a nitride film, a residence time of an etching gas within a chamber is so set as to be in a range where selectivity to an insulating film made of silicon nitride is improved by using etching conditions of a low pressure and a large flow rate of the etching gas of C5H8/O2/Ar.

Abstract: In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than the resolution limit for the exposure light.

Abstract: To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.

Abstract: To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.

Abstract: A hole is formed on an insulating film made of silicon oxide by selectively plasma-etching the insulating film with an etching gas containing C5F8, O2, and Ar firstly under a condition in which the deposition property of a polymer layer is weak and secondly under a condition in which that of the polymer layer is strong.

Abstract: To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.

Abstract: A hole is formed on an insulating film made of silicon oxide by selectively plasma-etching the insulating film with an etching gas containing C5F8, O2, and Ar firstly under a condition in which the deposition property of a polymer layer is weak and secondly under a condition in which that of the polymer layer is strong.

Abstract: An electromagnet comprises a pair of magnetic pole 1a and 1b, a return yoke 3, exciting coils 4 and 5, etc. In an interior portion of a magnetic pole, plural spacers 2a-2g are provided putting side by side in a horizontal direction. Each of the spaces 2a-2g is an air layer and a longitudinal cross-section is a substantially rectangular shape and the space has a lengthily extending slit shape in a vertical direction against a paper face in FIG. 1. The plural spaces are mainly arranged toward a right side from a beam orbit center O and an interval formed between adjacent spaces is narrower toward the right side. The electromagnet having a simple magnetic pole structure and a wide effective magnetic field area in a case where a maximum magnetic field strength is increased can be secured.

Abstract: To improve a shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.

Abstract: A fabrication method of a semiconductor integrated circuit device comprises, in an SAC process or HARC process, subjecting a semiconductor substrate to plasma etching to make contact holes in an oxide film made of a silicon oxide film formed on the semiconductor substrate. For improving the ease-in-etching property of the silicon oxide film and selectivity to a nitride film, a residence time of an etching gas within a chamber is so set as to be in a range where selectivity to an insulating film made of silicon nitride is improved by using etching conditions of a low pressure and a large flow rate of the etching gas of C5H8/O2/Ar.

Abstract: A method of irradiation with a charged particle beam and an irradiation apparatus wherein the charged particle beam supplied from an accelerator and extracted from the irradiation apparatus. The irradiation apparatus includes an electromagnet for scanning with the charged particle beam. The method includes the steps of stopping the extraction of the charged particle beam from the irradiation apparatus, changing an irradiation point of the charged particle beam by controlling the electromagnet under a condition when the extraction is stopped, and resuming the extraction of the charged particle beam from the irradiation apparatus after changing the irradiation point.

Abstract: To improve a shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.

Abstract: An electromagnet comprises a pair of magnetic pole 1a and 1b, a return yoke 3, exciting coils 4 and 5, etc. In an interior portion of a magnetic pole, plural spacers 2a-2g are provided putting side by side in a horizontal direction. Each of the spaces 2a-2g is an air layer and a longitudinal cross-section is a substantially rectangular shape and the space has a lengthily extending slit shape in a vertical direction against a paper face in FIG. 1. The plural spaces are mainly arranged toward a right side from a beam orbit center O and an interval formed between adjacent spaces is narrower toward the right side. The electromagnet having a simple magnetic pole structure and a wide effective magnetic field area in a case where a maximum magnetic field strength is increased can be secured.